Abstract: Non-volatile (NV) Multi-time programmable (MTP) memory cells are presented. The memory cell includes a substrate and first and second wells in the substrate. The memory cell includes first transistor having a select gate, second transistor having a floating gate adjacent to one another and on the second well, and third transistor having a control gate on the first well. The control gate is coupled to the floating gate and the control and floating gates include the same gate layer extending across the first and second wells. The transistors include first and second diffusion regions disposed adjacent to sides of the gates. The first and second diffusion regions include base lightly doped drain (LDD) and halo regions. One of the first and second diffusion regions of one of the second and third transistors includes second LDD and halo regions having higher dopant concentrations than the base LDD and halo regions.

Abstract: Phase-change memory structures are formed with ultra-thin heater liners and ultra-thin phase-change layers, thereby increasing heating capacities and lowering reset currents. Embodiments include forming a first interlayer dielectric (ILD) over a bottom electrode, removing a portion of the first ILD, forming a cell area, forming a u-shaped heater liner within the cell area, forming an interlayer dielectric structure within the u-shaped heater liner, the interlayer dielectric structure including a protruding portion extending above a top surface of the first ILD, forming a phase-change layer on side surfaces of the protruding portion and/or on the first ILD surrounding the protruding portion, and forming a dielectric spacer surrounding the protruding portion.

Abstract: Methods and compounds effective in ameliorating conditions characterized by unwanted calcium channel activity, particularly unwanted T-type calcium channel activity are disclosed. Specifically, a series of compounds containing N-piperidinyl acetamide derivatives as shown in formula (1).

Abstract: Methods and compounds effective in ameliorating conditions characterized by unwanted calcium channel activity, particularly unwanted T-type calcium channel activity are disclosed. Specifically, a series of compounds containing N-piperidinyl acetamide derivatives as shown in formula (1).

Abstract: Resistive random-access memory (RRAM) structures are formed with ultra-thin RRAM-functional layers, thereby improving memory margins. Embodiments include forming an interlayer dielectric (ILD) over a bottom electrode, forming a sacrificial layer over the ILD, removing a portion of the ILD and a portion of the sacrificial layer vertically contiguous with the portion of the ILD, forming a cell area, forming a metal layer within the cell area, forming an interlayer dielectric structure above or surrounded by and protruding above the metal layer, a top surface of the interlayer dielectric structure being coplanar with a top surface of the sacrificial layer, removing the sacrificial layer, forming a memory layer on the ILD and/or on side surfaces of the interlayer dielectric structure, and forming a dielectric layer surrounding at least a portion of the interlayer dielectric structure.

Abstract: Methods and compounds effective in ameliorating conditions characterized by unwanted calcium channel activity, particularly unwanted T-type calcium channel activity are disclosed. Specifically, a series of compounds containing N-piperidinyl acetamide derivatives as shown in formula (1).

Abstract: Methods and compounds effective in ameliorating conditions characterized by unwanted calcium channel activity, particularly unwanted T-type calcium channel activity are disclosed. Specifically, a series of compounds containing N-piperidinyl acetamide derivatives as shown in formula (1).

Abstract: A split gate memory cell is fabricated with a fin structure between a memory gate stack and a select gate. Embodiments include a first channel region under the memory gate stack and a second channel region under the select gate.

Abstract: A split gate memory cell is fabricated with a word gate extending below an upper surface of a substrate having the channel region. An embodiment includes providing a band engineered channel with the word gate extending there through. Another embodiment includes forming a buried channel with the word gate extending below the buried channel.

Abstract: A split gate memory cell is fabricated with a dielectric spacer comprising a high-k material between the word gate and the memory gate stack. Embodiments include memory cells with a dielectric spacer comprising low-k and high-k layers. Other embodiments include memory cells with an air gap between the word gate and the memory gate stack.

Abstract: The threshold voltage of parasitic transistors formed at corners of shallow trench isolation regions is increased and mobility decreased by employing a high-K dielectric material. Embodiments include STI regions comprising a liner of a high-K dielectric material extending proximate trench corners. Embodiments also include STI regions having a recess formed in the trench, wherein the recess contains a high-K dielectric material, in the form of a layer or spacer, extending proximate trench corners.

