Abstract: A three-dimensional semiconductor device includes a stacked structure on a lower structure, the stacked structure including a lower group including gate electrodes vertically stacked and spaced apart from each other, and an upper group including gate electrodes vertically stacked and spaced apart, the lower group and the upper group being vertically stacked, and a vertical structure passing through the stacked structure. The vertical structure may include a vertical core pattern, a vertical buffer portion therein, and a surrounding vertical semiconductor layer, the vertical structure may include a lower vertical portion passing through the lower group and an upper vertical portion passing through the upper group, an upper region of the lower vertical portion may have a width greater than that of a lower region of the upper vertical portion. The vertical buffer portion may be in the lower vertical portion and below the upper vertical portion.

Abstract: A semiconductor device includes a cell semiconductor pattern disposed on a semiconductor substrate. A semiconductor dummy pattern is disposed on the semiconductor substrate. The semiconductor dummy pattern is co-planar with the cell semiconductor pattern. A first circuit is disposed between the semiconductor substrate and the cell semiconductor pattern. A first interconnection structure is disposed between the semiconductor substrate and the cell semiconductor pattern. A first dummy structure is disposed between the semiconductor substrate and the cell semiconductor pattern. Part of the first dummy structure is co-planar with part of the first interconnection structure. A second dummy structure not overlapping the cell semiconductor pattern is disposed on the semiconductor substrate. Part of the second dummy structure is co-planar with part of the first interconnection structure.

Abstract: A semiconductor device includes a cell semiconductor pattern disposed on a semiconductor substrate. A semiconductor dummy pattern is disposed on the semiconductor substrate. The semiconductor dummy pattern is co-planar with the cell semiconductor pattern. A first circuit is disposed between the semiconductor substrate and the cell semiconductor pattern. A first interconnection structure is disposed between the semiconductor substrate and the cell semiconductor pattern. A first dummy structure is disposed between the semiconductor substrate and the cell semiconductor pattern. Part of the first dummy structure is co-planar with part of the first interconnection structure. A second dummy structure not overlapping the cell semiconductor pattern is disposed on the semiconductor substrate. Part of the second dummy structure is co-planar with part of the first interconnection structure.

Abstract: Semiconductor memory devices are provided. A semiconductor memory device includes a memory cell region and an insulator on a portion of the memory cell region. The semiconductor memory device includes a stress relief material that is in the insulator and is between the memory cell region and another region of the semiconductor memory device.

Abstract: A vertical memory device includes conductive lines on a substrate, first and second semiconductor patterns, first and second pads, first and second electrodes, a third electrode, and a first division pattern. The conductive lines are stacked in a vertical direction and extend in a first direction. The first and second semiconductor patterns extend through the conductive lines in the vertical direction. The first and second pads are formed on the first and second semiconductor patterns. The first and second electrodes are electrically connected to the first and second pads. The third electrode is electrically connected to a first conductive line of the conductive lines. The first division pattern extends in a second direction, and extends through and divides the first conductive line. In a plan view, the first and second semiconductor patterns and the first conductive line are disposed at one side of the first division pattern.

Abstract: An integrated circuit device includes word line structures, insulating structures, a channel hole, and charge trap patterns. The word line structures and the insulating structures are interleaved with each other and extend in a horizontal direction parallel to a main surface of a substrate, and overlap one another in a vertical direction. The channel hole passes through the word line structures and the insulating structures in the vertical direction. The charge trap patterns are located in the channel hole, and are spaced apart from one another in the vertical direction with a local insulating region therebetween.

Abstract: A vertical memory device includes a substrate having a trench structure, gate electrodes on the substrate, the gate electrodes being spaced apart from each other in a first direction substantially vertical to an upper surface of the substrate, a channel including a vertical portion extending through the gate electrodes in the first direction, and a horizontal portion extending in the trench structure in a second direction substantially parallel to the upper surface of the substrate, the horizontal portion being connected the vertical portion, and an epitaxial layer on a first portion of the substrate and connected to the horizontal portion of the channel, the first portion of the substrate being adjacent to ends of the gate electrode in the second direction.

Abstract: A three-dimensional (3D) semiconductor device includes a substrate having a cell array region and a peripheral circuit region. A cell array structure is in the cell array region and includes a 3D memory cell array. A peripheral logic structure is in the peripheral circuit region and includes a peripheral circuit transistor. A cell insulating layer insulates the cell array structure. A peripheral insulating layer is insulated from the peripheral logic structure and the cell array region and has a porous layer.

Abstract: A vertical memory device includes a channel, a dummy channel, a plurality of gate electrodes, and a support pattern. The channel extends in a first direction perpendicular to an upper surface of a substrate. The dummy channel extends from the upper surface of the substrate in the first direction. The plurality of gate electrodes are formed at a plurality of levels, respectively, spaced apart from each other in the first direction on the substrate. Each of the gate electrodes surrounds outer sidewalls of the channel and the dummy channel. The support pattern is between the upper surface of the substrate and a first gate electrode among the gate electrodes. The first gate electrode is at a lowermost one of the levels. The channel and the dummy channel contact each other between the upper surface of the substrate and the first gate electrode.

Abstract: An integrated circuit device includes channel structures extending from a substrate in a vertical direction, memory cell strings disposed along the plurality of channel structures, gate lines spaced apart from one another in the vertical direction and including erase control lines and string selection lines, and driving transistors including erase control driving transistors connected to the erase control lines and string selection driving transistors connected to the string selection lines.

