Layer assembly for a light-emitting component

- Novaled AG

The invention relates to a layer assembly for a light-emitting component, in particular a phosphorescent organic light-emitting diode, having a hole-injecting contact and an electron-injecting contact which are each connected to a light-emitting region, wherein, in the light-emitting region, one light-emitting layer is made up of a material (M1) and another light-emitting layer is made up of another material (M2), where the material (M1) is ambipolar and preferentially transports holes and the other material (M2) is ambipolar and preferentially transports electrons; a heterotransition is formed by the material (M1) and the other material (M2) in the light-emitting region; an interface between the material (M1) and the other material (M2) is of the staggered type II; the material (M1) and the other material (M2) each contain an appropriate addition of one or more triplet emitter dopants; and an energy barrier for transfer of holes from the material (M1) into the other material (M2) and an energy barrier for transfer of electrons from the other material (M2) into the material (M1) are each less than about 0.4 eV.

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Description
CROSS-REFERENCE TO RELATED APPLICATION

This is a submission pursuant to 35 U.S.C. 154(d)(4) to enter the national stage under 35 U.S.C. 371 for PCT/DE2005/001076 filed Jun. 16, 2005. Priority is claimed under 35 U.S.C. 119(a) and 35 U.S.C. 365(b) to German Patent Application No. 10 2004 039594.2 filed Aug. 13, 2004 and European Patent Application 04019276.7 filed Aug. 13, 2004. The subject matters of PCT/DE2005/001076, German Patent Application No. 10 2004 039594.2 and European Patent Application 04019276.7 are hereby expressly incorporated herein by reference.

The invention relates to a layer assembly for a light-emitting component, in particular an organic phosphorescent light-emitting diode (OLED).

PRIOR ART

A component having an assembly of organic layers is described, for example, in the document WO 03/100880.

Typical realizations of such components, as have been reported, for example, by Baldo et al. (Appl. Phys. Lett., 75 (1), 4-6 (1999) or Ikai et al. (Appl. Phys. Lett., 79 (2), 156-158 (2001)), are based on a simple light-emitting layer (EML) which comprises a mixture of a matrix material and a phosphorescence dopant. If this has, as described in the studies of Baldo et al. (EML comprising CBP (4,4′-N,N′-dicarbazolylbiphenyl or 4,4′-bis(carbazol-9-ylbiphenyl)) doped with Ir(ppy)3 (fac tris(2-phenylpyridine)iridium)) and Ikai et al. (EML comprising TCTA (4,4′,4″-tris(N-carbazolyl)triphenylamine) doped with Ir(ppy)3) predominantly hole-transporting character, a hole-blocking layer (HBL) composed of a material having a very high ionization energy, namely BCP (bathocuproin, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) in the case of Baldo et al. and a perfluorinated starburst material in the case of Ikai et al., is required between the emission layer and an electron transport layer or the cathode.

On the other hand, if the EML has predominantly electron-conducting character, as in a realization of Adachi et al. (Appl. Phys., 90 (10), 5048-5051 (2001)) where the EML comprises an electron transport material TAZ (a derivative of 1,2,4-triazole, for example 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole), doped with an Ir complex as emitter dopant, an electron-blocking layer (EBL) composed of a material having a very low electron affinity is required, for which Adachi et al. use 4,4′-bis[N,N′-(3-tolyl)amino]-3,3′-dimethylbiphenyl (HM-TPD). However, this results in the problem that, especially in the case of high luminances, accumulation of holes/electrons at the hole-/electron-blocking layer occurs, which leads to a drop in the efficiency with increased luminance.

A further problem is that the charge carrier accumulation accelerates degradation of the OLED. In addition, good hole-blocking materials are often electrochemically unstable. This is true, for example, for the use of the widespread materials bathocuproin (BCP), bathophenanthroline (BPhen) and 2,2′,2″-(1,3,5-benzenetriyl)tris[1-phenyl-1H-benzimidazole (TPBI) as hole-blocking materials (cf. Kwong et al., Appl. Phys. Lett., 81, 162 (2002)).

In the document WO 03/100880, ambipolar light-emitting layers (EML) EML1 and EML2 are used as follows in a layer assembly for an organic phosphorescent light-emitting diode: anode=ITO/hole-transporting layer (HTL) 1=F4-TCNQ doped with MeO-TPD/HTL 2=spiro-TAD/EML1=TCTA:Ir(ppy)3/EML2=BPhen:Ir(ppy)3/electron-transporting layer (ETL) ETL2=BPhen/ETL1=BPhen:Cs-doped/cathode=Al. The barrier for electron injection from EML2 into EML1 is in this case about 0.5 eV.

An organic phosphorescent light-emitting diode is also disclosed in the document WO 02/071813 A1. In the known light-emitting diode, a light-emitting region having two emission layers with hole transporters/electron transporters which are each doped with the same triplet emitter dopant.

The known components suffer from the problem that the energy barrier between the hole-transporting material and the electron-transporting material is high, so that an accumulation of charge carriers occurs in the light-emitting region, which leads to a high probability of the quenching of excitons by charge carriers (triplet-polaron quenching). In addition, the generation of excitons occurs essentially at the interface between the hole-transporting part and the electron-transporting part of the component. For this reason, a high local triplet exciton density occurs in this region, which results in a high probability of triplet-triplet annihilation. The triplet-polaron quenching and the triplet-triplet annihilation lead to a drop in the quantum efficiency at relatively high current densities.

THE INVENTION

It is an object of the invention to provide a layer assembly for a light-emitting component, in particular a phosphorescent organic light-emitting diode, having improved light-emitting properties, in particular an improved quantum yield of the phosphorescence at high luminances, and an increased life.

This object is achieved according to the invention by a layer assembly for a light-emitting component according to the independent Claim 1. Advantageous embodiments of the invention are subject-matter of dependent subordinate claims.

