Patents by Inventor James Neil Johnson
James Neil Johnson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240140951Abstract: A series of substituted imidazo[1,2-b]pyridazine derivatives as defined herein, being potent modulators of human IL-17 activity, are accordingly of benefit in the treatment and/or prevention of various human ailments, including inflammatory and autoimmune disorders.Type: ApplicationFiled: December 6, 2021Publication date: May 2, 2024Inventors: Gareth Neil Brace, Shuyu Chu, Anne Marie Foley, James Andrew Johnson, Timothy John Norman, Joanna Rachel Quincey, James Thomas Reuberson, Robert Straker, Robert James Townsend
-
Patent number: 9608144Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a window layer and an absorber layer disposed on the window layer, wherein the absorber layer includes a first region and a second region, the first region disposed adjacent to the window layer. The absorber layer further includes a first additive and a second additive, wherein a concentration of the first additive in the first region is greater than a concentration of the first additive in the second region, and wherein a concentration of the second additive in the second region is greater than a concentration of the second additive in the first region. Method of making a photovoltaic device is also provided.Type: GrantFiled: June 1, 2011Date of Patent: March 28, 2017Assignee: First Solar, Inc.Inventors: James Neil Johnson, Bastiaan Arie Korevaar, Timothy John Sommerer
-
Patent number: 9447489Abstract: One aspect of the present invention includes method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer, wherein the absorber layer includes a first region and a second region. The method includes disposing the first region adjacent to the window layer in a first environment including oxygen at a first partial pressure; and disposing the second region on the first region in a second environment including oxygen at a second partial pressure, wherein the first partial pressure is greater than the second partial pressure. One aspect of the present invention includes a photovoltaic device.Type: GrantFiled: June 21, 2011Date of Patent: September 20, 2016Assignee: First Solar, Inc.Inventors: James Neil Johnson, Bastiaan Arie Korevaar, Yu Zhao
-
Patent number: 9324898Abstract: A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.Type: GrantFiled: September 25, 2013Date of Patent: April 26, 2016Assignee: Alliance For Sustainable Energy, LLCInventors: David S. Albin, James Neil Johnson, Yu Zhao, Bastiaan Arie Korevaar
-
Publication number: 20160021788Abstract: An electronic device assembly includes a heat sink coupled to an electronic device to dissipate the heat produced by the electronic device. A heat spreader is coupled between the electronic device and the heat sink to transfer heat from the electronic device to the heat sink. Furthermore, at least one of the electronic device, the heat spreader, and the heat sink is disposed with a disordered carbon coating.Type: ApplicationFiled: April 1, 2015Publication date: January 21, 2016Inventors: Shakti Singh Chauhan, James Neil Johnson, Brian Patrick Hoden, Graham Charles Kirk
-
Patent number: 8962978Abstract: A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described.Type: GrantFiled: December 3, 2010Date of Patent: February 24, 2015Assignee: General Electric CompanyInventors: Bastiaan Arie Korevaar, James Neil Johnson, Todd Ryan Tolliver, Theodore Carlton Kreutz, Xiaolan Zhang
-
Patent number: 8912037Abstract: A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.Type: GrantFiled: July 28, 2011Date of Patent: December 16, 2014Assignees: First Solar, Inc., Alliance for Sustainable Energy, LLCInventors: James Neil Johnson, David Scott Albin, Scott Feldman-Peabody, Mark Jeffrey Pavol, Robert Dwayne Gossman
-
Publication number: 20140083505Abstract: A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.Type: ApplicationFiled: September 25, 2013Publication date: March 27, 2014Applicants: First Solar, Inc., Alliance for Sustainable Energy, LLCInventors: David S. ALBIN, James Neil JOHNSON, Yu ZHAO, Bastiaan Arie KOREVAAR
-
Publication number: 20130233374Abstract: A monolithically integrated cadmium telluride (CdTe) photovoltaic (PV) module includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer and a CdTe absorber layer. The back contact metal layer is disposed between the insulating layer and the CdTe absorber layer. The PV module further includes a window layer and a second electrically conductive layer. The window layer is disposed between the CdTe absorber layer and the second electrically conductive layer. At least one first trench extends through the back contact metal layer, at least one second trench extends through the absorber and window layers, and at least one third trench extends through the second electrically conductive layer. A method for monolithically integrating CdTe PV cells is also provided.Type: ApplicationFiled: April 19, 2013Publication date: September 12, 2013Applicant: GENERAL ELECTRIC COMPANYInventors: Bastiaan Arie Korevaar, James Neil Johnson, Holly Ann Blaydes, James Edward Pickett, Thomas Miebach
-
Publication number: 20130160810Abstract: A photovoltaic device having n-i-p or p-i-n configuration is presented. The device includes a first semiconductor layer, a second semiconductor layer and an intrinsic layer interposed between the first semiconductor layer and the second semiconductor layer. The intrinsic layer includes cadmium, tellurium and oxygen. Method of making a photovoltaic device is also provided.Type: ApplicationFiled: December 22, 2011Publication date: June 27, 2013Applicant: GENERAL ELECTRIC COMPANYInventors: Bastiaan Arie Korevaar, James Neil Johnson, Oleg Sulima
