Abstract: A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described.

Abstract: Methods of making multi-layered, hydrogen-containing thermite structures including at least one metal layer and at least one metal oxide layer adjacent to the metal layer are disclosed. At least one of the metal layers contains hydrogen, which can be introduced by plasma hydrogenation. The thermite structures can have high hydrogen contents and small dimensions, such as micrometer-sized and nanometer-sized dimensions.

Abstract: A photovoltaic device is provided comprising an absorber layer, wherein the absorber layer comprises a plurality of grains separated by grain boundaries. At least one layer is disposed over the absorber layer. The absorber layer comprises grain boundaries that are substantially perpendicular to the at least one layer disposed over the absorber layer. The plurality of grains has a median grain diameter of less than 1 micrometer. Further, the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains and grain boundaries may be of the same type or opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the absorber layer is also disclosed.

Abstract: A monolithically integrated cadmium telluride (CdTe) photovoltaic (PV) module includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer and a CdTe absorber layer. The back contact metal layer is disposed between the insulating layer and the CdTe absorber layer. The PV module further includes a window layer and a second electrically conductive layer. The window layer is disposed between the CdTe absorber layer and the second electrically conductive layer. At least one first trench extends through the back contact metal layer, at least one second trench extends through the absorber and window layers, and at least one third trench extends through the second electrically conductive layer. A method for monolithically integrating CdTe PV cells is also provided.

Abstract: Methods of making multilayered, hydrogen-containing intermetallic structures including at least two adjacent metal layers are disclosed. At least one of the metal layers contains hydrogen, which can be introduced into the metal by plasma hydrogenation. The intermetallic structures can have high hydrogen contents and micrometer-sized and nanometer-sized dimensions.

Abstract: Methods of making multi-layered, hydrogen-containing thermite structures including at least one metal layer and at least one metal oxide layer adjacent to the metal layer are disclosed. At least one of the metal layers contains hydrogen, which can be introduced by plasma hydrogenation. The thermite structures can have high hydrogen contents and small dimensions, such as micrometer-sized and nanometer-sized dimensions.

Abstract: Methods of making multilayered, hydrogen-containing intermetallic structures including at least two adjacent metal layers are disclosed. At least one of the metal layers contains hydrogen, which can be introduced into the metal by plasma hydrogenation. The intermetallic structures can have high hydrogen contents and micrometer-sized and nanometer-sized dimensions.

Abstract: A method of fabricating a solar cell is provided. The method includes depositing a transparent conductive contact layer on a surface of a substrate, where the transparent conductive contact layer is configured to act as a front electrode for the solar cell, depositing a window layer over the transparent conductive contact layer, depositing an absorber layer on the window layer, wherein the absorber layer and the window layer are oppositely doped and form a semiconductor junction, and where at least one of the window layer or the absorber layer is deposited by employing high power pulsed magnetron sputtering, and depositing an electrically conductive film on the semiconductor junction, wherein the electrically conductive film is configured to act as a back electrode layer for the solar cell.

Abstract: Disclosed herein is an article comprising a metallic substrate; an insulating layer; the insulating layer being disposed on the metallic layer in an expanding thermal plasma; and a semiconductor layer; the semiconductor layer being disposed on the insulating layer. Disclosed herein too is a method comprising disposing an insulating layer on a metallic substrate; the insulating layer being in intimate contact with the metallic layer; wherein the insulating layer is derived from a metal-organic precursor, and wherein insulating layer is deposited in an expanding thermal plasma; and disposing a semiconductor layer on the insulating layer.

Abstract: A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described.

Abstract: The present invention is directed to a salt optic provided with a multilayer coating in order to improve upon the moisture resistance of a salt optic, when compared to the moisture resistance of an uncoated salt optic. In one aspect, the present invention is comprised of a coated salt optic having at least a first coating layer and a second coating layer, the first coating layer being surface-smoothing layer and adhesion layer, and the second coating layer being a moisture barrier layer.

Abstract: One exemplary embodiment is a semiconductor structure, that can include a semiconductor substrate of one conductivity type, having a front surface and a back surface, a first semiconductor layer disposed on the front surface of the semiconductor substrate, a second semiconductor layer disposed on a portion of the back surface of the semiconductor substrate, and a third semiconductor layer disposed on another portion of the back surface of the semiconductor substrate. Each of the second and third semiconductor layers may be compositionally graded through its depth, from substantially intrinsic at an interface with the substrate, to substantially conductive at an opposite side, and have a selected conductivity type obtained by the incorporation of one or more selected dopants.

Abstract: One exemplary embodiment of a semiconductor structure can include: (a) a semiconductor substrate of one conductivity type, having a front surface and a back surface and including at least one via through the semiconductor substrate, where the at least one via is filled with a conductive material; and (b) a semiconductor layer disposed on at least a portion of the front or back surface of the semiconductor substrate, where the semiconductor layer is compositionally graded through its depth with one or more selected dopants, and the conductive material is configured to electrically couple the semiconductor layer to at least one front contact disposed on or over the surface of the substrate.

Abstract: In some embodiments, the present invention is directed to compositionally-graded hybrid nanostructure-based photovoltaic devices comprising elongated semiconductor nanostructures and an amorphous semiconductor single layer with continuous gradation of doping concentration across its thickness from substantially intrinsic to substantially conductive. In other embodiments, the present invention is directed to methods of making such photovoltaic devices, as well as to applications which utilize such devices (e.g., solar cell modules).

Abstract: A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate.

Abstract: A semiconductor structure is described, which includes a semiconductor substrate of one conductivity type, having a front surface and a back surface. A first amorphous semiconductor layer is applied on the front surface; and second and third amorphous semiconductor layers are disposed on portions of the back surface of the substrate. The second and third layers are each compositionally graded through their depth, from substantially intrinsic at the interface with the substrate, to substantially conductive at their opposite surfaces. In some instances, the first semiconductor layer is also compositionally graded, while in other instances, it is intrinsic in character. The semiconductor structures can function as solar cells; and modules which include a number of such cells represent another embodiment of the invention. Methods for making a photovoltaic device are also described.

Abstract: The present invention is directed to an IR transmissive coating comprised of deuterated amorphous carbon (a-C:D).

Abstract: A method of forming a hydrogenated amorphous germanium carbon (?-GeCx:H) film on a surface of an infrared (IR) transmissive material such as a chalcogenide is provided. The method includes positioning an IR transmissive material in a reactor chamber of a parallel plate plasma reactor and thereafter depositing a hydrogenated amorphous germanium carbon (?-GeCx:H) film on a surface of the IR transmissive material. The depositing is performed at a substrate temperature of about 130° C. or less and in the presence of a plasma which is derived from a gas mixture including a source of germanium, an inert gas, and optionally hydrogen. Optical transmissive components, such as IR sensors and windows, that have improved abrasion-resistance are also provided.

Abstract: A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate.

Abstract: Chemical vapor deposition is performed using a plurality of expanding thermal plasma generating means to produce a coating on a substrate, such as a thermoplastic and especially a polycarbonate substrate. The substrate is preferably moved past the generating means. Included are methods which coat both sides of the substrate or which employ multiple sets of generating means, either in a single deposition chamber or in a plurality of chambers for deposition of successive coatings. The substrate surfaces spaced from the axes of the generating means are preferably heated to promote coating uniformity.