Abstract: Various aspects of the technology include an integrated circuit device comprising a compound semiconductor layer and a plurality of input, switch, and ground ohmic metal fingers fabricated on the compound semiconductor layer in a repeating sequence. A control gate may be disposed between each input finger and adjacent switch finger, and a sync gate may be disposed between each ground finger and adjacent switch finger. A sync gate and a control gate may be disposed adjacent each switch finger. The device further includes a plurality of control gate pads, each control gate pad at an end of two control gates, and a control gate pad at opposite ends of each control gate, and a plurality of sync gate pads, each sync gate pad at an end of two sync gates, and a sync gate pad at opposite ends of each sync gate.

Abstract: Various aspects of the technology include an integrated circuit device comprising a compound semiconductor layer and a plurality of input, switch, and ground ohmic metal fingers fabricated on the compound semiconductor layer in a repeating sequence. A control gate may be disposed between each input finger and adjacent switch finger, and a sync gate may be disposed between each ground finger and adjacent switch finger. A sync gate and a control gate may be disposed adjacent each switch finger. The device further includes a plurality of control gate pads, each control gate pad at an end of two control gates, and a control gate pad at opposite ends of each control gate, and a plurality of sync gate pads, each sync gate pad at an end of two sync gates, and a sync gate pad at opposite ends of each sync gate.

Abstract: Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor that includes a plurality of strips disposed on a substrate, the plurality of strips comprising alternating source strips and drain strips, with adjacent strips being spaced apart from one another to form a series of channels, a gate finger segment disposed in each of the series of channels, and a plurality of gate finger pads disposed in an alternating pattern around a periphery of the plurality of strips such that each gate finger segment is associated with two gate finger pads.

Abstract: Various aspects of the technology include an integrated circuit device comprising a compound semiconductor layer and a plurality of input, switch, and ground ohmic metal fingers fabricated on the compound semiconductor layer in a repeating sequence. A control gate may be disposed between each input finger and adjacent switch finger, and a sync gate may be disposed between each ground finger and adjacent switch finger. A sync gate and a control gate may be disposed adjacent each switch finger. The device further includes a plurality of control gate pads, each control gate pad at an end of two control gates, and a control gate pad at opposite ends of each control gate, and a plurality of sync gate pads, each sync gate pad at an end of two sync gates, and a sync gate pad at opposite ends of each sync gate.

Abstract: Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor that includes a plurality of strips disposed on a substrate, the plurality of strips comprising alternating source strips and drain strips, with adjacent strips being spaced apart from one another to form a series of channels, a gate finger segment disposed in each of the series of channels, and a plurality of gate finger pads disposed in an alternating pattern around a periphery of the plurality of strips such that each gate finger segment is associated with two gate finger pads.

Abstract: Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor that includes a plurality of strips disposed on a substrate, the plurality of strips comprising alternating source strips and drain strips, with adjacent strips being spaced apart from one another to form a series of channels, a gate finger segment disposed in each of the series of channels, and a plurality of gate finger pads disposed in an alternating pattern around a periphery of the plurality of strips such that each gate finger segment is associated with two gate finger pads.

Abstract: Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor that includes a plurality of strips disposed on a substrate, the plurality of strips comprising alternating source strips and drain strips, with adjacent strips being spaced apart from one another to form a series of channels, a gate finger segment disposed in each of the series of channels, and a plurality of gate finger pads disposed in an alternating pattern around a periphery of the plurality of strips such that each gate finger segment is associated with two gate finger pads.

Abstract: Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor that includes a plurality of strips disposed on a substrate, the plurality of strips comprising alternating source strips and drain strips, with adjacent strips being spaced apart from one another to form a series of channels, a gate finger segment disposed in each of the series of channels, and a plurality of gate finger pads disposed in an alternating pattern around a periphery of the plurality of strips such that each gate finger segment is associated with two gate finger pads.

Abstract: Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor that includes a plurality of strips disposed on a substrate, the plurality of strips comprising alternating source strips and drain strips, with adjacent strips being spaced apart from one another to form a series of channels, a gate finger segment disposed in each of the series of channels, and a plurality of gate finger pads disposed in an alternating pattern around a periphery of the plurality of strips such that each gate finger segment is associated with two gate finger pads.

Abstract: Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor that includes a plurality of strips disposed on a substrate, the plurality of strips comprising alternating source strips and drain strips, with adjacent strips being spaced apart from one another to form a series of channels, a gate finger segment disposed in each of the series of channels, and a plurality of gate finger pads disposed in an alternating pattern around a periphery of the plurality of strips such that each gate finger segment is associated with two gate finger pads.

Abstract: Various aspects of the technology include a quad semiconductor power and/or switching FET comprising a pair of control/sync FET devices. Current may be distributed in parallel along source and drain fingers. Gate fingers and pads may be arranged in a serpentine configuration for applying gate signals to both ends of gate fingers. A single continuous ohmic metal finger includes both source and drain regions and functions as a source-drain node. A set of electrodes for distributing the current may be arrayed along the width of the source and/or drain fingers and oriented to cross the fingers along the length of the source and drain fingers. Current may be conducted from the electrodes to the source and drain fingers through vias disposed along the surface of the fingers. Heat developed in the source, drain, and gate fingers may be conducted through the vias to the electrodes and out of the device.