The invention is based on the idea of providing at least two ambipolar layers of which one preferentially transports electrons and one other preferentially transports holes, in the light-emitting region of the layer assembly, also referred to as emission zone.

Preferential transport of one type of charge carriers, namely electrons or holes, occurs in a layer of the light-emitting component if the charge carrier mobility for this type of charge carriers in the layer is greater than the charge carrier mobility for the other type of charge carriers and/or if the injection barrier for this type of charge carriers is lower than the injection barrier for the other type of charge carriers.

A heterotransition is referred to as a staggered heterotransition, also referred to as a heterotransition of the “staggered type II” between an organic material (M1) and another organic material (M2) when the material which preferentially transports holes (M1) has both a lower ionization energy and a lower electron affinity than the other material which preferentially transports electrons (M2), which means that both the highest occupied orbital (HOMO) and the lowest unoccupied orbital (LUMO) for the material (M1) are closer to the vacuum level than is the case for the other material (M2). This results in an energy barrier for injection of holes from the material (M1) into the other material (M2) and an energy barrier for injection of electrons from the other material (M2) into the material (M1).

A layer based on an organic material is an ambipolar layer for the purposes of the present application when the electron mobility and the hole mobility in the layer differ by less than about two orders of magnitude and the organic material of the ambipolar layer is reversibly reducible and oxidizable, which is based on electrochemical stability of the radical anion and of the radical cation of the organic material.

The ambipolar property can preferably be made more pronounced by a hole transport level (HOMO—“highest occupied molecular orbital”) being not more than about 0.4 eV, preferably not more than about 0.3 eV, below the hole transport level of customary hole transport materials in order to make hole injection possible. A customary hole transport material is, for example, N,N′-di(naphthalen-2-yl)-N,N′-diphenyl-benzidine (NPD). A HOMO energy which is from about 5.5 eV to about 5.7 eV below the vacuum level is reported for the reference material NPD.

In addition to or as an alternative to the abovementioned property involving the HOMO energy, the ambipolar property is produced by the electron transport level of the organic material of the ambipolar layer being not more than about 0.4 eV, preferably not more than about 0.3 eV, above the electron transport level of customary electron transport materials, for example Alq3. This criterion can be checked by means of methods of estimating the LUMO energy (LUMO—“lowest unoccupied molecular orbital”), which are known per se to those skilled in the art. These include, in particular:

  • a) Measurement of the ionization energy (IP), for example by means of photoelectron spectroscopy, and the optical absorption edge Egopt and estimation of the LUMO energy in a vacuum as IP-Egopt. In the case of Alq3, LUMO energy levels which are from about 2.9 eV to about 3.1 eV below the vacuum level are obtained.
  • b) Electrochemical determination of the potential for the first reduction. Here, the potential of Alq3 is found to be −2.3 V relative to ferrocene/ferrocene+, which corresponds to an electron affinity of about 2.5 eV.
  • c) Determination of the LUMO energy level of the organic material used for the ambipolar layer in the case of Alq3 by examination of the barrier to electron transport across the interface to Alq3.

An organic layer having ambipolar properties can be obtained, for example, as follows:

  • i) A unipolar organic matrix material is used together with an emitter material having complementary transport properties. For example, the emitter material is hole-transporting when the matrix material is electron-transporting, or vice versa. In this embodiment, the ratio of hole mobility and electron mobility can be set by means of the dopant concentration in the emitter material. A matrix composed of a unipolar hole-transporting matrix material is referred to as a “hole-only” matrix, while an “electron-only” matrix is a matrix composed of a unipolar electron-transporting matrix material.
  • ii) An ambipolar matrix material can be used.
  • iii) In a further embodiment, a mixture of two matrix materials and an emitter material is used, with one of the matrix materials being hole-transporting and the other matrix material being electron-transporting. The ratio of hole mobility and electron mobility can be set by means of the mixing ratios. The molecular mixing ratios are in the range from 1:10 to 10:1.

The invention has the advantage over the prior art that the assembly composed of a plurality of layers in the light-emitting region has a self-balancing character in respect of the required balance of electron injection and hole injection. The accumulation of charge carriers at interfaces is avoided, both at the interface to the adjoining transport or blocking layers, which is, in particular, an advantage over the known light-emitting component of Adachi et al. (Appl. Phys., 90 (10), 5048-5051 (2001)), and also at the internal interface between the layers in the light-emitting region, which results in an advantage over, in particular, the prior art from the document WO 02/071813 A1. As a result, a very wide overlap zone of the injected electron and hole distributions in the light-emitting region of the layer assembly and thus a wide generation zone for excited states (excitons) are formed. Both degradation processes owing to high local charge carrier densities and efficiency-reducing quenching processes between charge carriers and excitons and between excitons are minimized in this way.

It is possible for the light-emitting region to have more than two light-emitting layers, as is described in the document WO 03/100880, whose contents are hereby incorporated by reference into the present patent application.

The triplet emitter dopants for the light-emitting layers can be identical or different.

The charge carrier transport layers and/or the hole- or electron-blocking layer can be omitted on the electron side and/or the hole side, so that the light-emitting layers directly adjoin the contacts (anode, cathode) or the (doped) charge carrier transport layers in the light-emitting region of the layer assembly. This is made possible by the self-balancing character of the layer system in the emission zone, since otherwise excitons would be quenched at the metal contact or on contact with dopants or the charge carriers could flow transversely through the OLED and recombine without emitting radiation at the other contact or at the doped transport layer.

