Abstract: A method for using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (C2H4F3N), 1,1,2-Trifluoroethan-1-amine (Iso-C2H4F3N), 2,2,3,3,3-Pentafluoropropylamine (C3H4F5N), 1,1,1,3,3-Pentafluoro-2-Propanamine (Iso-C3H4F5N), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R—C3H4F5N) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S—C3H4F5N), 1,1,1,3,3,3-Hexafluoroisopropylamine (C3H3F6N) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-C3H3F6N) to selectively plasma etching silicon containing films, such as a dielectric antireflective coat (DARC) layer (e.g., SiON), alternating SiO/SiN layers, alternating SiO/p-Si layers, versus a photoresist layer and/or a hard mask layer (e.g., amorphous carbon layer), wherein the photoresist layer is reinforced and SiO/SiN and/or SiO/p-Si are etched non-selectively.

Abstract: Silicon nitride plasma etching processes are disclosed that minimize the SiN roughness layer on a substrate having a SiN layer thereon by simultaneously introducing an oxidizer at a predetermined flow rate and an etch gas into a plasma reaction chamber containing the substrate. The etch gas has the formula CxHyFz, wherein x is 2-5, z is 1 or 2, 2x+2=y+z, and a fluorine atom is located on a terminal carbon atom of the etch gas.

Abstract: Silicon nitride plasma etching processes are disclosed that minimize the SiN roughness layer on a substrate having a SiN layer thereon by simultaneously introducing an oxidizer at a predetermined flow rate and an etch gas into a plasma reaction chamber containing the substrate. The etch gas has the formula CxHyFz, wherein x is 2-5, z is 1 or 2, 2x+2=y+z, and a fluorine atom is located on a terminal carbon atom of the etch gas.