Patents by Inventor Jan Blochwitz

Jan Blochwitz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10873030
    Abstract: The present invention relates to a charge transporting semi-conducting material comprising: a) at least one electrical dopant, and b) a branched or cross-linked charge-transporting polymer comprising cyclobutenone cross-linking units of at least one of the general formulae la and/or lb, wherein aa) Pol1, Pol2, Pol3 and Pol4 are independently selected chains of the charge-transporting polymer, bb) X1, X2, X3, and X4 are independently selected optional spacer units or, independently, represent direct bonding of Pol1, Pol2, Pol3 and Pol4 chains to the cyclobutenone ring, cc) Z1, Z2, Z3, and Z4 are independently selected from H, halogen or a carbon-containing group; the charge transporting semi-conducting material being obtainable by a process comprising: i) providing a solution containing aaa) at least one precursor charge transporting compound comprising at least one covalently attacked alkenyloxy group having generic formula II wherein X is an optional spacer which is further linked to a charge transporting st
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: December 22, 2020
    Assignee: Novaled GmbH
    Inventors: Kay Lederer, Steffen Runge, Jan Blochwitz-Nimoth, Felix Limberg, Hartmut Krüger
  • Patent number: 10497888
    Abstract: The invention refers to a method for producing an organic transistor, the method comprising steps of providing a first electrode (2) on a substrate (1), generating a source-drain insulator (3) assigned at least partially to the substrate (1) and/or at least partially to the first electrode (2), generating a second electrode (4) assigned to the source-drain insulator (3), depositing an organic semiconducting layer (5) on the first electrode (2), the second electrode (4), and the source-drain insulator (3), generating a gate insulator (6) assigned to the organic semiconducting layer (5), and providing a gate electrode (7) assigned to the gate insulator (6). Further, the invention relates to an organic transistor.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: December 3, 2019
    Assignee: Novaled GmbH
    Inventors: Hans Kleemann, Gregor Schwartz, Jan Blochwitz-Nimoth
  • Patent number: 10396293
    Abstract: Electronic and optoelectronic devices are provided that may include at least one inorganic surface covered at least partly by an organic layer. The organic layer may include a compound having at least one anchor group anchoring the compound to the inorganic surface, at least one functional moiety, and at least one methylidenyl group. Compounds and methods for manufacturing electronic and optoelectronic devices also are provided.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: August 27, 2019
    Assignee: Novaled GmbH
    Inventors: Sylvia Nicht, Jan Blochwitz-Nimoth, Björn Lüssem, Karl Leo, Axel Fischer
  • Publication number: 20190058128
    Abstract: The present invention relates to a charge transporting semi-conducting material comprising: a) at least one electrical dopant, and b) a branched or cross-linked charge-transporting polymer comprising cyclobutenone cross-linking units of at least one of the general formulae la and/or lb, wherein aa) Pol1, Pol2, Pol3 and Pol4 are independently selected chains of the charge-transporting polymer, bb) X1, X2, X3, and X4 are independently selected optional spacer units or, independently, represent direct bonding of Pol1, Pol2, Pol3 and Pol4 chains to the cyclobutenone ring, cc) Z1, Z2, Z3, and Z4 are independently selected from H, halogen or a carbon-containing group; the charge transporting semi-conducting material being obtainable by a process comprising: i) providing a solution containing aaa) at least one precursor charge transporting compound comprising at least one covalently attacked alkenyloxy group having generic formula II wherein X is an optional spacer which is further linked to a charge transporting st
    Type: Application
    Filed: February 22, 2017
    Publication date: February 21, 2019
    Inventors: Kay Lederer, Steffen Runge, Jan Blochwitz-Nimoth, Felix Limberg, Hartmut Krüger
  • Publication number: 20170149001
    Abstract: The invention refers to a method for producing an organic transistor, the method comprising steps of providing a first electrode (2) on a substrate (1), generating a source-drain insulator (3) assigned at least partially to the substrate (1) and/or at least partially to the first electrode (2), generating a second electrode (4) assigned to the source-drain insulator (3), depositing an organic semiconducting layer (5) on the first electrode (2), the second electrode (4), and the source-drain insulator (3), generating a gate insulator (6) assigned to the organic semiconducting layer (5), and providing a gate electrode (7) assigned to the gate insulator (6). Further, the invention relates to an organic transistor.