EXAMPLES

The invention is illustrated below with the aid of examples with reference to figures of the drawing. Here;

FIG. 1 shows a graph of current efficiency and power efficiency as a function of the luminance for a first embodiment of a light-emitting component;

FIG. 2 shows a graph of the power efficiency as a function of the luminance for a second embodiment of a light-emitting component;

FIG. 3 shows a graph of the power efficiency as a function of the luminance for a fourth embodiment of a light-emitting component;

FIG. 4 shows a dyad made up of a spiro-linked molecule of CBP and a TAZ unit (such molecules will hereinafter be referred to as DADs=donor-acceptor dyads);

FIG. 5 schematically shows the energy levels for a) a simple material having a contiguous π electron system, for b) subunits D (donor subunit) and A (acceptor subunit) of a DAD in which at least one of the energy differences between HOMO levels or LUMO levels of the subunits is so small that the lowest singlet excited state is a Frenkel exciton on one of the subunits, and for c) subunits D and A of a DAD in which at least one of the energy differences between HOMO levels or LUMO levels of the subunits is so large that the lowest singlet excited state is a charge transfer exciton consisting of an electron on the subunit A and a hole on the subunit D;

FIG. 6 schematically shows an energy level diagram for an example in which a material (M1) for one of the layers EML1 in the emission zone comprises a bipolar, single-component material and another material (M2) for another of the layers EML2 in the emission zone comprises an electron-only matrix and a hole-transporting emitter dopant; the broken lines represent the energy levels of the emitter dopants.

FIG. 7 schematically shows an energy level diagram for an example in which the material (M1) for one of the layers (EML1) in the emission zone comprises a mixture of a hole-transporting material, an electron-transporting material and a triplet emitter dopant and the other material (M2) for another of the layers EML2 in the emission zone comprises an electron-only matrix;

FIG. 8 schematically shows an energy level diagram for an example in which the material (M1) for one of the layers EML1 in the emission zone comprises a hole-only matrix, in which electron transport can occur by hopping between dopant states, and the other material (M2) for another of the layers EML2 in the emission zone comprises an ambipolar, single-component material;

FIG. 9 schematically shows an energy level diagram for an example in which the material (M1) for one of the layers EML1 in the emission zone comprises a hole-only matrix, in which electron transport can occur by hopping between dopant states, and the other material (M2) for another of the layers EML2 in the emission zone comprises a mixture of a hole-transporting material, an electron-transporting material and a triplet emitter dopant;

FIG. 10 schematically shows an energy level diagram for an example in which the material (M1) for one of the layers EML1 in the emission zone and the other material (M2) for another of the layers EML2 in the emission zone are each composed of a single-component, ambipolar material or a mixture comprising a hole-transporting material and an electron-transporting material;

FIG. 11 schematically shows an energy level diagram for an example in which hole transport in the material (M1) for the layer EML1 in the emission zone and the other material (M2) for the layer EML2 in the emission zone takes place by hopping between states of the triplet emitter dopant (the greater hole mobility in M1 compared to M2 is here due to the smaller distance in energy terms to the hole transport level of the matrix, so that tunnelling between dopant states in M1 is made easier); and

FIG. 12 schematically shows an energy level diagram for an example in which electron transport in the material (M1) for the layer EML1 in the emission zone and the other material (M2) for the layer EML2 in the emission zone takes place by hopping between states of the triplet emitter dopant (the greater electron mobility in M2 compared to M1 is here due to the smaller distance in energy terms to the electron transport level of the matrix, so that tunnelling between dopant states in M2 is made easier).

In the following description of examples, the following abbreviations are used: HTL—hole-transporting layer, ETL—electron-transporting layer, EML—layer in the light-emitting region, EBL—electron-blocking layer and HBL—hole-blocking layer.

Example 1

In a first example, the following layer assembly is provided for a light-emitting component:

Anode=ITO/

HTL1=F4-TCNQ (tetrafluorotetracyanoquinodimethane) doped into N,N,N′,N′-tetrakis(4-methoxyphenyl)benzidine (MeO-TPD) at a mixing ratio of from 0.1 mol % to 10 mol % and a layer thickness of from about 30 nm to about 500 nm, preferably from about 50 nm to about 200 nm/

HTL2=2,2′,7,7′-tetrakis(N,N-diphenylamino)-9,9′-spirobifluorene (spiro-TAD) having a layer thickness of from about 1 nm to about 30 nm, preferably from 3 nm to 15 nm, with HTL2 preferably being thinner than HTL1/

EML1=TCTA:Ir(ppy)3 having a concentration of Ir(ppy)3 of from about 1 mol % to about 50 mol %, preferably from about 3 to about 30 mol %, and a layer thickness of from about 2 nm to about 30 nm, preferably from about 3 nm to about 15 nm/

EML2=TPBI:Ir(ppy)3 having a concentration of Ir(ppy)3 of from about 1 mol % to about 50 mol %, preferably from about 3 to about 30 mol %, and a layer thickness of from about 2 nm to about 30 nm, preferably from about 3 nm to about 15 nm/

ETL2=bis(2-methyl-8-quinolinolato)-4-(phenylphenolato)aluminium(III) (BAlq2) having a layer thickness of from about 1 nm to about 30 nm, preferably from about 3 nm to about 15 nm, with ETL2 preferably being thinner than ETL1. Comparable characteristics are obtained using BPhen instead of BAlq2 as ETL2.

ETL1=BPhen:Cs-doped with a Cs concentration of from about 0.1 mol % to a molar ratio of 1:1 and a layer thickness of from about 30 nm to about 500 nm, preferably from about 50 nm to about 200 nm/

cathode=A1.

Electron transport in EML1 can optionally be aided by this layer being made up of a mixture of the three components TCTA, TPBI and Ir(ppy)3, for example at a mixing ratio of 46%/46%/8%. The barrier to injection of electrons from EML2 into EML1 is in this case less than about 0.3 eV. The barrier to injection of holes from EML1 into EML2 is about 0 eV, since hole transport in EML1 and EML2 takes place as hopping to Ir(ppy)3, or can even be negative when a hole goes from a TCTA state to an Ir(ppy)3 state in EML2. The incorporation of the redox dopants, for example acceptors such as F4-TCNQ or donors such as Cs, and the emitter dopants, namely Ir(ppy)3 in the example, can, for example, be carried out by means of mixing vaporization from two separately controllable thermal sublimation sources under reduced pressure or by means of other suitable methods such as successive application of the materials, for example by means of vaporization under reduced pressure, and subsequent diffusion into one another, if appropriate aided by a specific temperature-time profile.

