Abstract: An acoustic damper has a sound pickup unit defining a plurality of pickup unit passageways. Hollow flexible tubes are connected to exit openings of the pickup unit passageways and extend outwardly therefrom. The hollow flexible tubes and pickup unit passageways define acoustic paths.

Abstract: An inflation system for tubeless bicycle tires may include a valve, a sealant canister, a pump head, and/or a valve core adapter. The valve, sealant canister, and pump head may collectively facilitate sealant injection into a tire by a user. The valve has an external valve seat, and includes a valve body, a valve stem extending through the length of the valve body, and a retaining mechanism for the valve stem disposed interior to the valve body. The valve stem is configured to move relative to the valve body, such that a resilient seating surface disposed at a proximal end of the valve stem is displaced relative to a valve seat formed by an exterior surface of a proximal end of the valve body.

Abstract: An inflation system for tubeless bicycle tires may include a valve, a sealant canister, a pump head, and/or a valve core adapter. The valve, sealant canister, and pump head may collectively facilitate sealant injection into a tire by a user. The valve has an external valve seat, and includes a valve body, a valve stem extending through the length of the valve body, and a retaining mechanism for the valve stem disposed interior to the valve body. The valve stem is configured to move relative to the valve body, such that a resilient seating surface disposed at a proximal end of the valve stem is displaced relative to a valve seat formed by an exterior surface of a proximal end of the valve body.

Abstract: A disclosed example to modulate slit stress in a semiconductor substrate includes a first controller to, after obtaining a wafer stress measurement of the semiconductor substrate, control a first process to apply a first material to the semiconductor substrate based on the wafer stress measurement, the semiconductor substrate including a slit between adjacent stacked transistor layers, the first material coating walls of the slit to reduce a first width of the slit between the adjacent stacked transistor layers to a second width; and a second controller to control a second process to apply a second material to the semiconductor substrate, the second material to be deposited in the second width of the slit, the first material and the second material to form a solid structure in the slit between the adjacent stacked transistor layers.

Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.

Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.

Abstract: An automatic injector dispenses a predetermined dose of medicament without a user having to manually force the needle into an injection site. The automatic injector includes a needle cover having a locked retracted position with respect to the injector housing prior to a medicament dispensing operation. The needle cover is operative to engage an injection site prior to a medicament dispensing operation.

Abstract: In one embodiment, an apparatus comprises a tier comprising alternating first and second layers, wherein the first layers comprise a first conductive material and the second layers comprise a first dielectric material; a lower metal layer below the tier; a bond pad above the tier, the bond pad coupled to the lower metal layer by a via extending through the tier; and a first channel formed through a portion of the tier, the first channel surrounding the via, the first channel comprising a second dielectric material.

Abstract: A patient monitoring system for monitoring a patient undergoing radiotherapy comprising a projector operable to project a pattern of light onto a patient undergoing radiation treatment, a patient restraint operable to restrain the patient relative to a treatment apparatus, an image detector operable to obtain images of the patient, and a model generation module operable to process images of the patient obtained by the image detector to generate a model of the surface of a portion of the patient, wherein at least a portion of the patient restraint is colored and the model generation module is inhibited from generating a model of the colored portion of the patient restraint.

Abstract: Methods for identifying a subject with a cancer eligible for treatment with an inhibitor of a Table 1 molecule, optionally a SRC kinase inhibitor or a MET kinase inhibitor, are provided. The methods comprise testing a biological sample from the subject for a deficiency in EPHB6 receptor levels, wherein the subject is eligible for treatment with an inhibitor of a Table 1 molecule, optionally a SRC kinase inhibitor or a MET kinase inhibitor, if EPHB6 receptor levels in the biological sample are deficient.

Abstract: Convergence times associated with simulated annealing based (SA-based) optimization in wireless networks can be reduced by introducing an additional local or cell-level evaluation step into the evaluation of global solutions. In particular, new local solutions may be evaluated based on local performance criteria when the new solutions are in a global solution deemed to have satisfied a global performance criteria. New local solutions that satisfy their corresponding local performance criteria remain in the new global solution. New local solutions that do not satisfy their corresponding local performance criteria are replaced with a corresponding current local solution from a current global solution, thereby modifying the new global solution. The resulting modified global solution includes both new local solutions and current local solutions prior to being accepted as the current global solution for the next iteration.