    Type: Application
    Filed: March 27, 2015
    Publication date: May 25, 2017
    Inventors: Hans Kleemann, Gregor Schwartz, Jan Blochwitz-Nimoth
  • Publication number: 20160211461
    Abstract: Electronic and optoelectronic devices are provided that may include at least one inorganic surface covered at least partly by an organic layer. The organic layer may include a compound having at least one anchor group anchoring the compound to the inorganic surface, at least one functional moiety, and at least one methylidenyl group. Compounds and methods for manufacturing electronic and optoelectronic devices also are provided.
    Type: Application
    Filed: August 19, 2014
    Publication date: July 21, 2016
    Inventors: Sylvia Nicht, Jan Blochwitz-Nimoth, Björn Lüssem, Karl Leo, Axel Fischer
  • Patent number: 9062064
    Abstract: The present invention relates to the use of heterocyclic compounds as the charge transport material, blocker material or light-scattering material in electronic, optoelectronic or electroluminescent components.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: June 23, 2015
    Assignee: NOVALED AG
    Inventors: Olaf Zeika, Horst Hartmann, Ulrich Heggemann, Sascha Dorok, Jan Blochwitz-Nimoth, Ansgar Werner, Michael Hofmann, Carsten Rothe
  • Publication number: 20140203254
    Abstract: The invention relates to an organic electron component having a first electrode, a second electrode, a channel layer comprising an organic semiconducting material and a dopant material.
    Type: Application
    Filed: June 20, 2012
    Publication date: July 24, 2014
    Applicants: Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V., Novaled AG
    Inventors: Sascha Dorok, Jan Blochwitz-Nimoth, Tobias Canzler, Hagen Klauk, Frederik Ante
  • Patent number: 8653537
    Abstract: The invention relates to a layer assembly for a light-emitting component, in particular a phosphorescent organic light-emitting diode, having a hole-injecting contact and an electron-injecting contact which are each connected to a light-emitting region, wherein, in the light-emitting region, one light-emitting layer is made up of a material (M1) and another light-emitting layer is made up of another material (M2), where the material (M1) is ambipolar and preferentially transports holes and the other material (M2) is ambipolar and preferentially transports electrons; a heterotransition is formed by the material (M1) and the other material (M2) in the light-emitting region; an interface between the material (M1) and the other material (M2) is of the staggered type II; the material (M1) and the other material (M2) each contain an appropriate addition of one or more triplet emitter dopants; and an energy barrier for transfer of holes from the material (M1) into the other material (M2) and an energy barrier for tr
    Type: Grant
    Filed: June 16, 2005
    Date of Patent: February 18, 2014
    Assignee: Novaled AG
    Inventors: Gufeng He, Martin Pfeiffer, Jan Blochwitz-Nimoth
  • Publication number: 20140000684
    Abstract: The present invention concerns a method for forming an electrical interconnection in an organic photovoltaic device, the method comprising steps of providing a first conductive layer (31), providing an organic photovoltaic layer (32), over the first conductive layer, providing a second conductive layer (33), over the organic photovoltaic layer, and providing an electrical interconnection between the first conductive layer and the second conductive layer.