The ambipolarity of EML2 is, in the first example, achieved by means of the hole transport property of Ir(ppy)3 in the electron transport materials TPBI and BPhen. A little TCTA can optionally be mixed into the EML2 in order to aid hole transport, but the TCTA concentration in EML2 should always be less than that in EML1.

Example 2

A second example has a structure like Example 1 above, except that ETL2 is made up of Alq3:anode=ITO/HTL1=F4-TCNQ-doped MeO-TPD/HTL2=spiro-TAD/EML1=TCTA:Ir(ppy)3/EML2=TPBI:Ir(ppy)3/ETL2=Alq3/ETL1=BPhen:Cs-doped/cathode=Al. This example demonstrates the self-balancing aspect of the structure which makes it possible, if desired, to dispense with hole- and/or electron-blocking layers entirely. Alq3 has no hole-blocking action, but is more stable than the typical hole-blocking materials such as BCP. In this example, Alq3 aids electron injection from BPhen:Cs into EML2.

Example 3

In a third example, the structure is simplified by neither an electron-blocking layer nor a hole-blocking layer being provided, but in this case it is possible to omit only one of the blocking layers:

anode=ITO/HTL1=F4-TCNQ-doped MeO-TPD/EML1=TCTA:Ir(ppy)3/EML2=TPBI:Ir(ppy)3/ETL1=BPhen:Cs-doped/cathode=Al.

Example 4

An example which constitutes a modification of Example 3 has the following structure: anode=ITO/HTL1=F4-TCNQ-doped MeO-TPD/HTL2=spiro-TAD/EML1=TCTA:Ir(ppy)3/EML2=TPBI:Ir(ppy)3/ETL1=BPhen:Cs-doped/cathode=Al.

FIG. 3 shows experimental results for the power efficiency as a function of the luminance for the fourth example (triangles) and the fifth example (circles).

The above-described examples have p-i-n structures, which means that acceptors are incorporated in the hole transport layer and donors are incorporated in the electron transport layer. If the donors in the electron transport layers ETL1, ETL2 are omitted, a p-i-i structure is obtained. If the acceptors in the hole transport layers HTL1, HTL2 are omitted, an i-i-n structure is formed. When donors and acceptors are omitted, an i-i-i structure is formed. All structures can be combined with the above-described structures of EML1 and EML2 in the emission zone.

Example 5

A further example provides a light-emitting component comprising a layer assembly comprising a hole-injecting contact, optionally one or more hole-injecting and hole-transporting layers, a light-emitting region, optionally one or more electron-injecting and electron-transporting layers and an electron-injecting contact, where:

    • at least one layer in the light-emitting region is made up of a mixture of a matrix material with a phosphorescence emitter dopant,
    • the matrix material is a covalently coupled dyad made up of a bipolar or electron-transporting structure and a bipolar or hole-transporting structure, and
    • the dyad material comprises subunits having separate π electron systems.

This light-emitting component of Example 5 is preferably made up so that one of the subunits of the dyad can preferentially take up additional holes so that one HOMO wave function concentrates on the one of the two subunits and that another of the subunits of the dyad can preferentially take up additional electrons so that the LUMO wave function concentrates on this (donor-acceptor dyad).

Such an ambipolarity of the transport in the light-emitting region also leads to an improvement, since ambipolarity generally widens the generation zone and is no longer concentrated exclusively in the immediate vicinity of an interface. This applies particularly when the charge carrier mobilities are set independently of one another in a material in order to achieve very balanced conditions and thus preferred generation in the middle of the EML. This is achieved by the use of donor-acceptor dyads (DADs) made up of two parts having complementary transport characteristics, since the subunits can be optimized individually for electron transport and hole transport.

In addition, the use of dyads has the following advantages in terms of the efficiency of phosphorescent OLEDs. A low operating voltage is desirable in principle for OLEDs. The energy of a charge carrier pair in the transport material (matrix) of the emission zone should ideally be a little greater than the triplet energy of the phosphorescence dopant. At the same time, the lowest triplet level of the transport materials in the emission zone has to have a higher energy than the triplet level of the emitter dopant, since otherwise the triplet exciton of the emitter is quenched by the matrix material. These two requirements are contradictory insofar as the triplet energy is generally significantly lower than the singlet energy (optical energy gap) or the energy of the free charge carrier pair (electric energy gap) due to exchange interaction. Here, the difference between singlet energy and triplet energy correlates with the spatial overlap of HOMO and LUMO. The difference in the case of dyads in which the HOMO is restricted to a different subunit than the LUMO is thus negligibly small. If the difference between the HOMO energies and also between the LUMO energies of the subunits is sufficiently large, the lowest singlet excited state of the DAD is a charge transfer exciton which has a lower exciton binding energy than a molecular Frenkel exciton, so that optical and electric energy gaps also move closer together. Overall, the difference between the electric energy gap of the matrix and the triplet energy of the phosphorescence dopant can thus be significantly reduced when using DADs compared to materials having HOMOs and LUMOs which have a large overlap.

A possible realization of such a DAD is a spiro-linked molecule made up of CBP and a TAZ unit, as shown in FIG. 4. The electric energy gap is produced by the HOMO of CBP and the LUMO of TAZ, while the lowest singlet and triplet excited states correspond to the values of the two components.

Energy Level Diagrams

Energy level diagrams for various embodiments which include the above-described examples at least in part and also further embodiments are described below with reference to FIGS. 5 to 12.

