Abstract: A method of processing a substrate 30 comprises exposing the substrate 30 to an energized process gas to etch features 67 on the substrate 30 and exposing the substrate 30 to an energized cleaning gas to remove etchant residue 70 and/or remnant resist 60 from the substrate 30. To enhance the cleaning process, the substrate 30 may be treated before, during or after the cleaning process by exposing the substrate 30 to an energized treating gas comprising a halogen species.

Abstract: Apparatus and method for mounting a workpiece support platform or platen within a semiconductor process vacuum chamber to provide electrical or thermal insulation and mechanical stability, but yet minimize mechanical stresses due to differential thermal expansion between the platen and the dielectric spacer. Specifically, the invention includes a workpiece support platen having a rear surface abutting a front surface of a platen-support shelf. The shelf preferably provides electrical or thermal insulation between the platen and the wall of the vacuum chamber. The shelf is attached to the enclosure of the vacuum chamber, but the platen is not rigidly attached to the shelf. Instead, a pressure actuator, such as a spring or pneumatic piston, presses the platen against the shelf. In one embodiment, the pressure actuator can be turned off to allow the platen to expand or contract during periods of heating or cooling, such as when the chamber is turned off or on before or after maintenance.

Abstract: A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.

Abstract: The present invention provides an apparatus and process for plasma cleaning the interior surfaces of semiconductor processing chambers. The method is directed to the dry etching of accumulated contaminant residues attached to the inner surfaces of the plasma processing chamber and includes introducing a cleaning gas mixture of a halogen-containing gas; activating a plasma in an environment substantially free of oxygen species; contacting the contaminant residues with the activated cleaning gas to volatilize the residues; and removing the gaseous by-products from the chamber. The etchant gaseous mixture comprises an even or greater amount of at least one fluorine-containing gas and an even or lesser amount of at least one chlorine-containing gas. The instant invention enables the intermittent use of the cleaning steps in an ongoing plasma processing of semiconductor wafers without chamber downtime and significant loss of wafer production.

Abstract: The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species.

Abstract: The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member surrounded by at least one annular member with a gap therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species.

Abstract: A process for passivating, and optionally stripping and inhibiting corrosion of an etched substrate (20), is described. In the process, a substrate (20) having etchant byproducts (24) thereon, is placed into a vacuum chamber (52), and passivated in a multicycle passivation process comprising at least two passivating steps. In each passivating step, passivating gas is introduced into the vacuum chamber (52) and a plasma is generated from the passivating gas. When the substrate also has remnant resist (26) thereon, the resist (26) is stripped in a multicycle passivation and stripping process, each cycle including a passivating step and a stripping step. The stripping step is performed by introducing a stripping gas into the vacuum chamber (52) and generating a plasma from the stripping gas. In the multicycle process, the passivating and optional stripping steps, are repeated at least once in the same order that the steps were done.