Abstract: A Fin FET SONOS device is formed with a full buried channel. Embodiments include forming p-type silicon fins protruding from a first oxide layer, an n-type silicon layer over exposed surfaces of the fins, a second oxide layer, a nitride layer, and a third oxide layer sequentially on the n-type silicon layer, and a polysilicon layer on the third oxide layer. Embodiments include etching a silicon layer to form the fins and forming the oxide on the silicon layer. Different embodiments include: etching a silicon layer on a BOX layer to form the fins; forming the fins with a rounded top surface; and forming nano-wires surrounded by an n-type silicon layer, a first oxide layer, a nitride layer, a second oxide layer, and a polysilicon layer over a BOX layer.

Abstract: An apparatus and method for redirecting fluid flow in a plenum provides flow performance (quality), structural, and economic advantages by using an array of flat blades that is mounted at an angle with respect to the inlet (upstream) fluid flow, such that the blades are tilted with respect to that flow and correspondingly redirect the flow in a desired direction. The apparatus, also referred to as a “GSG” or “graduated straightening grid,” has a range of applications, and offers a number of performance, structural, and economic advantages in large-scale applications. As a particular, but non-limiting example, one or more embodiments of the flow-redirecting apparatus taught herein are configured for use in Selective Catalytic Reduction (SCR) systems where catalytic reactors are used for scrubbing industrial flue gases.

Abstract: Methods and compounds effective in ameliorating conditions characterized by unwanted calcium channel activity, particularly unwanted T-type calcium channel activity are disclosed. Specifically, a series of compounds containing thienopyrimidine or oxoquinazoline derivatives are disclosed of the general formula (1) or formula (2) where X is a linker and Y is an aromatic moiety or N(R5)(R6).

Abstract: There is provided a portable storage container with cable management functionality, including: a case constructed from a rigid material with a first extent and a second extent in an adjacent relationship therewith, the first and second extent each defining an interior space for the placement of at least one speaker driver in at least one extent, the at least one speaker driver being connected through a cable with a connector, rear portions of the first and second extent being pivotally coupled together, at least one extent having an extended rim along an edge of the interior space, the rim defining a groove along the edge of the interior space, the groove being used for aligning the cable, and a fastener for fastening edges of the first and second extent. The fastener may feed the cable into the groove when fastening the edges of the first and second extent. A corresponding method for managing at least one cable in a portable storage container is also disclosed.

Abstract: Methods and compounds effective in ameliorating conditions characterized by unwanted calcium channel activity, particularly unwanted T-type calcium channel activity are disclosed. Specifically, a series of compounds containing 4-(aminomethyl)cyclohexanamine derivatives as shown in formula (1).

Abstract: Methods and compounds effective in ameliorating conditions characterized by unwanted calcium channel activity, particularly unwanted T-type calcium channel activity are disclosed. Specifically, a series of compounds containing N-piperidinyl acetamide derivatives as shown in formula (1).

Abstract: An apparatus and method for redirecting fluid flow in a plenum provides flow performance (quality), structural, and economic advantages by using an array of flat blades that is mounted at an angle with respect to the inlet (upstream) fluid flow, such that the blades are tilted with respect to that flow and correspondingly redirect the flow in a desired direction. The apparatus, also referred to as a “GSG” or “graduated straightening grid,” has a range of applications, and offers a number of performance, structural, and economic advantages in large-scale applications. As a particular, but non-limiting example, one or more embodiments of the flow-redirecting apparatus taught herein are configured for use in Selective Catalytic Reduction (SCR) systems where catalytic reactors are used for scrubbing industrial flue gases.

Abstract: Methods and compounds effective in ameliorating conditions characterized by unwanted calcium channel activity, particularly unwanted T-type calcium channel activity are disclosed. Specifically, a series of compounds containing thienopyrimidine or oxoquinazoline derivatives are disclosed of the general formula (1) or formula (2) where X is a linker and Y is an aromatic moiety or N(R5)(R6).