FIG. 5 schematically shows the energy levels for a) a simple material having a contiguous π electron system, for b) subunits D (donor subunit) and A (acceptor subunit) of a DAD in which at least one of the energy differences between HOMO levels or LUMO levels of the subunits is so small, preferably less than about 0.5 eV, that the lowest singlet excited state is a Frenkel exciton on one of the subunits, and for c) subunits D (donor subunit) and A (acceptor subunit) of a DAD in which at least one of the energy differences between HOMO levels or LUMO levels of the subunits is so large, preferably greater than about 0.4 eV, that the lowest singlet excited state is a charge transfer exciton consisting of an electron on the subunit A and a hole on the subunit D.

The example of FIG. 5c) describes an energetically optimal situation which leads to minimal operating voltages. However, to improve the efficiency of energy transfer or to avoid quenching processes for charge-transfer excitons, which often lead to considerable vibronic relaxation processes, it can be useful to go over to the energetically less optimal situation which is defined in FIG. 5b) and in which the lowest excited state is a Frenkel exciton on one of the subunits, since one of the energy differences (“offset”) is smaller than the binding energy of Frenkel excitons. An advantage in respect of the operating voltage compared to simple materials having a high spatial HOMO-LUMO overlap is nevertheless retained: although the difference between singlet and triplet excitation is not reduced here, optical and electric energy gaps move closer together.

To avoid confusion between single-particle levels and energies of excited states, the levels in FIG. 5 for electrons/holes have been denoted by Ee/Eh. This corresponds essentially to the LUMO/HOMO energies of the subunits, although the term LUMO in particular is not used in a uniform fashion in the literature, while the excitation energies are denoted by Sn or Tn depending on the spin multiplicity. CT denotes the energy of a charge transfer exciton formed by an electrode on the subunit A and a hole on the subunit D, which is largely independent of the spin multiplicity. In cases b) and c) in FIG. 5, the matrix has a smaller electric energy gap (Egel) at the same triplet energy, so that the phosphorescent light-emitting diode can operate at a lower operating voltage.

FIG. 6 schematically shows an energy level diagram for an example in which the material (M1) for one of the layers EML1 in the emission zone comprises an ambipolar, single-component material and the other material (M2) for another of the layers EML2 in the emission zone comprises an electron-only matrix, with hole transport being able to occur by hopping between dopant states.

An upper line denotes the LUMO level, i.e. the respective electron transport level. The bottom line denotes the HOMO level, i.e. the hole transport level. Furthermore, an anode A and a cathode K which are symbolized by their Fermi level are also shown. In the example presented, it is assumed that HTL1 is p-doped and HTL2 is n-doped. The energy levels shown as broken lines in the emission layers EML1 and EML2 in FIG. 6 symbolize the levels of the emitter dopants. Arrows 60, 61 indicate the energy level on which charge carrier transport takes place. Arrows 62, 63 indicate the preferred transport type of a material system. The energetic arrangement of the HOMO energy level and the LUMO energy level in the EMLs is important, and it is also important that the HOMO offset between HTL2 and EML1 and the LUMO offset between ETL2 and EML2 are not too great. This offset is preferably less than about 0.5 eV, more preferably less than about 0.3 eV.

FIG. 7 schematically shows an energy level diagram for an example in which the material (M1) for one of the layers EML1 in the emission zone comprises a mixture of a hole-transporting material, an electron-transporting material and a triplet emitter dopant and the other material (M2) for another of the layers EML2 in the emission zone comprises an electron-only matrix, with hole transport being able to occur by hopping between dopant states. The dotted lines denote the energy levels of the emitter dopant. The stroke-dot line denotes the energy level of an electron transport component in EML1. Finally, the continuous line in EML1 denotes the energy level of the hole transport component.

FIG. 8 schematically shows an energy level diagram for an example in which the material (M1) for one of the layers EML1 in the emission zone comprises a hole-only matrix, with electron transport being able to occur by hopping between dopant states, and the other material (M2) for another of the layers EML2 in the emission zone comprises an ambipolar, single-component material.

FIG. 9 schematically shows an energy level diagram for an example in which the material (M1) for one of the layers EML1 in the emission zone comprises a hole-only matrix, with electron transport being able to occur by hopping between dopant states, and the other material (M2) for another of the layers EML2 in the emission zone comprises a mixture of a hole-transporting material, an electron-transporting material and a triplet emitter dopant. The broken lines once again denote the energy level of the triplet emitter dopant. The stroke-dot lines in FIG. 9 denote the energy levels of the electron transport component in the layer EML2. Finally, the continuous line in the layer EML2 denotes the energy level of the hole transport component.

FIG. 10 schematically shows an energy level diagram for an example in which the material (M1) for one of the layers EML1 in the emission zone and the other material (M2) for another of the layers EML2 in the emission zone are each made up of a single-component, ambipolar material or a mixture of a hole-transporting material and an electron-transporting material. Only the energy levels which are important for transport are shown for the transport materials in the layers EML1 and EML2; the nonparticipating energy levels in the case of mixed materials are not shown.

FIG. 11 schematically shows an energy level diagram for an example in which hole transport in both the materials (M1) and (M2) for the layers EML1, EML2 in the emission zone takes place by hopping between states of the triplet emitter dopant, with a HOMO level of a matrix material in the material (M1) being closer to a HOMO level of the triplet emitter dopant than in the other material (M2), so that a tunnelling barrier for hopping between the triplet emitter dopants in the material (M1) in EML1 is smaller than a tunnelling barrier for hopping between the dopants in the other material (M2) in EML2 and the effective hole mobility in the material (M1) is greater than the effective hole mobility in the other material (M2).

