Patents by Inventor Jan Richter

Jan Richter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250047058
    Abstract: The invention relates to an optoelectronic semiconductor component having a frame body, which is radiolucent at least in regions, and at least one first semiconductor chip which is designed to emit a first electromagnetic radiation. The frame body has a recess. At least a first waveguide is formed in the frame body. A first coupling surface of the first waveguide is formed on a side surface of the recess facing the first semiconductor chip. A decoupling surface is formed on an outer surface of the frame body. The first semiconductor chip is arranged in the recess in such a way that at least a part of the first electromagnetic radiation enters into the first waveguide. The invention also relates to method for producing a plurality of optoelectronic semiconductor components.
    Type: Application
    Filed: November 16, 2022
    Publication date: February 6, 2025
    Applicant: ams-OSRAM International GmbH
    Inventors: Stephan BERGHOFER, Jan SEIDENFADEN, Markus RICHTER, Nicole BERNER
  • Patent number: 12211702
    Abstract: A solid body is disclosed. The solid body includes: a detachment plane in an interior space of the solid body, the detachment plane including laser radiation-induced modifications; and a region including layers and/or components. A multi-component arrangement is also disclosed. The multi-component arrangement includes: a solid-body layer including more than 50% SiC and modifications or modification components generating pressure tensions in a region of a first surface, the modifications being amorphized components of the solid-body layer, the modifications being spaced closer to the first surface than to a second surface opposite the first surface, the first surface being essentially level; and a metal layer on the first surface of the solid-body layer.
    Type: Grant
    Filed: March 22, 2021
    Date of Patent: January 28, 2025
    Assignee: Siltectra GmbH
    Inventors: Wolfram Drescher, Marko David Swoboda, Ralf Rieske, Christian Beyer, Jan Richter
  • Patent number: 12203110
    Abstract: Aspects of this invention, inter alia, relate to novel systems for targeting, editing or manipulating DNA in a cell, using novel synthetic RNA-guided nucleases (sRGNs). The sRGNs are derived from wildtype or parental small type II CRISPR Cas9 endonucleases.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: January 21, 2025
    Assignees: CRISPR THERAPEUTICS AG, BAYER HEALTHCARE LLC
    Inventors: Andre Cohnen, Moritz Schmidt, Wayne Coco, Michael Biag Gamalinda, Ashish Gupta, Christian Pitzler, Florian Richter, Jan Tebbe, Christopher Cheng, Ryo Takeuchi, Caroline W. Reiss
  • Patent number: 12190162
    Abstract: A method including a) receiving a computer generated data set of sequencing constraints describing a software system to be executed on an automation system and including software components and runnable function entities distributed over the number of computing nodes; b) generating a transition matrix from the data set of sequencing constraints, the transition matrix having a plurality of matrix elements each of them describing, by a transition value, a transition from a runnable function entity to another runnable function entity; c) receiving a computer generated communication matrix describing communication links between the computing nodes in the automation system; d) generating a Markov chain out of the data set of sequencing constraints and the communication matrix; e) generating a distribution function from the Markov chain describing used resources of the computing nodes by the software components and runnable function entities; and f) optimizing the allocation of resources.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: January 7, 2025
    Assignee: Siemens Aktiengesellschaft
    Inventors: Andrés Botero Halblaub, Jan Richter
  • Patent number: 12159805
    Abstract: The present invention therefore relates to a method for separating at least one solid body layer (2) from a donor substrate (1).
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: December 3, 2024
    Assignee: Siltectra GmbH
    Inventors: Marko Swoboda, Ralf Rieske, Christian Beyer, Jan Richter
  • Patent number: 12151314
    Abstract: The present invention relates to a method, according to claim 1, for separating at least one solid body layer (1), particularly a solid body disk, from a donor substrate (2).
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: November 26, 2024
    Assignee: Siltectra GmbH
    Inventors: Marko Swoboda, Ralf Rieske, Christian Beyer, Jan Richter
  • Patent number: 12097641
    Abstract: A method for separating a solid-body layer from a donor substrate includes providing a donor substrate having a planar surface, a longitudinal axis orthogonal to the planar surface, and a peripheral surface, and producing modifications within the donor substrate using at least one LASER beam. The at least one LASER beam penetrates the donor substrate via the peripheral surface at an angle not equal to 90° relative to the longitudinal axis of the donor substrate. The method further includes producing a stress-inducing polymer layer on the planar surface of the donor substrate, and producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer. The mechanical stresses produce a crack for separating the solid-body layer, and wherein the crack propagates along the modifications.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: September 24, 2024
    Assignee: Siltectra GmbH
    Inventors: Marko David Swoboda, Christian Beyer, Franz Schilling, Jan Richter
  • Patent number: 12030216
    Abstract: A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.
    Type: Grant
    Filed: August 23, 2023
    Date of Patent: July 9, 2024
    Assignee: Siltectra GmbH
    Inventors: Marko David Swoboda, Christian Beyer, Ralf Rieske, Albrecht Ullrich, Jan Richter
  • Patent number: 11996331
    Abstract: A method for separating a solid body includes: providing a first solid body having opposite first and second surfaces and a crystal lattice, and that is at least partially transparent to a laser beam emitted by a laser; modifying a portion of the crystal lattice by the laser beam, the laser beam penetrating through the first surface, the modified portion of the crystal lattice extending in a plane parallel to the first surface, as a result of the modification, subcritical cracks are formed arranged in a plane parallel to the first surface, a plurality of the subcritical cracks forming a detachment region in the first solid body, the plurality of the subcritical cracks passing at least in some sections through the modified portion of the crystal lattice; and separating the first solid body along the detachment region to form a wafer and a second solid body.