Abstract: Various aspects of the technology include an integrated circuit device comprising a compound semiconductor layer and a plurality of input, switch, and ground ohmic metal fingers fabricated on the compound semiconductor layer in a repeating sequence. A control gate may be disposed between each input finger and adjacent switch finger, and a sync gate may be disposed between each ground finger and adjacent switch finger. A sync gate and a control gate may be disposed adjacent each switch finger. The device further includes a plurality of control gate pads, each control gate pad at an end of two control gates, and a control gate pad at opposite ends of each control gate, and a plurality of sync gate pads, each sync gate pad at an end of two sync gates, and a sync gate pad at opposite ends of each sync gate.

Abstract: Various aspects of the technology provide a dual semiconductor power and/or switching FET device to replace two or more discrete FET devices. Portions of the current may be distributed in parallel to sections of the source and drain fingers to maintain a low current density and reduce the size while increasing the overall current handling capabilities of the dual FET. Application of the gate signal to both ends of gate fingers, for example, using a serpentine arrangement of the gate fingers and gate pads, simplifies layout of the dual FET device. A single integral ohmic metal finger including both source functions and drain functions reduces conductors and contacts for connecting the two devices at a source-drain node. Heat developed in the source, drain, and gate fingers may be conducted through the vias to the electrodes and out of the device.

Abstract: Various aspects of the technology includes a quad semiconductor power and/or switching FET comprising a pair of control/sync FET devices. Current may be distributed in parallel along source and drain fingers. Gate fingers and pads may be arranged in a serpentine configuration for applying gate signals to both ends of gate fingers. A single continuous ohmic metal finger includes both source and drain regions and functions as a source-drain node. A set of electrodes for distributing the current may be arrayed along the width of the source and/or drain fingers and oriented to cross the fingers along the length of the source and drain fingers. Current may be conducted from the electrodes to the source and drain fingers through vias disposed along the surface of the fingers. Heat developed in the source, drain, and gate fingers may be conducted through the vias to the electrodes and out of the device.

Abstract: Various aspects of the technology provide for a converter circuit such as a dc-dc voltage converter or buck converter. The circuit includes a enhancement mode control Field Effect Transistor (FET) fabricated using gallium arsenide and an depletion mode sync FET fabricated using gallium arsenide. A drain of the sync FET may be coupled to a source of the control FET and an inductor may be coupled to the source of the control FET and the drain of the sync FET.

Abstract: Circuits and systems comprising one or more switches are provided. A circuit includes a first switch formed on a substrate; and a second switch formed on the substrate, the second switch including a first terminal coupled to a third terminal of the first switch. A system includes a supply; a first switch formed on a substrate, the first switch coupled to the supply; a second switch formed on the substrate, the second switch coupled to the first switch; a third switch formed on the substrate, the third switch coupled to the supply; a fourth switch formed on the substrate, the fourth switch coupled to the third switch; and a driver coupled to respective second terminals of the first, second, third, and fourth switches.

Abstract: Various aspects of the technology provide for clamping a transient from a transient generator in a circuit using a Field Effect Transistor (FET) including a compound semiconductor layer forming a drain coupled to the transient voltage generator, a source, and a gate. The gate and the drain may be configured to clamp voltage transients in the circuit from the transient voltage generator independent of a clamping diode between the source and the drain. The FET may be a depletion mode type fabricated using germanium or a compound semiconductor such as gallium arsenide (GaAs) or gallium nitride (GaN).

Abstract: Various aspects of the technology provide a dual semiconductor power and/or switching FET device to replace two or more discrete FET devices. Portions of the current may be distributed in parallel to sections of the source and drain fingers to maintain a low current density and reduce the size while increasing the overall current handling capabilities of the dual FET. Application of the gate signal to both ends of gate fingers, for example, using a serpentine arrangement of the gate fingers and gate pads, simplifies layout of the dual FET device. A single integral ohmic metal finger including both source functions and drain functions reduces conductors and contacts for connecting the two devices at a source-drain node. Heat developed in the source, drain, and gate fingers may be conducted through the vias to the electrodes and out of the device.

Abstract: Circuits and systems comprising one or more switches are provided. A circuit includes a first switch formed on a substrate; and a second switch formed on the substrate, the second switch including a first terminal coupled to a third terminal of the first switch. A system includes a supply; a first switch formed on a substrate, the first switch coupled to the supply; a second switch formed on the substrate, the second switch coupled to the first switch; a third switch formed on the substrate, the third switch coupled to the supply; a fourth switch formed on the substrate, the fourth switch coupled to the third switch; and a driver coupled to respective second terminals of the first, second, third, and fourth switches.

Abstract: Aspects provide for reducing the size and cost of a compound semiconductor power FET device while increasing yield and maintaining current handling capabilities of the FET by distributing portions of the current in parallel to sections the source and drain fingers to maintain a low current density, and applying the gate signal to both ends of the gate fingers to increase yield. The current to be handled by the FET may be divided among a set of electrodes arrayed along the width of the source or drain fingers and oriented to cross the fingers along the length of the source and drain fingers. The current may be conducted from the electrodes to the source and drain fingers through vias disposed along the surface of the fingers. Heat developed in the source, drain, and gate fingers may be conducted through the vias to the electrodes and out of the device.