Abstract: A vertical memory device includes conductive lines on a substrate, first and second semiconductor patterns, first and second pads, first and second electrodes, a third electrode, and a first division pattern. The conductive lines are stacked in a vertical direction and extend in a first direction. The first and second semiconductor patterns extend through the conductive lines in the vertical direction. The first and second pads are formed on the first and second semiconductor patterns. The first and second electrodes are electrically connected to the first and second pads. The third electrode is electrically connected to a first conductive line of the conductive lines. The first division pattern extends in a second direction, and extends through and divides the first conductive line. In a plan view, the first and second semiconductor patterns and the first conductive line are disposed at one side of the first division pattern.

Abstract: Provided are a semiconductor device, a method of manufacturing the semiconductor device, and an electronic system adopting the same. The semiconductor device includes a semiconductor pattern, which is disposed on a semiconductor substrate and has an opening. The semiconductor pattern includes a first impurity region having a first conductivity type and a second impurity region having a second conductivity type different from the first conductivity type. A peripheral transistor is disposed between the semiconductor substrate and the semiconductor pattern. A first peripheral interconnection structure is disposed between the semiconductor substrate and the semiconductor pattern. The first peripheral interconnection structure is electrically connected to the peripheral transistor. Cell gate conductive patterns are disposed on the semiconductor pattern. Cell vertical structures are disposed to pass through the cell gate conductive patterns and to be connected to the semiconductor pattern.

Abstract: A semiconductor device includes a cell semiconductor pattern disposed on a semiconductor substrate. A semiconductor dummy pattern is disposed on the semiconductor substrate. The semiconductor dummy pattern is co-planar with the cell semiconductor pattern. A first circuit is disposed between the semiconductor substrate and the cell semiconductor pattern. A first interconnection structure is disposed between the semiconductor substrate and the cell semiconductor pattern. A first dummy structure is disposed between the semiconductor substrate and the cell semiconductor pattern. Part of the first dummy structure is co-planar with part of the first interconnection structure. A second dummy structure not overlapping the cell semiconductor pattern is disposed on the semiconductor substrate. Part of the second dummy structure is co-planar with part of the first interconnection structure.

Abstract: Provided are a semiconductor device, a method of manufacturing the semiconductor device, and an electronic system adopting the same. The semiconductor device includes a semiconductor pattern, which is disposed on a semiconductor substrate and has an opening. The semiconductor pattern includes a first impurity region having a first conductivity type and a second impurity region having a second conductivity type different from the first conductivity type. A peripheral transistor is disposed between the semiconductor substrate and the semiconductor pattern. A first peripheral interconnection structure is disposed between the semiconductor substrate and the semiconductor pattern. The first peripheral interconnection structure is electrically connected to the peripheral transistor. Cell gate conductive patterns are disposed on the semiconductor pattern. Cell vertical structures are disposed to pass through the cell gate conductive patterns and to be connected to the semiconductor pattern.

Abstract: Three-dimensional (3D) semiconductor devices may be provided. A 3D semiconductor device may include a substrate including a chip region and a scribe line region, a cell array structure including memory cells three-dimensionally arranged on the chip region of the substrate, a stack structure disposed on the scribe line region of the substrate and including first layers and second layers that are vertically and alternately stacked, and a plurality of vertical structures extending along a vertical direction that is perpendicular to a top surface of the substrate and penetrating the stack structure.

Abstract: Integrated circuit devices may include a plurality of word line structures and a plurality of insulating films that are stacked alternately. Sides of the plurality of word line structures and the plurality of insulating films define a side of a channel hole extending through the plurality of word line structures and the plurality of insulating films. The devices may also include a blocking dielectric film on the side of the channel hole, and a plurality of charge storage films on the blocking dielectric film and on the sides of the plurality of word line structures, respectively. Each of the plurality of charge storage films may include a first charge storage film and a second charge storage film sequentially stacked on a respective one of the sides of the plurality of word line structures. A surface of the second charge storage film may include a recess in a middle portion thereof.

Abstract: An integrated circuit device includes channel structures extending from a substrate in a vertical direction, memory cell strings disposed along the plurality of channel structures, gate lines spaced apart from one another in the vertical direction and including erase control lines and string selection lines, and driving transistors including erase control driving transistors connected to the erase control lines and string selection driving transistors connected to the string selection lines.

Abstract: Semiconductor memory devices are provided. A semiconductor memory device includes a memory cell region and an insulator on a portion of the memory cell region. The semiconductor memory device includes a stress relief material that is in the insulator and is between the memory cell region and another region of the semiconductor memory device.

Abstract: A memory device includes gate electrode layers stacked on an upper surface of a substrate and each including a plurality of unit electrodes extending in a first direction, and a plurality of connecting electrodes connecting the unit electrodes to each other. The memory device also includes channel structures extending through the gate electrode layers in a direction perpendicular to the upper surface of the substrate, first common source lines extending in the first direction and interposed between the unit electrodes, and second common source lines extending in the first direction between the first common source lines and each having a first line and a second line separated from each other in the first direction by the connecting electrodes.

Abstract: A vertical memory device includes conductive lines on a substrate, first and second semiconductor patterns, first and second pads, first and second electrodes, a third electrode, and a first division pattern. The conductive lines are stacked in a vertical direction and extend in a first direction. The first and second semiconductor patterns extend through the conductive lines in the vertical direction. The first and second pads are formed on the first and second semiconductor patterns. The first and second electrodes are electrically connected to the first and second pads. The third electrode is electrically connected to a first conductive line of the conductive lines. The first division pattern extends in a second direction, and extends through and divides the first conductive line. In a plan view, the first and second semiconductor patterns and the first conductive line are disposed at one side of the first division pattern.