Abstract: An embodiment disclosed herein includes a method of dicing a wafer comprising a plurality of integrated circuits. In an embodiment, the method comprises forming a mask above the semiconductor wafer, and patterning the mask and the semiconductor wafer with a first laser process. The method may further comprise patterning the mask and the semiconductor wafer with a second laser process, where the second laser process is different than the first laser process. In an embodiment, the method may further comprise etching the semiconductor wafer with a plasma etching process to singulate the integrated circuits.

Abstract: Embodiments of the present disclosure include methods of determining scribing offsets in a hybrid laser scribing and plasma dicing process. In an embodiment, the method comprises forming a mask above a semiconductor wafer. In an embodiment, the semiconductor wafer comprises a plurality of dies separated from each other by streets. In an embodiment, the method further comprises patterning the mask and the semiconductor wafer with a laser scribing process. In an embodiment, the patterning provides openings in the streets. In an embodiment, the method further comprises removing the mask, and measuring scribing offsets of the openings relative to the streets.

Abstract: An embodiment disclosed herein includes a method of dicing a wafer comprising a plurality of integrated circuits. In an embodiment, the method comprises forming a mask above the semiconductor wafer, and patterning the mask and the semiconductor wafer with a first laser process. The method may further comprise patterning the mask and the semiconductor wafer with a second laser process, where the second laser process is different than the first laser process. In an embodiment, the method may further comprise etching the semiconductor wafer with a plasma etching process to singulate the integrated circuits.

Abstract: Water soluble organic-inorganic hybrid masks and mask formulations, and methods of dicing semiconductor wafers are described. In an example, a mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. A p-block metal compound, an s-block metal compound, or a transition metal compound is dissolved throughout the water-soluble matrix.

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

Abstract: Methods and apparatus for processing a substrate area provided herein. For example, methods for enhancing surface hydrophilicity on a substrate comprise a) supplying, using a remote plasma source, water vapor plasma to a processing volume of a plasma processing chamber to treat a bonding surface of the substrate, b) supplying at least one of microwave power or RF power at a frequency from about 1 kHz to 10 GHz and a power from about 1 kW to 10 kW to the plasma processing chamber to maintain the water vapor plasma within the processing volume during operation, and c) continuing a) and b) until the bonding surface of the substrate has a hydrophilic contact angle of less than 10°.

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

Abstract: Methods and apparatus for far edge trimming are provided herein. For example, an apparatus includes an integrated tool for processing a silicon substrate, comprising a vacuum substrate transfer chamber, an edge trimming apparatus coupled to the vacuum substrate transfer chamber and comprising a high pulse frequency laser and substrate support, wherein at least one of the high pulse frequency laser or the substrate support are movable with respect to each other and configured to trim about 2 mm to about 5 mm from a peripheral edge of a substrate when disposed on the substrate support, and a plasma etching apparatus coupled to the vacuum substrate transfer chamber and configured to etch silicon.

Abstract: Water soluble organic-inorganic hybrid masks and mask formulations, and methods of dicing semiconductor wafers are described. In an example, a mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. A p-block metal compound, an s-block metal compound, or a transition metal compound is dissolved throughout the water-soluble matrix.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a split laser beam laser scribing process, such as a split shaped laser beam laser scribing process, to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Abstract: Water soluble organic-inorganic hybrid masks and mask formulations, and methods of dicing semiconductor wafers are described. In an example, a mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. A p-block metal compound, an s-block metal compound, or a transition metal compound is dissolved throughout the water-soluble matrix.

Abstract: An embodiment disclosed herein includes a method of dicing a wafer comprising a plurality of integrated circuits. In an embodiment, the method comprises forming a mask above the semiconductor wafer, and patterning the mask and the semiconductor wafer with a first laser process. The method may further comprise patterning the mask and the semiconductor wafer with a second laser process, where the second laser process is different than the first laser process. In an embodiment, the method may further comprise etching the semiconductor wafer with a plasma etching process to singulate the integrated circuits.

Abstract: Embodiments of the present disclosure include methods of determining scribing offsets in a hybrid laser scribing and plasma dicing process. In an embodiment, the method comprises forming a mask above a semiconductor wafer. In an embodiment, the semiconductor wafer comprises a plurality of dies separated from each other by streets. In an embodiment, the method further comprises patterning the mask and the semiconductor wafer with a laser scribing process. In an embodiment, the patterning provides openings in the streets. In an embodiment, the method further comprises removing the mask, and measuring scribing offsets of the openings relative to the streets.

Abstract: Light-absorbing masks and methods of dicing semiconductor wafers are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits involves forming a mask above the semiconductor wafer. The mask includes a water-soluble matrix based on a solid component and water, and a light-absorber species throughout the water-soluble matrix. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask with gaps and corresponding trenches in the semiconductor wafer in regions between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the patterned mask to extend the trenches and to singulate the integrated circuits. The patterned mask protects the integrated circuits during the plasma etching.

Abstract: Water soluble organic-inorganic hybrid masks and mask formulations, and methods of dicing semiconductor wafers are described. In an example, a mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. A p-block metal compound, an s-block metal compound, or a transition metal compound is dissolved throughout the water-soluble matrix.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a spatially multi-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a spatially multi-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a uniform rotating laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a spatially multi-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.