    Type: Grant
    Filed: December 9, 2022
    Date of Patent: May 28, 2024
    Assignee: Siltectra GmbH
    Inventors: Christian Beyer, Jan Richter
  • Publication number: 20240058899
    Abstract: A method for producing a detachment region in a solid-state body includes: providing a solid body that consists of a chemical compound comprising a combination of elements from the 3rd, 4th and 5th main group and subgroup 12 of the Periodic Table of the Elements; providing a laser light source; and exposing the solid body to laser beams from the laser light source. The laser beams penetrate into the solid body via a main surface of the solid body and are applied in a defined manner on a predefined portion of the solid body within the solid body to form a detachment region. The application of the laser beams successively creates multiple modifications in a crystal lattice of the solid body which, as a result of the modifications, fissures in a subcritical manner at least in a portion in each case in regions that surround the modifications.
    Type: Application
    Filed: November 1, 2023
    Publication date: February 22, 2024
    Inventors: Jan Richter, Christian Beyer, Ralf Rieske
  • Patent number: 11869810
    Abstract: The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: January 9, 2024
    Assignee: Siltectra GmbH
    Inventors: Marko Swoboda, Ralf Rieske, Christian Beyer, Jan Richter
  • Publication number: 20230390961
    Abstract: A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.
    Type: Application
    Filed: August 23, 2023
    Publication date: December 7, 2023
    Inventors: Marko David Swoboda, Christian Beyer, Ralf Rieske, Albrecht Ullrich, Jan Richter
  • Patent number: 11833617
    Abstract: The invention relates to a method for creating a detachment zone in a solid in order to detach a solid portion, especially a solid layer, from the solid, said solid portion that is to be detached being thinner than the solid from which the solid portion has been removed.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: December 5, 2023
    Assignee: Siltectra GmbH
    Inventors: Jan Richter, Christian Beyer, Ralf Rieske
  • Patent number: 11822307
    Abstract: The present invention relates to a method for generating control data for the secondary machining of a solid body (1), in particular wafer, which is modified by means of laser beams (10). The interior of said solid body (1) has multiple modifications (12), said modifications (12) having been produced by means of laser beams (10).
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: November 21, 2023
    Assignee: Siltectra GmbH
    Inventors: Marko Swoboda, Ralf Rieske, Jan Richter, Franz Schilling
  • Publication number: 20230330769
    Abstract: Provided is a machining apparatus including a profile sensor unit configured to obtain shape information about a parent substrate; and a laser scan unit configured to direct a laser beam onto the parent substrate, wherein a laser beam axis of the laser beam is tilted to an exposed main surface of the parent substrate, and wherein a track of the laser beam on the parent substrate is controllable as a function of the shape information obtained from the profile sensor unit.
    Type: Application
    Filed: June 16, 2023
    Publication date: October 19, 2023
    Inventors: Ralf Rieske, Alexander Binter, Wolfgang Diewald, Bernhard Goller, Heimo Graf, Gerald Lackner, Jan Richter, Roland Rupp, Guenter Schagerl, Marko David Swoboda
  • Patent number: 11787083
    Abstract: The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4).
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: October 17, 2023
    Assignee: Siltectra GmbH
    Inventors: Marko Swoboda, Christian Beyer, Ralf Rieske, Albrecht Ullrich, Jan Richter
  • Patent number: 11786995
    Abstract: A method for cutting off at least one portion, in particular a wafer, from a solid body is contemplated. The method includes: modifying the crystal lattice of the solid body by means of a modifier, wherein a number of modifications are produced to form a nonplanar, in particular convex, detachment region in the interior of the solid body, wherein the modifications are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion and a defined further treatment of the portion, detaching the portion from the solid body.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: October 17, 2023
    Assignee: Siltectra GmbH
    Inventor: Jan Richter
  • Patent number: 11772201
    Abstract: A method for producing microcracks in an interior of a composite structure includes: providing or producing the composite structure which has a solid body and at least one metallic coating and/or electrical components situated or provided on one side of the solid body, the solid body containing or being made of silicon carbide (SiC); and producing modifications in the interior of the solid body. Laser radiation is introduced into a flat surface of the solid body to cause multiphoton excitation which brings about plasma generation. The modifications are effected by the plasma in the form of a material transformation which generates compressive stresses in the solid body, thereby developing subcritical cracks in a surrounding area of a particular modification. The laser radiation is introduced into the solid body in pulses having an intensity which reaches a maximum within 10 ns after a start of a particular pulse.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: October 3, 2023
    Assignee: Siltectra GmbH
    Inventors: Jan Richter, Marko Swoboda
  • Publication number: 20230307286
    Abstract: A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.
    Type: Application
    Filed: May 26, 2023
    Publication date: September 28, 2023
    Inventors: Wolfram Drescher, Jan Richter, Christian Beyer
  • Patent number: 11712749
    Abstract: Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.
    Type: Grant
    Filed: August 6, 2020
    Date of Patent: August 1, 2023
    Assignee: Infineon Technologies AG
    Inventors: Ralf Rieske, Alexander Binter, Wolfgang Diewald, Bernhard Goller, Heimo Graf, Gerald Lackner, Jan Richter, Roland Rupp, Guenter Schagerl, Marko Swoboda