Abstract: Embodiments of the present disclosure relate to a system, a software application, and methods of digital lithography for semiconductor packaging. The method includes comparing positions of vias and via locations, generating position data based on the comparing the positions of vias and the via locations, providing the position data of the vias to a digital lithography device, updating a redistributed metal layer (RDL) mask pattern according to the position data such that RDL locations correspond to the positions of the vias, and projecting the RDL mask pattern with the digital lithography device.

Abstract: Embodiments described herein relate to methods of forming layers using maskless based lithography. In these embodiments, the methods implement ladders of dose change such that a geometric shape can be divided into overlaying sections. The overlaying sections can include a different dose of each section such that taper control can be achieved. The taper can be achieved by manipulating the geometry “mask data” into overlaying sections that are exposed by various doses controlled by pixel blending (PB) exposure techniques. To perform the methods described herein, a maskless lithography tool is used. The maskless lithography tool includes a controller that performs software based “mask data” manipulation.

Abstract: Embodiments described herein relate to methods of forming layers using maskless based lithography. In these embodiments, the methods implement ladders of dose change such that a geometric shape can be divided into overlaying sections. The overlaying sections can include a different dose of each section such that taper control can be achieved. The taper can be achieved by manipulating the geometry “mask data” into overlaying sections that are exposed by various doses controlled by pixel blending (PB) exposure techniques. To perform the methods described herein, a maskless lithography tool is used. The maskless lithography tool includes a controller that performs software based “mask data” manipulation.

Abstract: Exemplary methods of packaging a substrate may include rotationally aligning a substrate to a predetermined angular position. The methods may include transferring the substrate to a metrology station. The methods may include measuring a topology of the substrate at the metrology station. The methods may include applying a first chucking force to the substrate to flatten the substrate. The methods may include generating a mapping of a die pattern on an exposed surface of the substrate. The methods may include transferring the substrate to a printing station. The methods may include applying a second chucking force to the substrate to flatten the substrate against a surface of the printing station. The methods may include adjusting a printing pattern based on the mapping of the die pattern. The methods may include printing the printing pattern on the exposed surface of the substrate.

Abstract: Embodiments described herein relate to methods of printing features within a lithography environment. The methods include determining a mask pattern. The mask pattern includes auxiliary features to be provided with main features to a maskless lithography device in a lithography process. The auxiliary features are determined with a rule-based process flow or a lithography model process flow.

Abstract: Actual physical locations of dies on a substrate package may be identified without using a full metrology scan of the substrate. Instead, one or more cameras may be used to efficiently locate the approximate location of any of the alignment features based on their expected positioning in the design file for the packages are substrate. The cameras may then be moved to locations where alignment features should be, and images may be captured to determine the actual location of the alignment feature. These actual locations of the alignment features may then be used to identify coordinates for the dies, as well as rotations and/or varying heights of the dies on the packages. A difference between the expected location from the design file and the actual physical location may be used to adjust instructions for the digital lithography system to compensate for the misalignment of the dies.

Abstract: The present disclosure generally relates to methods and systems for manufacturing wire grid polarizers (WGP) using Markle-Dyson exposure systems and dual tone development (DTD) frequency doubling. In one embodiment, the method includes depositing a photoresist layer over an aluminum-coated display substrate, patterning the photoresist layer by dual tone development using a Markle-Dyson system to form a photoresist pattern, and transferring the photoresist pattern into the aluminum-coated display substrate to manufacture a WGP having finer pitch, for example less than or equal to about 100 nm, and increased frequency.

Abstract: Embodiments of the present disclosure relate to a system, a software application, and a method of a lithography process to update one or more of a mask pattern, maskless lithography device parameters, lithography process parameters utilizing a file readable by each of the components of a lithography environment. The file readable by each of the components of a lithography environment stores and shares textual data and facilitates communication between of the components of a lithography environment such that the mask pattern corresponds to a pattern to be written is updated, the maskless lithography device of the lithography environment is calibrated, and process parameters of the lithography process are corrected for accurate writing of the mask pattern on successive substrates.

Abstract: The present disclosure generally relates to systems and methods for manufacturing wire grid polarizers for LCDs using interference lithography, which are also useful for generating large-area grating patterns. In one embodiment, a method includes depositing a bottom anti-reflective coating layer over an aluminum coated flat panel display substrate, depositing a photoresist layer over the bottom anti-reflective coating layer, and exposing the photoresist layer with an image from a phase grating mask. The exposure with the phase grating mask is done by imaging the ±1 diffraction orders from the phase grating mask onto the substrate using a half Dyson optical system. A plurality of half Dyson systems are generally used in parallel to pattern fine geometry lines and spaces of a wire grid polarizer for a large area substrate. Each half Dyson system includes a primary mirror, a positive lens and a reticle.

Abstract: Methods and systems are provided that, in some embodiments, print and process a layer. The layer can be on a wafer or on an application panel. Thereafter, locations of the features that were actually printed and processed are measured. Based upon differences between the measured differences and designed locations for those features at least one distortion model is created. Each distortion model is inverted to create a corresponding correction model. When there are multiple sections, a distortion model and a correction model can be created for each section. Multiple correction models can be combined to create a global correction model.

