Abstract: Light emissive devices incorporating a low-reflectance black or color dielectric layer into their layered structure for improving the contrast of the emitted light. The black or color dielectric layer comprises a layer of a dielectric material having a network of passageways, such as pores or grain boundaries, and a colorant, such as black ink particles of a black ink additive, color ink particles of a color ink additive, or active particles of an organic dye, which is dispersed within the network of passageways. The presence of the colorant in the network of passageways significantly reduces the reflectivity of the dielectric layer. The light emissive devices of the present invention are applicable to improve the display contrast in various flat panel display technologies.

Abstract: Light emissive devices incorporating a low-reflectance black or color dielectric layer into their layered structure for improving the contrast of the emitted light. The black or color dielectric layer comprises a layer of a dielectric material having a network of passageways, such as pores or grain boundaries, and a colorant, such as black ink particles of a black ink additive, color ink particles of a color ink additive, or active particles of an organic dye, which is dispersed within the network of passageways. The presence of the colorant in the network of passageways significantly reduces the reflectivity of the dielectric layer. The light emissive devices of the present invention are applicable to improve the display contrast in various flat panel display technologies.

Abstract: Wide band gap semiconductor materials doped with rare earth form alternating current electroluminescent devices. The semiconductors are preferably gallium nitride, indium nitride or aluminum nitride and the electric luminescent device may have an upper and lower thin coat of a dielectric material in turn connected to alternating current electrodes. In a preferred embodiment, the electroluminescent device is formed on a glass substrate coated with a thick film of dielectric. The dielectric can be applied as a gel and heat treated after coating the semiconductor material to form a light emitting device.

Abstract: Wide band gap semiconductor materials doped with rare earths or other light emitting metal form alternating current electroluminescent devices. The semiconductors are preferably gallium nitride, indium nitride or aluminum nitride and the electric luminescent device may have an upper and lower thin coat of a dielectric material in turn connected to alternating current electrodes.