Abstract: A data storage device may include an interface that is arranged and configured to interface with a host, a command bus, multiple memory devices that are operably coupled to the command bus and a controller that is operably coupled to the interface and to the command bus. The controller may be arranged and configured to receive a read metadata command for a specified one of the memory devices from the host using the interface, read metadata from the specified memory device and communicate the metadata to the host using the interface.

Abstract: An apparatus for error correction for a data storage device may include an input interface that is configured to receive individual error correction requests to correct data from multiple channel controllers and that is configured to receive error correction information corresponding to the error correction requests, where each of the channel controllers is arranged and configured to control operations associated with one or more memory chips. The apparatus may include a corrector module that is operably coupled to the input interface and that is arranged and configured to perform error correction using an error correction algorithm and the error correction information to generate correction solutions, where the corrector module is a shared resource for the multiple channel controllers. The apparatus may include an output interface that is operably coupled to the corrector module and that is arranged and configured to communicate the correction solutions to the channel controllers.

Abstract: A data storage device may include a command bus, a status bus, multiple memory devices that are operably coupled to the command bus and to the status bus, and a controller including multiple channel controllers, where the channel controllers are operably coupled to the command bus and to the status bus and each of the channel controllers is arranged and configured to control one or more of the memory devices. The data storage device may include multiple programmable logic devices that are operably coupled to the status bus, where each of the programmable logic devices is configured to retrieve a ready/busy signal from each of the memory devices under control of one of the channel controllers using the status bus, serialize the ready/busy signals and communicate the serialized ready/busy signals to the channel controllers.

Abstract: A data storage device may include a first memory board and a second memory board, where the first memory board and the second memory board each comprise multiple memory chips. The data storage device may include a controller board that is arranged and configured to operably connect to the first memory board and the second memory board, where the controller board includes a high speed interface and a controller that is arranged and configured to receive commands from a host using the high speed interface and to execute the commands, where the first memory board and the second memory board are each separately removable from the controller board.

Abstract: Embodiments of the present invention describe a method of fabricating low resistance contact layers on a semiconductor device. The semiconductor device comprises a substrate having source and drain regions. The substrate is alternatingly exposed to a first precursor and a second precursor to selectively deposit an amorphous semiconductor layer onto each of the source and drain regions. A metal layer is then deposited over the amorphous semiconductor layer on each of the source and drain regions. An annealing process is then performed on the substrate to allow the metal layer to react with amorphous semiconductor layer to form a low resistance contact layer on each of the source and drain regions. The low resistance contact layer on each of the source and drain regions can be formed as either a silicide layer or germanide layer depending on the type of precursors used.

Abstract: The present invention provides a solid material comprising a solid substrate having a thin metal film and methods for producing the same. The method generally involves using a plurality self-limiting reactions to control the thickness of the metal film.

Abstract: Silicon dioxide (SiO2) films are deposited at room temperature using a chemical vapor deposition (CVD) reaction catalyzed by ammonia or a Lewis base. The SiO2 film growth is accomplished through the reaction of water and certain silicon precursors. Examples of these reactions include the SiCl4+2H2O→SiO2+4HCl or Si(OR)4+2H2O→SiO2+4ROH reactions and catalyzed with ammonia (NH3) or other Lewis bases. The NH3 catalyst lowered the required temperature for SiO2 CVD from >900 K to 313-333 K and reduced the SiCl4 and H2O pressures required for efficient SiO2 CVD from several Torr to <500 mTorr.

Abstract: Silicon dioxide (SiO2) films are deposited at room temperature using a chemical vapor deposition (CVD) reaction catalyzed by ammonia or a Lewis base. The SiO2 film growth is accomplished through the reaction of water and certain silicon precursors. Examples of these reactions include the SiCl4+2H2O→SiO2+4HCl or Si(OR)4+2H2O→SiO2+4ROH reactions and catalyzed with ammonia (NH3) or other Lewis bases. The NH3 catalyst lowered the required temperature for SiO2 CVD from >900 K to 313-333 K and reduced the SiCl4 and H2O pressures required for efficient SiO2 CVD from several Torr to <500 mTorr.

Abstract: A modified zeolite or molecular sieve membrane for separation of materials on a molecular scale. The modified membrane is fabricated to wholly or partially block regions between zeolite crystals to inhibit transfer of larger molecules through the membrane, but without blocking or substantially inhibiting transfer of small molecules through pores in the crystalline structure. The modified membrane has a monomolecular layer deposited on the zeolite surface which has coordinated groups of atoms that include (i) a metal atom bonded to oxygen atoms that are bonded to the zeolite substrate atoms (e.g., silicon atoms) and (ii) either hydroxyl groups bonded to the metal atoms or additional oxygen atoms bonded to the metal atoms.

Abstract: A process for modifying surfaces of zeolites and molecular sieve membranes to decrease effective pore size for separation of materials includes atomic layer controlled vapor or liquid deposition. The atomic layer controlled deposition process steps include (i) exposing the surface to a metal atom coordinated with ligand groups having bonds that are hydrolyzable to form molecular bonded structures on the surface, which structures comprise the metal atoms coordinated with the ligand group or a modified ligand group and then (ii) hydrolyzing the bonds and possibly, but not necessarily, cross-linking the bonds in the ligand or modified ligand group.