    Type: Application
    Filed: December 5, 2011
    Publication date: January 2, 2014
    Inventor: Jan Blochwitz-Nimoth
  • Patent number: 8569743
    Abstract: The invention relates to a light-emitting device, in particular a light-emitting diode, with an arrangement of layers on a substrate, wherein the arrangement of layers has an anode contact and a cathode contact which are in electrical contact with a light-emitting layer stack arranged between the anode contact and the cathode contact which, on its part, comprises a polymer layer consisting of a polymer material and a low-molecular layer of vacuum-deposited small molecules of an organic material, and wherein the small molecules of the low-molecular layer are formed as donor molecules with an oxidation potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of maximum approx. ?1.5 V, if the low-molecular layer is arranged adjacent to the cathode contact, and as acceptor molecules with a reduction potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of minimum approx. ?0.3 V if the low-molecular layer is arranged adjacent to the anode contact.
    Type: Grant
    Filed: April 13, 2007
    Date of Patent: October 29, 2013
    Assignee: Novaled AG
    Inventors: Jan Birnstock, Jan Blochwitz-Nimoth
  • Patent number: 8324613
    Abstract: The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and a second material, wherein the composite layer structure is provided as a stack of at least three non-mixed sub-layers made of the first material and the second material, respectively, wherein within the stack of the at least three non-mixed sub-layers each first material sub-layer is followed by an adjacent second material sub-layer and each second material sub-layer is followed by an adjacent first material sub-layer, and wherein the first material and the second material are selected to form a host-dopant material system for the electrical doping. The invention also relates to an electronic device.
    Type: Grant
    Filed: October 23, 2006
    Date of Patent: December 4, 2012
    Assignee: Novaled AG
    Inventors: Ansgar Werner, Jan Blochwitz-Nimoth, Tobias Canzler
  • Patent number: 8263429
    Abstract: A light-emitting component comprising organic layers and having several layers between a base contact and a cover contact, the corresponding process for its preparation. At least one polymer layer and two molecular layers are arranged, so that when the cover contact is a cathode, the layer adjacent to the cover contact is designed as an electron-transporting molecular layer and is doped with an organic or inorganic donor, the electron-transporting layer comprising a principal organic substance and a donor-type doping substance, the molecular weight of the dopant being more than 200 g/mole. When the cover contact is an anode, the layer adjacent to the cover contact is designed as a p-doped hole-transporting molecular layer and is doped with an organic or inorganic acceptor, the hole-transporting layer comprising a principal organic substance and an acceptor-like doping substance, the molecular weight of the dopant being more than 200 g/mole.
    Type: Grant
    Filed: February 8, 2008
    Date of Patent: September 11, 2012
    Assignee: Novaled AG
    Inventors: Jan Blochwitz-Nimoth, Gildas Sorin
  • Publication number: 20110309307
    Abstract: The present invention relates to the use of heterocyclic compounds as the charge transport material, blocker material or light-scattering material in electronic, optoelectronic or electroluminescent components.
    Type: Application
    Filed: December 14, 2009
    Publication date: December 22, 2011
    Applicant: NOVALED AG
    Inventors: Olaf Zeika, Horst Hartmann, Ulrich Heggemann, Sascha Dorok, Jan Blochwitz-Nimoth, Ansgar Werner, Michael Hofmann, Carsten Rothe
  • Patent number: 7911129
    Abstract: The invention relates to an arrangement for an organic pin-type light-emitting diode with an electrode and a counter-electrode and a stack with organic layers between the electrode and the counter-electrode, where the stack with the organic layers comprises an emission layer comprising a k (k=1, 2, 3, . . . ) organic matrix materials, a doped charge carrier transport layer, which is arranged between the electrode and the emission layer, a further doped charge carrier transport layer, which is arranged between the counter-electrode and the emission layer, and one block layer, which is arranged between one of the doped charge carrier transport layers and the emission layer. The organic layers of the stack are formed by means of n (n?k+2) organic matrix materials, where the n organic matrix materials comprise the k organic matrix materials of the emission layer.
