Abstract: A method for forming a wet-etchable, sacrificial lift-off layer or layers compatible with high temperature processing, a sacrificial layer, defined as consisting of a single film of one material or multiple films of multiple materials, that can tolerate high temperatures, is deposited on a substrate, called the original substrate, by sputtering or another suitable technique (e.g. evaporation, pulsed laser deposition, wet chemistry, etc.). Intermediate steps result in a lift-off layer attached to the lift-off substrate, that allow for separating the product from the original substrate.

Abstract: A method of: providing one or more spent sputtering targets comprising a photovoltaic compound and grinding the photovoltaic compound in an inert environment to form a powder.

Abstract: An article made by: depositing a bottom contact onto a flexible glass substrate, and depositing a photovoltaic material on the bottom contact.

Abstract: A method of containing molten aluminum using non-wetting materials comprising depositing MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, onto a crucible. An apparatus for containment of molten aluminum using non-wetting materials comprising a layer of MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, deposited onto a crucible.

Abstract: A method of forming a CZT(S,Se) thin film from a quaternary target involves sputtering a quaternary target onto a substrate, wherein the quaternary target comprises (a) copper, (b) zinc, (c) tin, and (d) selenium and/or sulfur, wherein each component (a) through (d) is present in the quaternary target within ±50% of a 2:1:1:4 molar ratio, respectively, thereby forming a CZT(S,Se) thin film on the substrate, wherein the CZT(S,Se) thin film has a kesterite crystalline phase and a band gap of about 1.0 to 1.5 eV. In an embodiment, a ternary target is employed.

Abstract: A method for forming a photovoltaic device by depositing at least one wetting layer onto a substrate where the wetting layer is ?100 nm and sputtering a photovoltaic material onto the wetting layer where the wetting layer interacts with the photovoltaic material. Also disclosed is the related photovoltaic device made by this method. The wetting layer may comprise any combination of In2Se3, CuSe2, Cu2Se, Ga2Se3, In2S3, CuS2, Cu2S, Ga2S3, CuInSe2, CuGaSe2, InxGa2-xSe3 where 0?x?2, CuInS2, CuGaS2, InxGa2-xS3 where 0?x?2, In2Se3-xSx where 0?x?3, CuSe2-xSx where 0?x?2, Cu2Se1-xSx, (0?x?1), Ga2Se3-xSx where 0?x?3, and InxGa2-xS3-ySy where 0?x?2, 0?y?3. The photovoltaic material may be a CIGS (copper indium gallium diselenide) material or a variation of a CIGS material where a CIGS component is replaced or supplemented with any combination of sulfur, tellurium, aluminum, and silver.

Abstract: A furniture member adapted to act as a versatile headboard is disclosed. The furniture member has a substantially vertical back member, two side members, a substantially vertical, lower front member and an angled front member collectively defining an interior space with the angled front member extending upward at a slope between the front lower member and a top edge of the vertical back member. The furniture member is placed against a mattress and box spring arrangement allowing people on the mattress to sit up by leaning against the angled front member. Adjustment of the angled front member is also disclosed. Use of the furniture member permits people to comfortably read, eat, use a laptop and conduct various other activities while in seated in bed. The furniture member also provides storage space.