Abstract: The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performance parameter is known to be indicative of a particular fabrication process in the fabrication. Evaluation information may then be obtained based on a variance of the value of the performance parameter of the plurality of locations. This may be done without affecting a usability of a chip that is created from the die. The evaluation information may be used to evaluate how one or more processes that include the particular fabrication process that was indicated by the performance parameter value was performed.

Abstract: The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performance parameter is known to be indicative of a particular fabrication process in the fabrication. Evaluation information may then be obtained based on a variance of the value of the performance parameter at the plurality of locations. This may be done without affecting a usability of a chip that is created from the die. The evaluation information may be used to evaluate how one or more processes that include the particular fabrication process that was indicated by the performance parameter value was performed.

Abstract: The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performance parameter is known to be indicative of a particular fabrication process in the fabrication. Evaluation information may then be obtained based on a variance of the value of the performance parameter at the plurality of locations. This may be done without affecting a usability of a chip that is created from the die. The evaluation information may be used to evaluate how one or more processes that include the particular fabrication process that was indicated by the performance parameter value was performed.

Abstract: A bi-convex solid immersion lens is disclosed, having a top and bottom convex surfaces. The radius of curvature of the bottom surface is larger than that of the top surface. A conical sloped side-wall connects the top and bottom surface.

Abstract: The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performance parameter is known to be indicative of a particular fabrication process in the fabrication. Evaluation information may then be obtained based on a variance of the value of the performance parameter at the plurality of locations. This may be done without affecting a usability of a chip that is created from the die. The evaluation information may be used to evaluate how one or more processes that include the particular fabrication process that was indicated by the performance parameter value was performed.

Abstract: An integrated housing for a lens and a photodetector, which is being cooled to low temperatures to enable the detector to detect faint emission of photons. An enclosure is provided to which a lens is affixed from one side using a retaining ring, and a photodetector is affixed from the opposite side. The enclosure is affixed to a TE cooler. The enclosure and the retaining ring are made from materials having similar thermal expansion coefficients.

Abstract: A bi-convex solid immersion lens is disclosed, having a top and bottom convex surfaces. The radius of curvature of the bottom surface is larger than that of the top surface. A conical sloped side-wall connects the top and bottom surface.

Abstract: A method for manufacturing an improved APD structure and an improved manner of operating APD's particularly beneficial for a single photon detection applications are provided. An APD is provided having an absorption region, a control region, and a multiplication region, wherein the multiplication region has a k value of approximately 1. In one example the multiplication region comprises a doped InP layer. The field control layer is designed so as to produce a reduction of electric field that is equal to the multiplication region's breakdown electric field, plus or minus 5V/&mgr;m. The method comprises applying a potential across the APD so as to induce an electric field across the multiplication region that exceeds the breakdown field; while having the control region shield the absorption region to prevent excessive noise.

Abstract: A bi-convex solid immersion lens is disclosed. Unlike conventional plano-convex solid immersion lenses having a flat bottom surface, the disclosed lens has a convex bottom surface. The radius of curvature of the bottom surface is smaller than that of the object to be inspected. This construction allows for a more accurate determination of the location of the inspected feature, and enhances coupling of light between the immersion lens and the inspected object. The disclosed lens is particularly useful for use in microscope for inspection of semiconductor devices and, especially flip-chip (or chip scale) packaged devices. The immersion lens can also be incorporated in a read or read/write head of optical memory media.

Abstract: A method for manufacturing an improved APD structure and an improved manner of operating APD's particularly beneficial for a single photon detection applications are provided. An APD is provided having an absorption region, a control region, and a multiplication region, wherein the multiplication region has a k value of approximately 1. In one example the multiplication region comprises a doped InP layer. The field control layer is designed so as to produce a reduction of electric field that is equal to the multiplication region's breakdown electric field, plus or minus 5 V/&mgr;m. The method comprises applying a potential across the APD so as to induce an electric field across the multiplication region that exceeds the breakdown field; while having the control region shield the absorption region to prevent excessive noise.

Abstract: An improved APD structure and an improved manner of operating APD's particularly beneficial for a single photon detection applications are provided. An APD is provided having an absorption region, a control region, and a multiplication region, wherein the multiplication region has a k value of approximately 1. In one example the multiplication region comprises a doped InP layer. The field control layer is designed so as to produce a reduction of electric field that is equal to the multiplication region's breakdown electric field, plus or minus 5V/&mgr;m. The method comprises applying a potential across the APD so as to induce an electric field across the multiplication region that exceeds the breakdown field; while having the control region shield the absorption region to prevent excessive noise.

Abstract: A bi-convex solid immersion lens is disclosed. Unlike conventional plano-convex solid immersion lenses having a flat bottom surface, the disclosed lens has a convex bottom surface. The radius of curvature of the bottom surface is smaller than that of the object to be inspected. This construction allows for a more accurate determination of the location of the inspected feature, and enhances coupling of light between the immersion lens and the inspected object. The disclosed lens is particularly useful for use in microscope for inspection of semiconductor devices and, especially flip-chip (or chip scale) packaged devices. The immersion lens can also be incorporated in a read or read/write head of optical memory media.

Abstract: A bi-convex solid immersion lens is disclosed. Unlike conventional plano-convex solid immersion lenses having a flat bottom surface, the disclosed lens has a convex bottom surface. The radius of curvature of the bottom surface is smaller than that of the object to be inspected. This construction allows for a more accurate determination of the location of the inspected feature, and enhances coupling of light between the immersion lens and the inspected object. The disclosed lens is particularly useful for use in microscope for inspection of semiconductor devices and, especially flip-chip (or chip scale) packaged devices. The immersion lens can also be incorporated in a read or read/write head of optical memory media.

Abstract: An improved APD structure and an improved manner of operating APD's particularly beneficial for a single photon detection applications are provided. An APD is provided having an absorption region, a control region, and a multiplication region, wherein the multiplication region has a k value of approximately 1. In one example the multiplication region comprises a doped InP layer. The field control layer is designed so as to produce a reduction of electric field that is equal to the multiplication region's breakdown electric field, plus or minus 5V/&mgr;m. The method comprises applying a potential across the APD so as to induce an electric field across the multiplication region that exceeds the breakdown field; while having the control region shield the absorption region to prevent excessive noise.