Only the energy levels which are important for transport are shown for the transport materials in the layers EML1 and EML2; the nonparticipating energy levels in the case of mixed materials are not shown. The energy levels are arranged similarly to the energy levels in the example corresponding to FIG. 6, with the difference being that hole transport by hopping between the triplet emitter dopants in the layer EML1 is now assumed. Whether transport occurs by hopping between triplet emitter dopants or as transport in the matrix with the dopants as traps depends both on the dopant concentration and on the trap depth, which is the energy difference between the HOMO energy level of the matrix and the HOMO energy level of the triplet emitter dopants.

FIG. 12 shows an energy level diagram for an example in which electron transport in the material (M1) for the layer EML1 takes place in the emission zone and that in the other material (M2) for the layer EML2 in the emission zone takes place by hopping between states of the triplet emitter dopant, with a LUMO level of a matrix material in the other material (M2) being closer to a LUMO level of the triplet emitter dopant than in the material (M1), so that a tunnelling barrier for hopping of electrons between the triplet emitter dopants in the other material (M2) is smaller than a tunnelling barrier for hopping between the dopants in the material (M1) and the effective electron mobility in the other material (M2) is greater than the effective electron mobility in the material (M1).

Only the energy levels important for transport are shown for the transport materials in the layers EML1 and EML2 in FIG. 12; the nonparticipating energy levels in the case of mixed materials are not shown. The energy levels are arranged similarly to the example in FIG. 9, with the difference being that electron transport in the layer EML2 now occurs by means of direct hopping between the dopants.

Further Examples of Materials

Further examples of materials which can be employed in the various embodiments described are given below.

In the examples described, the following materials can be used as preferentially or exclusively hole-transporting matrix materials in the emission zone:

  • 1) A molecule comprising triarylamine units, in particular derivatives of TPD, NPD or their spiro-liked dyads (spiro linkage is described, for example, in the document U.S. Pat. No. 5,840,217), derivatives of TDATA such as m-MTDATA, TNATA, etc., or derivatives of TDAB (cf. Y. Shirota, J. Mater. Chem., 10 (1), 1-25 (2000)).
    • TDAB:

      • Starburst=TDAB
    • 1,3,5-tris(diphenylamino)benzene
    • Further aromatic amines are described in the documents US 2002/098379 and U.S. Pat. No. 6,406,804.
  • 2) A molecule comprising thiophene units.
  • 3) A molecule comprising phenylene-vinylene units.

The following components can be used as preferentially or exclusively electron-transporting matrix materials for the layers EML in the emission zone:

  • 1) Oxadiazoles
    • OXD:

  • 2) Triazoles
    • TAZ:

  • 3) Benzothiadiazoles

  • 4) Benzimidazoles

in particular N-arylbenzimidazoles such as TPBI

  • 5) Bipyridines

  • 6) Molecules having cyanovinyl groups (cf. K. Naito, M. Sakurai, S. Egusa J. Phys. Chem. A, 101, 2350 (1997)), in particular 7- or 8-cyano-para-phenylene-vinylene derivatives

  • 7) Quinolines

  • 8) Quinoxalines (cf. M. Redecker, D. D. C. Bradley, M. Jandke, P. Strohriegl, Appl. Phys. Lett., 75 (1), 109-111 (1999))

  • 9) Triarylboryl derivatives (cf. Y. Shirota, J. Mater. Chem., 10 (1), 1-25 (2000))

  • 10) Silol derivatives, in particular derivatives of silacyclopentadiene, for example 2,5-bis-(2(′),2(′)bipyridin-6-yl)-1,1-dimethyl-3,4-diphenylsilacyclopentadiene
    • (PyPySPyPy)


or

    • 1,2-bis(1-methyl-2,3,4,5-tetraphenylsilacyclopentadienyl)ethane
    • (2PSP)


(cf. H. Murata, Z. H. Kafafi, M. Uchida, Appl. Phys. Lett., 80 (2), 189-191 (2002))

  • 11) Cyclooctatetraenes (cf. P. Lu, H. P. Hong, G. P. Cai, P. Djurovich, W. P. Weber, M. E. Thompson, J. Amer. Chem. Soc., 122 (31), 7480-7486 (2000))

  • 12) Quinoid structures, including quinoidal thiophene derivatives
  • 13) Pyrazolines


(cf Z. M. Zhang, R. F. Zhang, F. Wu, Y. G. Ma, G. W. Li, W. J. Tian, J. C. Shen, Chin. Phys. Lett., 17 (6), 454-456 (2000))

  • 14) Other heterocyclic compounds having at least one nitrogen atom or an oxygen atom as heteroatom.
  • 15) Ketones
  • 16) Cyclopentadienyl-based free-radical electron transporters, in particular derivatives of pentaarylcyclopentadiene (cf. U.S. Pat. No. 5,811,833)

  • 17) Benzothiadiazoles (cf. R. Pacios, D. D. C. Bradley, Synth. Met., 127 (1-3), 261-265 (2002))

  • 18) Naphthalenedicarboxylic anhydrides

  • 19) Naphthalenedicarboximides


and naphthalenedicarboximidazoles

  • 20) Perfluorinated oligo-para-phenyls (cf. A. J. Campbell, D. D. C. Bradley, H. Antoniadis, Appl. Phys. Lett., 79 (14), 2133-2135 (2001))

Further possible structural units which promote electron transport are described in the document US 20002/098379.

