Abstract: A method including forming a non-planar conducting channel of a device between junction regions on a substrate, the substrate including a blocking material beneath the channel, the blocking material including a property to inhibit carrier leakage; and forming a gate stack on the channel, the gate stack including a dielectric material and a gate electrode. A method including forming a buffer material on a semiconductor substrate, the buffer material including a semiconductor material including a different lattice structure than the substrate; forming a blocking material on the buffer material, the blocking material including a property to inhibit carrier leakage; and forming a transistor device on the substrate. An apparatus including a non-planar multi-gate device on a substrate including a transistor device including a channel disposed on a substrate including a blocking material beneath the channel, the blocking material including a property to inhibit carrier leakage.

Abstract: Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (1) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.

Abstract: A method including forming a non-planar conducting channel of a device between junction regions on a substrate, the substrate including a blocking material beneath the channel, the blocking material including a property to inhibit carrier leakage; and forming a gate stack on the channel, the gate stack including a dielectric material and a gate electrode. A method including forming a buffer material on a semiconductor substrate, the buffer material including a semiconductor material including a different lattice structure than the substrate; forming a blocking material on the buffer material, the blocking material including a property to inhibit carrier leakage; and forming a transistor device on the substrate. An apparatus including a non-planar multi-gate device on a substrate including a transistor device including a channel disposed on a substrate including a blocking material beneath the channel, the blocking material including a property to inhibit carrier leakage.

Abstract: Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (1) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.

Abstract: Methods of forming hetero-layers with reduced surface roughness and bulk defect density on non-native surfaces and the devices formed thereby are described. In one embodiment, the method includes providing a substrate having a top surface with a lattice constant and depositing a first layer on the top surface of the substrate. The first layer has a top surface with a lattice constant that is different from the first lattice constant of the top surface of the substrate. The first layer is annealed and polished to form a polished surface. A second layer is then deposited above the polished surface.

Abstract: Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (1) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.

Abstract: Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (I) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.

Abstract: Methods of forming hetero-layers with reduced surface roughness and bulk defect density on non-native surfaces and the devices formed thereby are described. In one embodiment, the method includes providing a substrate having a top surface with a lattice constant and depositing a first layer on the top surface of the substrate. The first layer has a top surface with a lattice constant that is different from the first lattice constant of the top surface of the substrate. The first layer is annealed and polished to form a polished surface. A second layer is then deposited above the polished surface.

Abstract: A hand carried firearm that for safety purposes, has no trigger on the firearm. A shooter has to steady his aim by controlling his breathing, and taking care to squeeze not jerk the trigger in order to hit his target. A remote trigger allows a shooter to steady only his gun hand, because motion at the remote trigger doesn't affect aim.

Abstract: A method of loading individual caseless cartridges sequentially into a firearm firing chamber by the expansive force of a small detonation in the magazine focused locally on the current top cartridge in a magazine without damaging remaining cartridges. Small individual propelling charges containing an igniter microchip located in the magazine behind each cartridge provides the loading thrust. More energetic charges containing igniter microchips are imbedded in the cartridges to fire the cartridge in the firing chamber at will.

Abstract: A remotely operated underwater dredging system that can excavate many hundreds of feet below the surface of a water body. By placing dredge pump at the bottom of the water body, the vacuum to lift water and dredged material to the pump is minimized. In addition, the mechanical advantage of the cutterhead can be greatly enhanced by mounting it directly to a submerged dredging chassis close to the pump.

Abstract: A method of loading individual caseless cartridges sequentially into a firearm firing chamber by the expansive force of a small detonation in the magazine focused locally on the current top cartridge in a magazine without damaging remaining cartridges. Small individual propelling charges containing an igniter microchip located in the magazine behind each cartridge provides the loading thrust. More energetic charges containing igniter microchips are imbedded in the cartridges to fire the cartridge in the firing chamber at will.

Abstract: A method for spans launched, as self-supporting bridge beams, approximately horizontally from support structure to successive support structure without significant temporary false work or scaffolding between permanent support structures. Bridge spans assembled atop previously constructed roadbed are launched individually onto supporting structures or columns spaced at span widths beyond said roadbed. 3 individual spans are placed or assembled with a longitudinal girder into a unit atop the roadbed surface, the assembly becoming a launching truss. Load moving air cushion pallets are placed upon the roadbed beneath and before the 3 spans. The launching truss moves forward one span length beyond the roadbed end placing one span and assembled girder in cantilever. That span is disconnected from the truss and emplaced upon supporting structures, at eventual roadbed level, beyond the previously constructed roadbed. Repeated, the process completes the bridge.

