Abstract: A memory system includes an error correction code (“ECC”) generation circuit using write data to generate an ECC to be stored together with the write data; a memory device, during a write operation, storing received data and a received ECC in a memory core, and, during a read operation, checking for an error in data read from the memory core, correcting the error in read data using the ECC and outputting error-corrected data and the ECC, when the error in the read data is between one bit and N bits inclusive, and outputting the read data and the ECC when no error is present in the read data or the error in the read data exceeds N bits; and an error correction circuit correcting, when an error is present in data outputted from the memory device, the error in the data outputted using an ECC outputted from the memory device.

Abstract: A memory device includes a write error check circuit suitable for detecting an error in received data using an error correction code during a write operation; and a memory core suitable for storing the received data and the received error correction code when no error is detected by the write error check circuit.

Abstract: An on-chip logic block may include a host ECC circuit configured to correct an error based on host parity. The on-chip logic block may include a memory ECC circuit configured to correct an error based on memory parity.

Abstract: A semiconductor device includes: first to Nth input terminals (where N is an integer equal to or greater than 2); and a redundant input terminal. When a Kth input terminal (where K is an integer ranging from 1 to N?1) is defective among the first to Nth input terminals, (K+1)th to Nth input terminals receive signals of Kth to (N?1)th input terminals, respectively, and the redundant input terminal receives a signal of the Nth input terminal.

Abstract: An on-chip logic block may include a host ECC circuit configured to correct an error based on host parity. The on-chip logic block may include a memory ECC circuit configured to correct an error based on memory parity.

Abstract: A logic chip and memory chip stacked over the logic chip, the logic chip having a first surface facing the memory chip and a second surface opposite to the first surface and including: first and second internal input/output circuit units for exchanging signals; first external input/output circuit unit for exchanging signals through first external input/output pads formed according to an external interface standard of a first memory over the second surface; and second external input/output circuit unit for exchanging signals through second external input/output pads formed according to an external interface standard of a second memory over the second surface, wherein semiconductor device operates in one of a first mode in which the first internal input/output circuit unit and the first external input/output circuit unit are enabled and a second mode in which the first and second internal input/output circuit units and the second external input/output circuit unit are enabled.

Abstract: A logic chip and memory chip stacked over the logic chip, the logic chip having a first surface facing the memory chip and a second surface opposite to the first surface and including: first and second internal input/output circuit units for exchanging signals; first external input/output circuit unit for exchanging signals through first external input/output pads formed according to an external interface standard of a first memory over the second surface; and second external input/output circuit unit for exchanging signals through second external input/output pads formed according to an external interface standard of a second memory over the second surface, wherein semiconductor device operates in one of a first mode in which the first internal input/output circuit unit and the first external input/output circuit unit are enabled and a second mode in which the first and second internal input/output circuit units and the second external input/output circuit unit are enabled.