Abstract: A method is proposed for signal processing with predistortion. An amplifier circuit is provided for this purpose, whose operating states are characterized by at least one characteristic variable. A digital modulation signal having two components (R, ?), as well as a power word (LS), derived from the first component (R), are produced, and an operating state of the at least one amplifier circuit is then determined by recording of the characteristic variable. The power word (LS) is compared with the reference value and used to decide whether to predistort the first and/or the second component. A table with various predistortion coefficients is selected from at least two tables, depending on the operating state of the amplifier circuit. One predistortion coefficient is then determined from the selected table with the produced power word (LS) and the first component (R), and the predistortion coefficient is used for predistortion.

Abstract: In a transmitting arrangement a power amplifier is coupled to a radio-frequency antenna arrangement via a controllable matching apparatus. This allows direct impedance transformation of the output of the power amplifier to the input of the radio-frequency antenna arrangement. There is no need for transformation to the 50 ohm standard. The power amplifier, matching apparatus and a control circuit for controlling the impedance of the matching apparatus form a functional unit, which is advantageously in the form of a monolithically integrated structure in a semiconductor body. A receiving arrangement is produced in the same way, comprising an antenna, a filter device and a matching apparatus connected between them.

Abstract: The invention provides a transmission device having adaptive digital predistortion, which has a transmission path and a feedback path. The transmission path contains a predistortion unit which takes a derived control signal (LS) and baseband signals applied to the input side as a basis for calculating the address of a predistortion coefficient (KOEFF1) stored in a memory and logically combines this predistortion coefficient with the applied baseband signals in a complex multiplication unit. The use of complex coefficients and of the complex multipliers allows compensation both for AM/AM distortion and for AM/PM distortion in an amplifier device connected downstream of the predistortion unit. Usefully, the feedback path of the transmission device with digital adaptive predistortion can also be implemented using the reception device in a transceiver.

Abstract: A braking system for a vehicle in which, when a brake pedal is depressed, a corresponding braking effect is generated. The system includes an operating device which is in operative connection with an accelerator pedal, for setting a desired deceleration. When the accelerator pedal is released, the braking system brakes the vehicle corresponding to the set desired deceleration.

Abstract: Arrangement having a braking system for a vehicle, which, when a brake pedal is depressed, generates a corresponding braking effect, and having an operating device for setting a desired deceleration which is in an operative connection with an accelerator pedal, wherein, when the accelerator pedal is released, the braking system brakes the vehicle corresponding to the set desired deceleration.

Abstract: A power transistor cell includes an air bridge and a plurality of individual transistors. Each of the plurality of individual transistors has at least one separate connection contact. Each of the at least one separate connection contact of the plurality of individual transistors is thermally conductively connected to one another through the air bridge forming air bridge connections, which define a contact plane. A surface of the contact plane that contains each connection path between two of the air bridge connections defines a convex region. The air bridge is formed to have, in the contact plane, dimensions that exceed a smallest convex region containing all of the air bridge connections in all directions of the air bridge. Each of the plurality of power transistor cells can be respectively thermally conductively connected to one another through the air bridge to form a block of power transistor cells.

Abstract: Very thin semiconductor chips are produced from a relatively large semiconductor substrate (such as gallium arsenide substrate) by generating a select pattern of crystallographic stress areas in a front surface of the substrate, as by mechanical scoring or application of a layer of material having a coefficient of thermal expansion significantly different from that of the semiconductor material in a pattern corresponding to the desired chip; applying an etch-resistant carrier member to such stressed front surface and etching the entire back surface of the substrate into a thickness less than 50 .mu.m, whereby the etching reaction penetrates into the region of the crystallographic stress and a division of the resultant eroded body into individual chips corresponding to the selected patterns occurs, with the chips being carried by said carrier member.