Abstract: A method for spans launched, as self-supporting bridge beams, approximately horizontally from support structure to successive support structure without significant temporary false work or scaffolding between permanent support structures. Bridge spans assembled atop previously constructed roadbed are launched individually onto supporting structures or columns spaced at span widths beyond said roadbed. 3 individual spans are placed or assembled with a longitudinal girder into a unit atop the roadbed surface, the assembly becoming a launching truss. Load moving air cushion pallets are placed upon the roadbed beneath and before the 3 spans. The launching truss moves forward one span length beyond the roadbed end placing one span and assembled girder in cantilever. That span is disconnected from the truss and emplaced upon supporting structures, at eventual roadbed level, beyond the previously constructed roadbed. Repeated, the process completes the bridge.

Abstract: A method of rebuilding a viaduct without interrupting service on the old structure by over topping it with a new, higher viaduct well above existing traffic, includes the following: Erecting new span supporting columns arrayed along either side of the old viaduct. New columns are temporarily connected to old viaduct to strengthen it for a temporary scaffold role transporting heavy subassemblies into position atop the new columns. The subassemblies or their components would typically arrive at a staging area alongside the old viaduct for preparation and hoisting the subassemblies onto a high dolly atop the old viaduct. The subassemblies are assembled into spans on the high dolly atop the old viaduct roadbed surface to transport and position the spans sequentially onto respective columns beginning with columns at extreme ends of the old viaduct and successively hoisting and transporting more subassemblies until a new higher viaduct roadbed is assembled well over the still functioning old viaduct.

Abstract: Exposure systems may use pellicles made of perfluoropoly-ether. These materials may exhibit reduced darkening upon repeated exposures compared to other materials.

Abstract: A bridge for long, deep water crossings is supported between spans by narrow, transverse, semi-submersible pontoons. The pontoons are oriented to present minimal cross section to tidal currents under the bridge. The pontoons are pivotally attached to the bridge allowing them to be turned a few degrees right or left as tidal currents change. During fabrication, a module of bridge deck/roadway can be assembled for transport upon each pontoon deck. After remote fabrication two or more complete bridge modules can be linked pontoon-to-pontoon into a seaworthy vessel that can be towed to the erection site. At site the roadway modules are rotated transverse to the pontoon, elevated to final position and joined to other modules, completing the bridge.

Abstract: Pellicles separated by a distance sufficient to allow a purge gas help repair damage to at least one of the pellicles caused by exposure to an incident radiation and allowing at least a minimum amount of radiation to reach a semiconductor wafer sufficient to perform a desired photolythography process. Moreover, the two pellicles separated by a sufficient distance such that a dispersed purge gas dispersed between the pellicles will not absorb more than an amount of energy from the incident radiation so as to prevent a desired amount of the radiation to reach a semiconductor wafer located a certain distance away from the pellicles.

Abstract: Site cast or pre-cast columns aligned and braced by pre-cast pre-stressed floor beams are used to erect a concrete skeleton structure for a building. The ends of the horizontal beams are imbedded in the columns at floor levels to stabilize and complete the skeleton. The horizontal beams are pre-stressed and are cast with passages that permit insertion of continuous reinforcing tendons into a network throughout each floor level. The tendons are subsequently post-tensioned so to tie the beams together and to the columns to reinforce the skeleton. Slab drop-forms starting at the roof and progressing floor-by-floor downward allow monolithic post-tensioned floor slabs to be cast to tie the skeleton into a unitary structure. The beams are usually integrated (buried) into each monolithic floor slab, keyed, doweled and bonded with bonding agent at cold joints to become a part of the slab structure.

Abstract: Pellicles separated by a distance sufficient to allow a purge gas help repair damage to at least one of the pellicles caused by exposure to an incident radiation and allowing at least a minimum amount of radiation to reach a semiconductor wafer sufficient to perform a desired photolythography process. Moreover, the two pellicles separated by a sufficient distance such that a dispersed purge gas dispersed between the pellicles will not absorb more than an amount of energy from the incident radiation so as to prevent a desired amount of the radiation to reach a semiconductor wafer located a certain distance away from the pellicles.