Abstract: A light emitting diode (LED) device includes micro LEDs and one or more macro LEDs formed on the same semiconductor substrate. Each micro LED emits modulated light to perform communication with another device. Each macro LED emits light to illuminate an environment surrounding the LED device and the size of the macro LED is relatively larger than the micro LED. The LED device may further include a notch filter to filter light generated by the macro LEDs so that the light from the macro LEDs do not interfere with communication performed by the micro LEDs.

Abstract: Display devices with improved display contrast and methods of manufacturing the display devices. Some embodiments include a method of manufacturing a light emitting diode (LED) array. The method includes forming a first mesa area of a first LED and a second mesa area of a second LED, where a trench is defined between the first and second mesa areas. At least a portion of the trench is filled with a non-transparent or substantially non-transparent polymeric material that absorbs light emitted from the first and second LEDs.

Abstract: A display device includes a display panel having a first emission region, a second emission region, and a third emission region. The first emission region is surrounded by the second emission region and the second emission region is surrounded by the third emission region. The display panel includes a plurality of light emitters arranged in the first emission region, the second emission region, and the third emission region, respective light emitters of the plurality of light emitters configured to emit light. The first emission region has a first density of light emitters, the second emission region has a second density of light emitters that is less than the first density and the third emission region has a third density of light emitters that is less than the second density.

Abstract: A display device may include (1) a light-emitting layer having a plurality of light-emitting regions, with at least some of the light-emitting regions operable to emit a varying, controlled intensity of light at a fixed location, (2) a color selector layer disposed over the plurality of light-emitting regions, the color selector layer having at least one group of color selectors, and (3) an actuator operable to move the color selector layer relative to the light-emitting layer. The movement of the color selector layer may result in each color selector of the at least one group of color selectors passing each fixed location. Various other apparatus, systems, and methods are also disclosed.

Abstract: The apparatus may include a display device that includes an integral display which receives bit-depth assignment data and configures, based on the bit-depth assignment data, the integral display to display image data at differing bit depths within various display regions of the integral display. This may cause the display device to consume a lower proportion of image data to drive display regions of the integral display that are configured to display image data at lower bit depths and maintain higher image quality within display regions of the integral display that are configured to display image data at higher bit depths. The apparatus may also reconfigure the integral display in response to receiving updated bit-depth assignment data. Various other methods, systems, and computer-readable media are also disclosed.

Abstract: There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: The disclosed projector device may include (1) a first monochromatic emitter array having a plurality of emitters of a first color disposed in a two-dimensional configuration and (2) a second monochromatic emitter array having a plurality of emitters of a second color disposed in a two-dimensional configuration. The first and second monochromatic emitter arrays may be configured to emit images of the first and second colors into a waveguide configuration, and the first color may be different than the second color. Associated display systems and methods are also provided.

Abstract: The disclosed waveguide display device may include a waveguide and one or more projector assemblies configured to project image light into the waveguide, where each of the one or more projector assemblies includes a first monochromatic emitter array having a plurality of emitters of a first color disposed in a two-dimensional configuration and a second monochromatic emitter array having a plurality of emitters of a second color disposed in a two-dimensional configuration. The display device may also include at least one application specific integrated circuit (ASIC) configured to drive the first and second monochromatic emitter arrays to emit images of the first and second color along a common axis, with the first color being different from the second color. Various other devices, systems, and methods are also disclosed.

Abstract: The disclosed apparatus may include (1) a plurality of monochromatic emitter arrays, where each of the plurality of monochromatic emitter arrays has a plurality of emitters disposed in a two-dimensional configuration and emits a monochromatic image of a corresponding color, (2) a waveguide configuration that includes (a) a top surface, (b) a bottom surface disposed opposite the top surface, (c) a coupling area that receives the monochromatic images, and (d) a decoupling area that projects a plurality of instances of a polychromatic image including a combination of the monochromatic images toward an eyebox through the bottom surface, and (3) an actuator system that produces lateral shifting of the plurality of instances of the polychromatic image between at least two positions relative to the waveguide configuration. Various other methods and systems are also disclosed.

Abstract: There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

Abstract: Embodiments relate to a micro light emitting diode (LED) having photonic crystal columns extending from a surface to the opposite surface of a transparent semiconductor layer to increase directionality of the light emitted from the micro LED. The photonic crystal columns are arranged in two-dimension. The photonic crystal columns can be produced by etching the transparent semiconductor layer with plasma and growing the photonic crystal columns in the transparent semiconductor layer. The photonic crystal columns can also be produced by etching nano-meter scale regions of the transparent semiconductor layer.

Abstract: There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: There is herein described a structure for converting light from LED arrays from shorter wavelength, for example blue, into longer wavelength light, for example red and green, so as to form displays containing red, green and blue sub-pixels. More particularly, the present invention relates to a structure and process in which light from LED arrays of the same wavelength is converted into alternate colours by means of a colour conversion structure.

Abstract: There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: Display devices with improved display contrast and methods of manufacturing the display devices. Some embodiments include a method of manufacturing a light emitting diode (LED) array. The method includes forming a first mesa area of a first LED and a second mesa area of a second LED, where a trench is defined between the first and second mesa areas. At least a portion of the trench is filled with a non-transparent or substantially non-transparent polymeric material that absorbs light emitted from the first and second LEDs.