Abstract: In one embodiment, an apparatus comprises a tier comprising alternating first and second layers, wherein the first layers comprise a first conductive material and the second layers comprise a first dielectric material; a lower metal layer below the tier; a bond pad above the tier, the bond pad coupled to the lower metal layer by a via extending through the tier; and a first channel formed through a portion of the tier, the first channel surrounding the via, the first channel comprising a second dielectric material.

Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.

Abstract: Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.

Abstract: A disclosed example to modulate slit stress in a semiconductor substrate includes a first controller to, after obtaining a wafer stress measurement of the semiconductor substrate, control a first process to apply a first material to the semiconductor substrate based on the wafer stress measurement, the semiconductor substrate including a slit between adjacent stacked transistor layers, the first material coating walls of the slit to reduce a first width of the slit between the adjacent stacked transistor layers to a second width; and a second controller to control a second process to apply a second material to the semiconductor substrate, the second material to be deposited in the second width of the slit, the first material and the second material to form a solid structure in the slit between the adjacent stacked transistor layers.

Abstract: An apparatus and system for injecting fluid into a boundary layer of a flow of fluid are provided. The boundary layer injection insert assembly includes an insert body and a central bore extending through the insert body from an inlet opening positioned at a first end to an outlet opening positioned at a second end of the insert body opposite the first end. The insert body is approximately cylindrical about a longitudinal axis and includes a thickness in a radial direction orthogonal to the longitudinal axis. The first end includes a plurality of injection holes extending through the thickness for a first distance, the first distance being less than the length. The boundary layer injection insert assembly also includes an annular spacer at least partially surrounding the second end and including a radially inner surface and a radially outer surface spaced apart by a thickness of the annular spacer.

Abstract: A disclosed example to modulate slit stress in a semiconductor substrate includes controlling a first process to apply a first material to a semiconductor substrate. The semiconductor substrate includes a slit between adjacent stacked transistor layers. The first material coats walls of the slit to reduce a first width of the slit between the adjacent stacked transistor layers to a second width. A second process is controlled to apply a second material to the semiconductor substrate. The second material is to be deposited in the second width of the slit. The first material and the second material are to form a solid structure in the slit between the adjacent stacked transistor layers.

Abstract: A light fixture includes a housing with a skylight aperture, and one or more louver blades spanning the skylight aperture. When open, the one or more movable louver blades block little of the light passing through the skylight aperture; in intermediate positions, the louver blades block a portion of the light; when closed, the louver blades block most light from passing through the skylight aperture. The light fixture also includes: a dimmable artificial light source configured to project artificial light toward the illuminated space; a light sensor that detects light illuminating the space; and a control unit that is integrated with the housing and communicates with the light sensor. The light sensor detects intensity and chromaticity information of the light illuminating the space. The control unit controls position of the louver blades and brightness and chromaticity of the dimmable artificial light source, in response to the light sensor.

Abstract: A registration authority (RA) server registers unmanned aerial vehicles (UAVs) and their owners/operators (O/O). A UAV is maintained in a flight lock state until a flight plan request from the O/O is approved by the RA, which sends an key-signed approval to unlock the UAV's flight lock. The RA server evaluates a UAV's proposed flight plan based on the attributes of the O/O and UAV, the location and time of the requested flight plan, and a set of flight rules and exclusion zones that are developed in view of privacy assurance, security assurance, flight safety assurance, and ground safety assurance. The flight plan key-signed approval supplied to the UAV by the RA server specifies an inclusion zone that corresponds to a flight plan trajectory to be followed. Once in flight, the UAV maintains real-time knowledge of its position and time to ensure its flight remains within the approved inclusion zone.

Abstract: A patient monitoring system for monitoring a patient undergoing radiotherapy comprising a projector operable to project a pattern of light onto a patient undergoing radiation treatment, a patient restraint operable to restrain the patient relative to a treatment apparatus, an image detector operable to obtain images of the patient, and a model generation module operable to process images of the patient obtained by the image detector to generate a model of the surface of a portion of the patient, wherein at least a portion of the patient restraint is colored and the model generation module is inhibited from generating a model of the colored portion of the patient restraint.