Abstract: Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact illumination tools for projecting an image onto a substrate are provided. In one embodiment, an illumination tool includes a microLED array including one or more microLEDs. Each microLED produces at least one light beam. The illumination tool also includes a beamsplitter adjacent the microLED array, a camera adjacent the beamsplitter, and a projection optics system adjacent the beamsplitter.

Abstract: In one embodiment of the invention, a method for correcting a pattern placement on a substrate is disclosed. The method begins by detecting three reference points for a substrate. A plurality of sets of three die location points are detected, each set indicative of an orientation of a die structure, the plurality of sets include a first set associated with a first dies and a second set associated with a second die. A local transformation is calculated for the orientation of the first die and the second on the substrate. Three orientation points are selected from the plurality of sets of three die location points wherein the orientation points are not set members of the same die. A first global orientation of the substrate is calculated from the selected three points from the set of points and the first global transformation and the local transformation for the substrate are stored.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for performing photolithography processes. In one embodiment, a system including multiple interferometers for accurately measuring the location of a substrate during operation is provided. The system may include two chucks, and the two chucks are aligned in a first direction. The interferometers are placed along the first direction to measure the location of the substrate with respect to the first direction. The reduced distance between the interferometers and the chuck improves the accuracy of the measurement of the location of the substrate. In another embodiment, mask pattern data is provided to the system, and the mask pattern data is modified based on location and position information of the substrate. By controlling the mask pattern data with the location and position information of the substrate, less positional errors of the pattern formed on the substrate can be achieved.

Abstract: The present disclosure generally relates to systems and methods for manufacturing wire grid polarizers for LCDs using interference lithography, which are also useful for generating large-area grating patterns. In one embodiment, a method includes depositing a bottom anti-reflective coating layer over an aluminum coated flat panel display substrate, depositing a photoresist layer over the bottom anti-reflective coating layer, and exposing the photoresist layer with an image from a phase grating mask. The exposure with the phase grating mask is done by imaging the ±1 diffraction orders from the phase grating mask onto the substrate using a half Dyson optical system. A plurality of half Dyson systems are generally used in parallel to pattern fine geometry lines and spaces of a wire grid polarizer for a large area substrate. Each half Dyson system includes a primary mirror, a positive lens and a reticle.

Abstract: In one embodiment of the invention, a method for correcting a pattern placement on a substrate is disclosed. The method begins by detecting three reference points for a substrate. A plurality of sets of three die location points are detected, each set indicative of an orientation of a die structure, the plurality of sets include a first set associated with a first dies and a second set associated with a second die. A local transformation is calculated for the orientation of the first die and the second on the substrate. Three orientation points are selected from the plurality of sets of three die location points wherein the orientation points are not set members of the same die. A first global orientation of the substrate is calculated from the selected three points from the set of points and the first global transformation and the local transformation for the substrate are stored.

Abstract: The present disclosure generally relates to methods and systems for manufacturing wire grid polarizers (WGP) using Markle-Dyson exposure systems and dual tone development (DTD) frequency doubling. In one embodiment, the method includes depositing a photoresist layer over an aluminum-coated display substrate, patterning the photoresist layer by dual tone development using a Markle-Dyson system to form a photoresist pattern, and transferring the photoresist pattern into the aluminum-coated display substrate to manufacture a WGP having finer pitch, for example less than or equal to about 100 nm, and increased frequency.

Abstract: Methods and systems are provided that, in some embodiments, print and process a layer. The layer can be on a wafer or on an application panel. Thereafter, locations of the features that were actually printed and processed are measured. Based upon differences between the measured differences and designed locations for those features at least one distortion model is created. Each distortion model is inverted to create a corresponding correction model. When there are multiple sections, a distortion model and a correction model can be created for each section. Multiple correction models can be combined to create a global correction model.

Abstract: In one embodiment of the invention, a method for correcting a pattern placement on a substrate is disclosed. The method begins by detecting three reference points for a substrate. A plurality of sets of three die location points are detected, each set indicative of an orientation of a die structure, the plurality of sets include a first set associated with a first dies and a second set associated with a second die. A local transformation is calculated for the orientation of the first die and the second on the substrate. Three orientation points are selected from the plurality of sets of three die location points wherein the orientation points are not set members of the same die. A first global orientation of the substrate is calculated from the selected three points from the set of points and the first global transformation and the local transformation for the substrate are stored.

Abstract: In one embodiment of the invention, a method for correcting a pattern placement on a substrate is disclosed. The method begins by detecting three reference points for a substrate. A plurality of sets of three die location points are detected, each set indicative of an orientation of a die structure, the plurality of sets include a first set associated with a first dies and a second set associated with a second die. A local transformation is calculated for the orientation of the first die and the second on the substrate. Three orientation points are selected from the plurality of sets of three die location points wherein the orientation points are not set members of the same die. A first global orientation of the substrate is calculated from the selected three points from the set of points and the first global transformation and the local transformation for the substrate are stored.

Abstract: Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact illumination tools for projecting an image onto a substrate are provided. In one embodiment, an illumination tool includes a microLED array including one or more microLEDs. Each microLED produces at least one light beam. The illumination tool also includes a beamsplitter adjacent the microLED array, a camera adjacent the beamsplitter, and a projection optics system adjacent the beamsplitter.