Abstract: Mechanisms and methods for pressurized fluid injection and sealing into containment vessels using a divided valve mechanism are disclosed. The invention describes designs and methods in which a valve may be plugged by an actuator then the valve and actuator are then disjoined, allowing the containment vessel to then be sealed but without the additional mass or volume of the actuation mechanism and without fluid loss from the containment vessel.

Abstract: Mechanisms and methods for injecting and sealing pressurized fluid into containment vessels using a divided valve mechanism are disclosed. The invention describes designs and methods in which a valve may be plugged by an actuator, and then the valve and actuator may then be disjoined, allowing the containment vessel to thereby be sealed without the additional mass or volume of the actuation mechanism and without fluid loss from the containment vessel.

Abstract: A safe electrolyte which comprises a liquefied gas solvent that will transition from a liquid state to a gas state (“gas off”) at a pressure of 100 kPa and temperature of 293.15 K is further disclosed. A first mixture is formed from a first electrolyte component (one or more solvents) mixed with a second electrolyte component (one or more hydrocarbon co-solvents). The addition of the second electrolyte component (1) lowers the vapor pressure of the first mixture by at least 10% as compared to the vapor pressure of the first electrolyte component alone when measured at 293.15 K and (2) results in a vapor pressure of the first mixture above 100 kPa at a temperature of 293.15 K. The second electrolyte component may also be selected to lower the global warming potential (GWP) of the first mixture by at least 10% as compared to GWP of the first electrolyte component alone. The safe liquefied gas electrolyte is formed by mixing a third electrolyte component (one or more salts) to the first mixture.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: Disclosed is a novel method for constructing an electrochemical energy storage cell with a first and a second electrode. The method includes (a) coating the first electrode with a first electrolyte component to form a first coated electrode embedded within the first electrolyte component; (b) inserting the first coated electrode and the second electrode into a cell housing; (c) sealing the cell housing, wherein the cell housing comprises a solvent injection port; (d) injecting a liquefied gas solvent into the cell through the solvent injection port, wherein the solvent has a vapor pressure above an atmospheric pressure of 100 kPa at a temperature of 293 0.15 K; and (e) sealing the solvent injection port. This method can be modified in step (d) to include the injection of a liquid solvent.

Abstract: A battery device is disclosed that includes an ionically conducting electrolyte comprising a mixture of a compressed gas solvent and one or more solid or liquid salts, wherein the compressed gas solvent comprises at least a first component that has a vapor pressure above 100 kPa at a room temperature of 293.15 K. The device also includes a housing enclosing the ionically conducting electrolyte under a pressurized condition to maintain the compressed gas solvent at a pressure higher than 100 kPa at a room temperature of 293.15 K. The device also includes at least two conducting electrodes in contact with the ionically conducting electrolyte.

Abstract: Novel electrolytes, and techniques for making and devices using such electrolytes, which are based on compressed gas solvents are disclosed. Unlike conventional electrolytes, the disclosed electrolytes are based on “compressed gas solvents” mixed with various salts, referred to as “compressed gas electrolytes.” Various combinations of salt and solvents are disclosed to increase performance of electrochemical capacitors using liquefied gas electrolytes.

Abstract: Chemical additives are disclosed to increase solubility of salts, increase voltage limit, and lower flammability of liquefied gas electrolytes.

Abstract: Novel electrolytes, and techniques for making and devices using such electrolytes, which are based on compressed gas solvents are disclosed. Unlike conventional electrolytes, the disclosed electrolytes are based on “compressed gas solvents” mixed with various salts, referred to as “compressed gas electrolytes.” Various combinations of salt and solvents are disclosed to increase performance of electrochemical capacitors using liquefied gas electrolytes.

Abstract: Disclosed are novel methods and techniques for introducing liquefied gas solvents into electrochemical devices. Unlike conventional electrolytes, the disclosed electrolytes are based on “liquefied gas solvents” mixed with various salts, referred to as “liquefied gas electrolytes.” The disclosed liquefied gas electrolytes can have wide electrochemical potential windows, high conductivity, low temperature capability and/or high-pressure solvent properties. Non-limiting examples of a class of liquefied gases that can be used as solvents for electrolytes include hydrofluorocarbons, and in particular include fluoromethane, difluoromethane, tetrafluoroethane, and pentafluoroethane.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Disclosed are novel methods and techniques for introducing liquefied gas solvents into electrochemical devices. Unlike conventional electrolytes, disclosed electrolytes are based on “liquefied gas solvents” mixed with various salts, referred to as “liquefied gas electrolytes.” The disclosed liquefied gas electrolytes can have wide electrochemical potential windows, high conductivity, low temperature capability and/or high pressure solvent properties. Non-limiting examples of a class of liquefied gases that can be used as solvent for electrolytes include hydrofluorocarbons, in particular fluoromethane, difluoromethane, tetrafluoroethane, pentafluoroethane.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: A method for using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (C2H4F3N), 1,1,2-Trifluoroethan-1-amine (Iso-C2H4F3N), 2,2,3,3,3-Pentafluoropropylamine (C3H4F5N), 1,1,1,3,3-Pentafluoro-2-Propanamine (Iso-C3H4F5N), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R—C3H4F5N) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S—C3H4F5N), 1,1,1,3,3,3-Hexafluoroisopropylamine (C3H3F6N) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-C3H3F6N) to selectively plasma etching silicon containing films, such as a dielectric antireflective coat (DARC) layer (e.g., SiON), alternating SiO/SiN layers, alternating SiO/p-Si layers, versus a photoresist layer and/or a hard mask layer (e.g., amorphous carbon layer), wherein the photoresist layer is reinforced and SiO/SiN and/or SiO/p-Si are etched non-selectively.