Abstract: Systems, methods and apparatus for practical realization of an integrated circuit comprising a stack of transistors operating as an RF amplifier are described. As stack height is increased, capacitance values of gate capacitors used to provide a desired distribution of an RF voltage at the output of the amplifier across the stack may decrease to values approaching parasitic/stray capacitance values present in the integrated circuit which may render the practical realization of the integrated circuit difficult. Coupling of an RF gate voltage at the gate of one transistor of the stack to a gate of a different transistor of the stack can allow for an increase in the capacitance value of the gate capacitor of the different transistor for obtaining an RF voltage at the gate of the different transistor according to the desired distribution.

Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.

Abstract: A differential phase and amplitude detector circuit is presented. Two source follower circuits respectively based on NMOS and PMOS transistors are used to charge and discharge a sampling capacitor asymmetrically to provide a measurement of phase and/or amplitude difference between two signals of a substantially same frequency. The measurement can be made in one cycle, with the charging of the sampling capacitor performed during a first half cycle where a voltage difference between the two signals is positive, and the discharging during a second half cycle where a voltage difference between the two signals is negative. Biasing of the two source follower circuits enable an excess current flow between the two transistors of the two source follower circuits beyond a biasing current of the transistors to charge the sampling capacitor during the first half cycle, and disable the excess current flow between the two transistors during the second half cycle.

Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.

Abstract: Systems, methods and apparatus for practical realization of an integrated circuit comprising a stack of transistors operating as an RF amplifier are described. As stack height is increased, capacitance values of gate capacitors used to provide a desired distribution of an RF voltage at the output of the amplifier across the stack may decrease to values approaching parasitic/stray capacitance values present in the integrated circuit which may render the practical realization of the integrated circuit difficult. Coupling of an RF gate voltage at the gate of one transistor of the stack to a gate of a different transistor of the stack can allow for an increase in the capacitance value of the gate capacitor of the different transistor for obtaining an RF voltage at the gate of the different transistor according to the desired distribution.

Abstract: Systems, methods and apparatus for practical realization of an integrated circuit comprising a stack of transistors operating as an RF amplifier are described. As stack height is increased, capacitance values of gate capacitors used to provide a desired distribution of an RF voltage at the output of the amplifier across the stack may decrease to values approaching parasitic/stray capacitance values present in the integrated circuit which may render the practical realization of the integrated circuit difficult. Coupling of an RF gate voltage at the gate of one transistor of the stack to a gate of a different transistor of the stack can allow for an increase in the capacitance value of the gate capacitor of the different transistor for obtaining an RF voltage at the gate of the different transistor according to the desired distribution.

Abstract: Systems, methods and apparatuses for efficient control of a pass device driven into its triode region of operation are described. Output drive capability of an operational amplifier driving the pass device is boosted during a transition of the pass device from operating in a triode region to operating in a saturation region. An exemplary implementation of an LDO controlling pass devices for providing burst RF power to a power amplifier is described. An alternative configuration that boosts the driving capability of the operational amplifier using an asymmetrical mirroring circuit is also described.

Abstract: Systems, methods and apparatus for practical realization of an integrated circuit comprising a stack of transistors operating as an RF amplifier are described. As stack height is increased, capacitance values of gate capacitors used to provide a desired distribution of an RF voltage at the output of the amplifier across the stack may decrease to values approaching parasitic/stray capacitance values present in the integrated circuit which may render the practical realization of the integrated circuit difficult. Coupling of an RF gate voltage at the gate of one transistor of the stack to a gate of a different transistor of the stack can allow for an increase in the capacitance value of the gate capacitor of the different transistor for obtaining an RF voltage at the gate of the different transistor according to the desired distribution.

Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.

Abstract: Systems, methods and apparatus for efficient control and biasing of pass devices driven into their triode region of operation are described. The pass devices are arranged in a cascode configuration comprising a plurality of stacked devices. Biasing of the cascode devices can be according to a voltage division scheme which provides a substantially equal voltage division across the stacked devices when the voltage across the stack is high, and provides a skewed voltage division across the stacked devices when voltage across the stack is reduced, while protecting each of the devices from overvoltage and biasing the cascoded devices for a low RON. An exemplary implementation of an LDO controlling the pass devices for providing burst RF power to a power amplifier is described.

Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.

Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.

Abstract: Embodiments of RF switching amplifiers are described generally herein. Other embodiments may be described and claimed.

Abstract: An arrangement and a method for improving the efficiency of a multistage switching amplifier using a resonant circuit element is presented. The multistage amplifier comprises a pre-driver amplifier, a final stage amplifier and a series L-C arrangement coupled between the pre-driver amplifier and the final stage amplifier. The series L-C arrangement forms a parallel L-C resonant circuit with a gate to source capacitor of an input transistor of the final stage amplifier. An oscillation of energy takes place between the gate to source capacitor of the input transistor of the final stage amplifier and the series L-C arrangement. This oscillation of energy provides the final stage amplifier with driving current and improves efficiency of the overall multistage amplifier arrangement.

Abstract: An arrangement and a method for improving the efficiency of a multistage switching amplifier using a resonant circuit element is presented. The multistage amplifier comprises a pre-driver amplifier, a final stage amplifier and a series L-C arrangement coupled between the pre-driver amplifier and the final stage amplifier. The series L-C arrangement forms a parallel L-C resonant circuit with a gate to source capacitor of an input transistor of the final stage amplifier. An oscillation of energy takes place between the gate to source capacitor of the input transistor of the final stage amplifier and the series L-C arrangement. This oscillation of energy provides the final stage amplifier with driving current and improves efficiency of the overall multistage amplifier arrangement.

Abstract: An arrangement and a method for improving the efficiency of a multistage switching amplifier using a resonant circuit element is presented. The multistage amplifier comprises a pre-driver amplifier, a final stage amplifier and a series L-C arrangement coupled between the pre-driver amplifier and the final stage amplifier. The series L-C arrangement forms a parallel L-C resonant circuit with a gate to source capacitor of an input transistor of the final stage amplifier. An oscillation of energy takes place between the gate to source capacitor of the input transistor of the final stage amplifier and the series L-C arrangement. This oscillation of energy provides the final stage amplifier with driving current and improves efficiency of the overall multistage amplifier arrangement.

Abstract: Embodiments of RF switching amplifiers are described generally herein. Other embodiments may be described and claimed.

Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.

Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.

Abstract: An arrangement and a method for improving the efficiency of a multistage switching amplifier using a resonant circuit element is presented. The multistage amplifier comprises a pre-diver amplifier, a final stage amplifier and a series L-C arrangement coupled between the pre-driver amplifier and the final stage amplifier. The series L-C arrangement forms a parallel L-C resonant circuit with a gate to source capacitor of an input transistor of the final stage amplifier. An oscillation of energy takes place between the gate to source capacitor of the input transistor of the final stage amplifier and the series L-C arrangement. This oscillation of energy provides the final stage amplifier with driving current and improves efficiency of the overall multistage amplifier arrangement.