Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma assisted processing thereof. In one embodiment a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

Abstract: Embodiments of a slot bar configured to secure one or more sheet materials are disclosed herein. The slot bar being configured to receive one or more retaining strips. The slot bar includes a base section and a first slot base extending substantially perpendicularly from the base section. The base section and first slot base define a first ledge region. The slot bar also includes a first slot wall extending from the first slot base and a first slot arm extending from the first slot wall. The first slot arm is also substantially parallel to and spatially disposed from the first slot base. The first slot base, the first slot wall, and the first slot arm define a first slot configured to receive the first retaining strip so as to secure a first sheet material between the first retaining strip and the first ledge region.

Abstract: The present disclosure relates to apparatus and methods that manipulate the amplitude and phase of the voltage or current of an edge ring. The apparatus includes an electrostatic chuck having a chucking electrode embedded therein for chucking a substrate to the electrostatic chuck. The apparatus further includes a baseplate underneath the substrate to feed RF power to the substrate. The apparatus further includes an edge ring disposed over the electrostatic chuck. The apparatus further includes an edge ring electrode located underneath the edge ring. The apparatus further includes a radio frequency (RF) circuit including a first variable capacitor coupled to the edge ring electrode.

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse—bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

Abstract: A surface cleaning apparatus including a housing supporting a suction source including a motor with an axle that rotates a fan and a dirt collection container having an elongate axis (A). The elongate axis (A) of the dirt collection container is transverse to an axis of the axle of the motor, and the axis of the axle of the motor is offset from the elongate axis of the dirt collection container.

Abstract: Helmets and methods for manufacturing a helmet are described. An example helmet includes a shell and a shock absorbing liner attached to the shell. The shock absorbing liner includes a cavity. The helmet a shock absorbing insert formed of a material different than the material of the shock absorbing liner. The cavity is configured to retain the shock absorbing insert.

Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma assisted processing thereof. In one embodiment a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

Abstract: Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

Abstract: Embodiments described herein relate generally to plant extract compositions and methods to isolate cutin-derived monomers, oligomers, and mixtures thereof for application in agricultural coating formulations, and in particular, to methods of preparing plant extract compositions that include functionalized and non-functionalized fatty acids and fatty esters (as well as their oligomers and mixtures thereof), which are substantially free from accompanying plant-derived compounds (e.g., proteins, polysaccharides, phenols, lignans, aromatic acids, terpenoids, flavonoids, carotenoids, alkaloids, alcohols, alkanes, and aldehydes) and can be used in agricultural coating formulations.

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

Abstract: A system configured to display an augmented-reality user interface for a barcode reader using a heads-up display assembly is provided. An augmented reality adapter having a camera and a presentation generator is configured to identify a unique identifier associated with a handheld barcode reader and provide an augmented reality display based on data captured by the handheld barcode reader. The presentation generator may position the augmented reality display based on a location of the unique identifier within the field of view (FOV) of the camera.

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

Abstract: Embodiments of a storage compartment for self-contained breathing apparatuses (SCBA) are provided. The storage compartment includes a deployment mechanism to facilitate efficient and ergonomic donning of the SCBA. Advantageously, the storage compartment is closed off from the cabin of a firetruck and is accessed from the exterior of the firetruck so that any chemicals that off-gas from the SCBA are contained in their own compartment separate from the interior of the firetruck's cabin. The SCBA are able to be deployed from the storage compartment in a variety of different ways. Each embodiment of the deployment mechanism is configured to deploy the SCBA from an elevated position within the storage compartment to an exterior position that is roughly at the level of a firefighter's back.

Abstract: The present disclosure generally relates to apparatuses and methods that control RF amplitude of an edge ring. The apparatuses and methods include an electrode that is coupled to ground through a variable capacitor. The electrode may be ring-shaped and embedded in a substrate support including an electrostatic chuck. The electrode may be positioned beneath the perimeter of a substrate and/or the edge ring. As the plasma sheath drops adjacent the edge ring due to edge ring erosion, the capacitance of the variable capacitor is adjusted in order to affect the RF amplitude near the edge of the substrate. Adjustment of the RF amplitude via the electrode and variable capacitor results in adjustment of the plasma sheath near the substrate perimeter.

Abstract: A chuck assembly for plasma processing, including: an electrostatic chuck having a substrate support surface on a first side; a facility plate coupled to the electrostatic chuck on a second side; a RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly, the first portion being a bowl-shaped section, wherein the second portion connects to the first portion at an opening defined in the bowl-shaped section; wherein the first portion of the RF feed contacts the periphery of the facility plate at a circumference circumference having a radius greater than one-half of a radius of the facility plate, the radius of the circumference being less than the radius of the facility plate; a grounded shield disposed below and surrounding at least a portion of the bowl-shaped section.

Abstract: Embodiments of the present disclosure generally relate to a system used in semiconductor manufacturing. More specifically, embodiments of the present disclosure relate to a system for pulsed DC biasing and clamping a substrate. In one embodiment, the system includes a plasma chamber having an ESC for supporting a substrate. An electrode is embedded in the ESC and is electrically coupled to a biasing and clamping circuit. The biasing and clamping circuit includes at least a shaped DC pulse voltage source and a clamping network. The clamping network includes a DC voltage source and a diode, and a resistor. The shaped DC pulse voltage source and the clamping network are connected in parallel. The biasing and clamping network automatically maintains a substantially constant clamping voltage, which is a voltage drop across the electrode and the substrate when the substrate is biased with pulsed DC voltage, leading to improved clamping of the substrate.

Abstract: The present disclosure relates to an apparatus and method that manipulate the voltage at an edge ring relative to a substrate located on a substrate support located within a processing chamber. The apparatus includes a substrate support assembly that has a body having a substrate support portion having a substrate electrode embedded therein for applying a substrate voltage to a substrate. The body of the substrate support assembly further has an edge ring portion disposed adjacent to the substrate support portion. The edge ring portion has an edge ring electrode embedded therein for applying an edge ring voltage to an edge ring. The apparatus further includes an edge ring voltage control circuit coupled to the edge ring electrode. A substrate voltage control circuit is coupled to the substrate electrode. The edge ring voltage control circuit and the substrate voltage control circuit are independently tunable to generate a difference in voltage between the edge ring voltage and the substrate voltage.

Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.