Abstract: The present disclosure arises at least in part from the seminal recognition that a combination treatment regimen including one or more cycles and/or doses of a checkpoint inhibitor and a therapeutic, either sequentially, in either order, or substantially simultaneously, can be more effective in treating cancer in some subjects and/or can initiate, enable, increase, enhance or prolong the activity and/or number of immune cells, or a medically beneficial response by a tumor.

Abstract: A combination treatment regimen including one or more cycles and/or doses of a checkpoint inhibitor and a therapeutic, either sequentially, in either order, or substantially simultaneously, can be more effective in treating cancer in some subjects and/or can initiate, enable, increase, enhance or prolong the activity and/or number of immune cells, the efficacy of anti-tumor immune responses or a medically beneficial response by a tumor.

Abstract: A conferencing system for providing remote assistance according to the present disclosure includes a service requester device configured to execute a service requester application, a service provider device configured to execute a service provider application and a server application executing on a computer server remotely located from the service requester and service provider devices, the service requester and service provider applications are configured to dynamically connect to each other through the at least one server application.

Abstract: A conferencing system for providing remote assistance according to the present disclosure includes a service requester device configured to execute a service requester application, a service provider device configured to execute a service provider application and a server application executing on a computer server remotely located from the service requester and service provider devices, the service requester and service provider applications are configured to dynamically connect to each other through the at least one server application.

Abstract: A conferencing system for providing remote assistance according to the present disclosure includes a service requester device configured to execute a service requester application, a service provider device configured to execute a service provider application and a server application executing on a computer server remotely located from the service requester and service provider devices, the service requester and service provider applications are configured to dynamically connect to each other through the at least one server application.

Abstract: A method including forming a non-planar conducting channel of a device between junction regions on a substrate, the substrate including a blocking material beneath the channel, the blocking material including a property to inhibit carrier leakage; and forming a gate stack on the channel, the gate stack including a dielectric material and a gate electrode. A method including forming a buffer material on a semiconductor substrate, the buffer material including a semiconductor material including a different lattice structure than the substrate; forming a blocking material on the buffer material, the blocking material including a property to inhibit carrier leakage; and forming a transistor device on the substrate. An apparatus including a non-planar multi-gate device on a substrate including a transistor device including a channel disposed on a substrate including a blocking material beneath the channel, the blocking material including a property to inhibit carrier leakage.

Abstract: Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (1) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.

Abstract: A system for controlling a display of image data is presented including a first imaging unit for capturing a first set of images and a second imaging unit for capturing a second set of images. The system also includes a display unit configured to display the image data in a picture-in-picture mode, such that the display unit displays the first set of images in a first panel having a first size and the second set of images in a second panel having a second size, where the first size is greater than the second size.

Abstract: A conferencing system for providing remote assistance according to the present disclosure includes a service requester device configured to execute a service requester application, a service provider device configured to execute a service provider application and a server application executing on a computer server remotely located from the service requester and service provider devices, the service requester and service provider applications are configured to dynamically connect to each other through the at least one server application.

Abstract: A method including forming a non-planar conducting channel of a device between junction regions on a substrate, the substrate including a blocking material beneath the channel, the blocking material including a property to inhibit carrier leakage; and forming a gate stack on the channel, the gate stack including a dielectric material and a gate electrode. A method including forming a buffer material on a semiconductor substrate, the buffer material including a semiconductor material including a different lattice structure than the substrate; forming a blocking material on the buffer material, the blocking material including a property to inhibit carrier leakage; and forming a transistor device on the substrate. An apparatus including a non-planar multi-gate device on a substrate including a transistor device including a channel disposed on a substrate including a blocking material beneath the channel, the blocking material including a property to inhibit carrier leakage.

Abstract: A conferencing system for providing remote assistance according to the present disclosure includes a service requester device configured to execute a service requester application, a service provider device configured to execute a service provider application and a server application executing on a computer server remotely located from the service requester and service provider devices, the service requester and service provider applications are configured to dynamically connect to each other through the at least one server application.

Abstract: An endoluminal crawler used in endoscopic procedures includes a body and an actuation unit. The body includes a tubular portion. The actuation unit includes an actuator providing a rotational output and a traction belt. The traction belt includes a traction portion and an engaging portion. The traction portion protrudes out of a slot defined in the tubular portion and the engaging portion operatively engages the actuator.

Abstract: Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (1) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.

Abstract: Methods of forming hetero-layers with reduced surface roughness and bulk defect density on non-native surfaces and the devices formed thereby are described. In one embodiment, the method includes providing a substrate having a top surface with a lattice constant and depositing a first layer on the top surface of the substrate. The first layer has a top surface with a lattice constant that is different from the first lattice constant of the top surface of the substrate. The first layer is annealed and polished to form a polished surface. A second layer is then deposited above the polished surface.

Abstract: Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (1) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.

Abstract: A conferencing system for providing remote assistance according to the present disclosure includes a service requester device configured to execute a service requester application, a service provider device configured to execute a service provider application and a server application executing on a computer server remotely located from the service requester and service provider devices, the service requester and service provider applications are configured to dynamically connect to each other through the at least one server application.

Abstract: A conferencing system for providing remote assistance according to the present disclosure includes a service requester device configured to execute a service requester application, a service provider device configured to execute a service provider application and a server application executing on a computer server remotely located from the service requester and service provider devices, the service requester and service provider applications are configured to dynamically connect to each other through the at least one server application.

Abstract: A system for controlling a display of image data is presented including a first imaging unit for capturing a first set of images and a second imaging unit for capturing a second set of images. The system also includes a display unit configured to display the image data in a picture-in-picture mode, such that the display unit displays the first set of images in a first panel having a first size and the second set of images in a second panel having a second size, where the first size is greater than the second size.

Abstract: An endoluminal crawler used in endoscopic procedures includes a body and an actuation unit. The body includes a tubular portion. The actuation unit includes an actuator providing a rotational output and a traction belt. The traction belt includes a traction portion and an engaging portion. The traction portion protrudes out of a slot defined in the tubular portion and the engaging portion operatively engages the actuator.

Abstract: Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (I) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.