In a further embodiment of the light-emitting component, the bipolar, single-component material belongs to one of the following classes of materials:

  • 1) Covalently coupled dyads made up of a bipolar or electron-transporting structure and a bipolar or hole-transporting structure, with the substructures having separate π electron systems.
    • Such structures have been realized, for example, as a spiro linkage of a donor unit and an acceptor unit (cf., for example, DE 44 46 818 A1, R. Pudzich, J. Salbeck, Synthet. Metal., 138, 21 (2003) and T. P. I. Saragi, R. Pudzich, T. Fuhrmann, J. Salbeck, Appl. Phys. Lett., 84, 2334 (2004)). The focus of the studies of Pudzich and Salbeck was the combination of the functions of charge carrier transport and efficient emission in one molecule and the realization of light-sensitive transistors. A possible particularly advantageous use of such compounds as matrix for phosphorescence emitter dopants as a result of the favourable relationship between the electrical band gap and the lowest triplet level is not mentioned by the authors.
    • Dyads comprising electron-conducting and hole-conducting structures are also mentioned in the document U.S. Pat. No. 6,406,804. According to this patent, they are intended to serve as matrix for fluorescent emitter molecules.
  • 2) A molecule which, as a result of suitable structural elements having a common π electron system, comprises firstly subunits which preferentially take up additional holes and on which the HOMO wave function is consequently concentrated and secondly further subunits which preferentially take up additional electrons and on which the LUMO wave function is consequently concentrated (cf., for example, Y. Shirota, M. Kinoshita, T. Noda, K. Okumoto, T. Ohara, J. Amer. Chem. Soc., 122 (44), 11021-11022 (2000) or R. Pudzich, J. Salbeck, Synthet. Metal., 138, 21 (2003)).
  • 3) A push-pull-substituted molecule (a molecule which, as a result of suitable electron-pulling and electron-pushing substituents, has subunits which preferentially take up additional holes and on which the HOMO wave function is consequently concentrated and other subunits which preferentially take up additional electrons and on which the LUMO wave function is consequently concentrated).
  • 4) A molecule comprising carbazole units, in particular CBP.

  • 5) A molecule comprising fluorene units (cf. A. J. Campbell, D. D. C. Bradley, H. Antoniadis, Appl. Phys. Lett., 79 (14), 2133-2135 (2001)).

  • 6) A molecule comprising porphyrin or phthalocyanine units (cf. A. Ioannidis, J. P. Dodelet, J. Phys. Chem. B, 101 (26), 5100-5107 (1997)).
  • 7) A molecule comprising para-oligophenyl having more than three phenyl units coupled in the para positions.

  • 8) A molecule comprising anthracene, tetracene or pentacene units.

  • 9) A molecule comprising perylene.

  • 10) A molecule comprising pyrene.

The features of the invention disclosed in the above description and in the claims can be of importance in their various embodiments either individually or in any combination for the realization of the invention.

Claims

1. A layer assembly for a light-emitting component, comprising a hole-injecting contact and an electron-injecting contact which are each connected to a light-emitting region comprising one light-emitting layer and an other light-emitting layer, wherein:

the one light-emitting layer comprises one material and the other light-emitting layer comprises an other material, wherein the one material is ambipolar and has a charge carrier mobility for holes that is greater than the one material's charge carrier mobility for electrons, and the other material is ambipolar and has a charge carrier mobility for electrons that is greater than the other material's charge carrier mobility for holes; wherein the one material and the other material each comprise one or more triplet emitter dopants; wherein the other material comprises either a single-component ambipolar material or an electron-only matrix, wherein hole transport occurs in the electron-only matrix by hopping between states of the one or more triplet emitter dopants;
a heterotransition is formed by the one material and the other material in the light-emitting region;
an interface between the one material and the other material is of a staggered type II; and
an energy barrier for transfer of holes from the one material into the other material and an energy barrier for transfer of electrons from the other material into the one material are each less than about 0.4 eV.

2. A layer assembly according to claim 1, wherein at least one of the energy barriers for the transfer of holes from the one material into the other material and the transfer of electrons from the other material into the one material is less than about 0.3 eV.

3. A layer assembly according to claim 1, wherein the one material comprises an ambipolar, single-component material, and the other material comprises an electron-only matrix, wherein hole transport occurs by hopping between states of the one or more triplet emitter dopants.

4. A layer assembly according to claim 1 wherein the one material comprises a mixture comprising a material that has a charge carrier mobility for holes that is greater than the material's charge carrier mobility for electrons, a second material that has a charge carrier mobility for electrons that is greater than the second material's charge carrier mobility for holes, and the one or more triplet emitter dopants; and the other material comprises an electron-only matrix, wherein hole transport occurs by hopping between states of the one or more triplet emitter dopants.

5. A layer assembly according to claim 1, wherein hole transport in the one material and the other material takes place as hopping between states of the one or more triplet emitter dopants, wherein a HOMO level of a matrix material is closer to a HOMO level of the one or more triplet emitter dopants in the one material rather than the other material so that a tunnelling barrier for hopping between the states of the one or more triplet emitter dopants in the one material is smaller than a tunnelling barrier for hopping between the states of the one or more triplet emitter dopants in the other material, and the hole mobility in the one material is greater than the hole mobility in the other material.

6. A layer assembly according to claim 1, wherein electron transport in the one material and other material takes place as hopping between states of the one or more triplet emitter dopants, wherein a LUMO level of a matrix material is closer to a LUMO level of the one or more triplet emitter dopants in the other material than in the one material so that a tunnelling barrier for hopping of electrons between the states of the one or more triplet emitter dopants in the other material is smaller than a tunnelling barrier for hopping between the states of the one or more triplet emitter dopants in the one material and the electron mobility in the other material is greater than the electron mobility in the one material.

7. A layer assembly according to claim 1, wherein a matrix material for the one material and/or the other material comprises a covalently coupled dyad comprising an ambipolar or electron-transporting structure and an ambipolar or hole-transporting structure, and the dyad has subunits comprising separate π electron systems.

8. A layer assembly according to claim 7, wherein one of the subunits of the dyad can take up additional holes so that a HOMO wave function is concentrated on this one of the subunits, and another of the subunits of the dyad can take up additional electrons so that the LUMO wave function is concentrated on the other one of the subunits, thus forming a donor-acceptor dyad.

9. A layer assembly according to claim 7, wherein at least one of the energy offsets between HOMO levels or LUMO levels of the subunits is less than about 0.5 eV, wherein the lowest singlet excited state is a Frenkel exciton on one of the subunits.