-
Publication number: 20130029454Abstract: A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.Type: ApplicationFiled: July 28, 2011Publication date: January 31, 2013Applicant: GENERAL ELECTRIC COMPANYInventors: James Neil Johnson, David Scott Albin, Scott Feldman-Peabody, Mark Jeffrey Pavol, Robert Dwayne Gossman
-
Patent number: 8349084Abstract: An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.Type: GrantFiled: April 5, 2011Date of Patent: January 8, 2013Assignee: General Electric CompanyInventors: James Neil Johnson, Bastiaan Arie Korevaar, Yu Zhao
-
Publication number: 20120325298Abstract: One aspect of the present invention includes method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer, wherein the absorber layer includes a first region and a second region. The method includes disposing the first region adjacent to the window layer in a first environment including oxygen at a first partial pressure; and disposing the second region on the first region in a second environment including oxygen at a second partial pressure, wherein the first partial pressure is greater than the second partial pressure. One aspect of the present invention includes a photovoltaic device.Type: ApplicationFiled: June 21, 2011Publication date: December 27, 2012Applicant: GENERAL ELECTRIC COMPANYInventors: James Neil Johnson, Bastiaan Arie Korevaar, Yu Zhao
-
Publication number: 20120305064Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a window layer and an absorber layer disposed on the window layer, wherein the absorber layer includes a first region and a second region, the first region disposed adjacent to the window layer. The absorber layer further includes a first additive and a second additive, wherein a concentration of the first additive in the first region is greater than a concentration of the first additive in the second region, and wherein a concentration of the second additive in the second region is greater than a concentration of the second additive in the first region. Method of making a photovoltaic device is also provided.Type: ApplicationFiled: June 1, 2011Publication date: December 6, 2012Applicant: GENERAL ELECTRIC COMPANYInventors: James Neil Johnson, Bastiaan Arie Korevaar, Timothy John Sommerer
-
Publication number: 20120103261Abstract: An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.Type: ApplicationFiled: April 5, 2011Publication date: May 3, 2012Applicant: GENERAL ELECTRIC COMPANYInventors: James Neil Johnson, Bastiaan Arie Korevaar, Yu Zhao
-
Publication number: 20120052617Abstract: An apparatus and related process are provided for vapor deposition of a sublimated source material as a doped thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material supplied from a first feed tube. A second feed tube can provide a dopant material into the deposition head. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus to further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.Type: ApplicationFiled: December 20, 2010Publication date: March 1, 2012Applicant: General Electric CompanyInventors: James Neil Johnson, Yu Zhao, Scott Daniel Feldman-Peabody
-
Patent number: 7939363Abstract: A process for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer is provided. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer. An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is also provided.Type: GrantFiled: October 27, 2010Date of Patent: May 10, 2011Assignee: General Electric CompanyInventors: James Neil Johnson, Bastiaan Arie Korevaar, Yu Zhao
-
Publication number: 20110104398Abstract: A system for depositing two or more materials on a substrate is provided. The system comprises one or more susceptors configured to define two or more recesses for accommodating at least a first material and a second material respectively. The first and second materials are different. The system further comprises one or more heaters for heating the first material and the second material for sublimation of the first and second materials for deposition on the substrate. A method for depositing two or more materials on a substrate is also presented.Type: ApplicationFiled: October 29, 2009Publication date: May 5, 2011Applicant: GENERAL ELECTRIC COMPANYInventors: Bastiaan Arie Korevaar, Faisal Razi Ahmad, John Anthony DeLuca, James Neil Johnson, John Patrick Lemmon, Yangang Andrew Xi
-
Publication number: 20110100447Abstract: A photovoltaic device is provided. The photovoltaic device comprises an absorber layer comprising a p-type semiconductor, wherein at least one layer is disposed over the absorber layer. The at least one layer is a semiconductor having a higher carrier density than the carrier density of the absorber layer. The at least one layer comprises silicon. The at least one layer comprises a p+-type semiconductor. The absorber layer is substantially free of silicon. A method of forming the photovoltaic device is provided.Type: ApplicationFiled: November 4, 2009Publication date: May 5, 2011Applicant: GENERAL ELECTRIC COMPANYInventors: Bastiaan Arie Korevaar, Yangang Andrew Xi, Faisal Razi Ahmad, James Neil Johnson
-
Publication number: 20110067753Abstract: A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described.Type: ApplicationFiled: December 3, 2010Publication date: March 24, 2011Applicant: GENERAL ELECTRIC COMPANYInventors: Bastiaan Arie Korevaar, James Neil Johnson, Todd Ryan Tolliver, Theodore Carlton Kreutz, Xiaolan Zhang