    Type: Grant
    Filed: April 12, 2006
    Date of Patent: March 22, 2011
    Assignee: Novaled AG
    Inventors: Michael Hofmann, Jan Birnstock, Jan Blochwitz-Nimoth, Ansgar Werner, Martin Pfeiffer, Kentaro Harada
  • Publication number: 20100065825
    Abstract: The invention relates to a light-emitting device, in particular a light-emitting diode, with an arrangement of layers on a substrate, wherein the arrangement of layers has an anode contact and a cathode contact which are in electrical contact with a light-emitting layer stack arranged between the anode contact and the cathode contact which, on its part, comprises a polymer layer consisting of a polymer material and a low-molecular layer of vacuum-deposited small molecules of an organic material, and wherein the small molecules of the low-molecular layer are formed as donor molecules with an oxidation potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of maximum approx. ?1.5 V, if the low-molecular layer is arranged adjacent to the cathode contact, and as acceptor molecules with a reduction potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of minimum approx. ?0.3 V if the low-molecular layer is arranged adjacent to the anode contact.
    Type: Application
    Filed: April 13, 2007
    Publication date: March 18, 2010
    Applicant: NOVALED AG
    Inventors: Jan Birnstock, Jan Blochwitz-Nimoth
  • Publication number: 20100026176
    Abstract: The presently described subject matter relates to transparent and thermally stable light-emitting components having organic layers, and in particular to a transparent organic light-emitting diode having a charge carrier transport layer which is electrically doped with an organic dopant.
    Type: Application
    Filed: July 31, 2009
    Publication date: February 4, 2010
    Inventors: Jan Blochwitz-Nomith, Karl Leo, Martin Pfeiffer, Xiang Zhou
  • Publication number: 20090179189
    Abstract: The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and a second material, wherein the composite layer structure is provided as a stack of at least three non-mixed sub-layers made of the first material and the second material, respectively, wherein within the stack of the at least three non-mixed sub-layers each first material sub-layer is followed by an adjacent second material sub-layer and each second material sub-layer is followed by an adjacent first material sub-layer, and wherein the first material and the second material are selected to form a host-dopant material system for the electrical doping. The invention also relates to an electronic device.
    Type: Application
    Filed: October 23, 2006
    Publication date: July 16, 2009
    Applicant: NOVALED AG
    Inventors: Ansgar Werner, Jan Blochwitz-Nimoth, Tobias Canzler
  • Patent number: 7540978
    Abstract: The present invention relates to use of an organic matrix material for producing an organic semiconductor material, characterized in that the organic matrix material is comprised at least partly of a spirobifluorene compound, and the glass transition temperature of the organic matrix material is at least 120° C. and the highest occupied molecular orbital (HOMO) of the matrix material is at a maximum energy level of 5.4 eV; and also to an organic semiconductor material and electronic component.
    Type: Grant
    Filed: August 3, 2005
    Date of Patent: June 2, 2009
    Assignee: Novaled AG
    Inventors: Martin Pfeiffer, Jan Blochwitz-Nimoth, Andrea Lux, Josef Salbeck
  • Patent number: RE43319
    Abstract: A light-emitting component comprising organic layers and having several layers between a base contact and a cover contact, the corresponding process for its preparation. At least one polymer layer and two molecular layers are arranged, so that when the cover contact is a cathode, the layer adjacent to the cover contact is designed as an electron-transporting molecular layer and is doped with an organic or inorganic donor, the electron-transporting layer comprising a principal organic substance and a donor-type doping substance, the molecular weight of the dopant being more than 200 g/mole. When the cover contact is an anode, the layer adjacent to the cover contact is designed as a p-doped hole-transporting molecular layer and is doped with an organic or inorganic acceptor, the hole-transporting layer comprising a principal organic substance and an acceptor-like doping substance, the molecular weight of the dopant being more than 200 g/mole.
    Type: Grant
    Filed: November 4, 2009
    Date of Patent: April 24, 2012
    Assignee: Novaled AG
    Inventors: Jan Blochwitz-Nimoth, Gildas Sorin