10. A layer assembly according to claim 7, wherein the energy offset both for the HOMO levels and for the LUMO levels of the subunits is greater than about 0.4 eV, wherein the lowest singlet excited state is a charge transfer exciton consisting of an electron on an acceptor subunit and a hole on a donor subunit.

11. A layer assembly according to claim 8, wherein the one subunit which takes up additional holes comprises a material from one or more of the following classes of materials:

a molecule comprising triarylamine units;
a molecule comprising thiophene units; or
a molecule comprising phenylene-vinylene units.

12. A layer assembly according to claim 8, wherein the other subunit which takes up additional electrons comprises a material from one or more of the following classes of materials:

oxadiazoles;
triazoles;
benzothiadiazoles;
benzimidazoles;
bipyridines;
molecules having cyanovinyl groups;
quinolines;
quinoxalines;
triarylboryl derivatives;
silol derivatives;
cyclooctatetraenes;
quinoid structures;
pyrazolines;
ketones;
cyclopentadienyl-based free-radical electron transporters; or
benzothiadiazoles.

13. A layer assembly according to claim 7, wherein the subunits of the dyad are linked by means of a spiro compound.

14. A layer assembly according to claim 1, comprising at least one layer selected from the group consisting of: an electron transport layer, a hole transport layer, an electron-blocking layer, and a hole-blocking layer.

15. A layer assembly according to any of claim 14, wherein a p-i-i structure is formed.

16. A layer assembly according to claim 14, wherein an i-i-n structure is formed.

17. A layer assembly according to claim 4, wherein the mixture comprising the material with a charge carrier mobility for holes that is greater than the material's charge carrier mobility for electrons, the second material with a charge carrier mobility for electrons that is greater than the second material's charge carrier mobility for holes, and the one or more triplet emitter dopants comprises a material from one or more of the following classes of materials:

a molecule comprising triarylamine units;
a molecule comprising thiophene units; or
a molecule comprising phenylene-vinylene units.

18. A layer assembly according claim 4, wherein the mixture of the material with a charge carrier mobility for holes that is greater than the material's charge carrier mobility for electrons, the second material with a charge carrier mobility for electrons that is greater than the second material's charge carrier mobility for holes, and the one or more triplet emitter dopants, comprises a material from one or more of the following classes of materials:

oxadiazoles;
triazoles;
benzothiadiazoles;
benzimidazoles;
bipyridines;
molecules having cyanovinyl groups;
quinolines;
quinoxalines;
triarylboryl derivatives;
silol derivatives;
cyclooctatetraenes;
quinoid structures;
pyrazolines;
ketones;
cyclopentadienyl-based free-radical electron transporters;
benzothiadiazoles;
naphthalenedicarboxylic anhydrides, naphthalenedicarboximides and naphthalenedicarboximidazoles; or
perfluorinated oligo-para-phenyls.

19. A layer assembly according to claim 3, wherein the ambipolar, single-component material comprises one of the following materials:

covalently coupled dyads comprising a bipolar or electron-transporting structure and a bipolar or hole-transporting structure, wherein the substructures comprise a separate π electron system;
a molecule which, as a result of suitable structural elements having a common π electron system, comprises firstly subunits which take up additional holes and on which the HOMO wave function is consequently concentrated and secondly further subunits which take up additional electrons and on which the LUMO wave function is consequently concentrated;
a push-pull substituted molecule;
a molecule comprising carbazole units;
a molecule comprising fluorene units;
a molecule comprising porphyrin or phthalocyanine units;
a molecule comprising para-oligophenyl having more than three phenyl units coupled in para positions;
a molecule comprising anthracene, tetracene or pentacene units;
a molecule comprising perylene; or
a molecule comprising pyrene.

20. A layer assembly according to claim 1, wherein the one light-emitting layer and the other light-emitting layer each have a layer thickness of less than about 30 nm.

21. A layer assembly according to claim 1, wherein the light-emitting region comprises at least one additional light-emitting layer.

22. A layer assembly according to claim 14, wherein a p-i-n structure is formed.

23. A layer assembly according to claim 14, wherein an energy barrier to injection of holes from an effective hole transport level of the other light-emitting layer into an effective hole transport level of an adjoining electron transport layer is less than about 0.4 eV, so that the adjoining electron transport layer is an inefficient hole-blocking layer, wherein the other light-emitting layer comprises an adjoining electron transport layer.

24. A layer assembly according to claim 14, wherein an energy barrier to injection of electrons from an effective electron transport level of the light-emitting layer into an effective electron transport level of an adjoining hole transport layer is less than about 0.4 eV, so that the adjoining hole transport layer is an inefficient electron-blocking layer, wherein the light-emitting layer comprises an adjoining hole transport layer.

25. A layer assembly according to claim 1, comprising a p-doped hole transport layer, wherein a layer region between the p-doped hole transport layer and the light-emitting region is free of one or more undoped intermediate layers.

26. A layer assembly according to claim 1, wherein the light-emitting region directly adjoins the hole-injecting contact.

27. A layer assembly according to claim 1 comprising an n-doped electron transport layer, wherein a layer region between the n-doped electron transport layer and the light-emitting region is free of one or more undoped intermediate layers.

28. A layer assembly according to claim 1, wherein the other light-emitting layer directly adjoins the electron-injecting contact.

29. A light-emitting component comprising a layer assembly according to claim 1.

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Patent History
Patent number: 8653537
Type: Grant
Filed: Jun 16, 2005
Date of Patent: Feb 18, 2014
Patent Publication Number: 20080203406
Assignee: Novaled AG (Dresden)
Inventors: Gufeng He (Dresden), Martin Pfeiffer (Dresden), Jan Blochwitz-Nimoth (Dresden)
Primary Examiner: Kyoung Lee
Application Number: 11/573,617