Abstract: An improved interconnect substrate having high density routings for a chip package assembly, a chip package assembly having a high density substrate, and methods for fabricating the same are provided that utilize substrates having a region of high density routings disposed over a region of low density routings. In one example, a method for fabricating an interconnect substrate is provided that includes forming a high density routing region by depositing a seed layer on a top surface of a low density routing region, patterning a mask layer on the seed layer, forming a plurality of conductive posts on the seed layer, removing the mask layer and the seed layer exposed between the conductive posts, and depositing a dielectric layer between the between the conductive posts, wherein at least some of the conductive posts are electrically coupled to conductive routing comprising the low density routing region.

Abstract: An electronic device and method for fabricating the same are disclosed herein. In one example the electronic device includes a substrate, a first die stack, and a second die stack. The first die stack includes a first functional die and a first dummy die. The first functional die is mounted to the substrate. The second stack includes a plurality of serially stacked second functional dies mounted to the substrate. The first dummy die is stacked on the first functional die. The first dummy die has a top surface that is substantially coplanar with a top surface of the second die stack. In one particular example, the first die stack includes a logic die and the second die stack includes a plurality of serially stacked memory dies.

Abstract: An electronic device and method for fabricating the same are disclosed herein. In one example the electronic device includes a substrate, a first die stack, and a second die stack. The first die stack includes a first functional die and a first dummy die. The first functional die is mounted to the substrate. The second stack includes a plurality of serially stacked second functional dies mounted to the substrate. The first dummy die is stacked on the first functional die. The first dummy die has a top surface that is substantially coplanar with a top surface of the second die stack. In one particular example, the first die stack includes a logic die and the second die stack includes a plurality of serially stacked memory dies.

Abstract: An improved interconnect substrate having high density routings for a chip package assembly, a chip package assembly having a high density substrate, and methods for fabricating the same are provided that utilize substrates having a region of high density routings disposed over a region of low density routings. In one example, a method for fabricating an interconnect substrate is provided that includes forming a high density routing region by depositing a seed layer on a top surface of a low density routing region, patterning a mask layer on the seed layer, forming a plurality of conductive posts on the seed layer, removing the mask layer and the seed layer exposed between the conductive posts, and depositing a dielectric layer between the between the conductive posts, wherein at least some of the conductive posts are electrically coupled to conductive routing comprising the low density routing region.

Abstract: A chip package assembly and method for fabricating the same are provided which utilize a plurality of extra-die heat transfer posts for improved thermal management. In one example, a chip package assembly is provided that includes a first integrated circuit (IC) die mounted to a substrate, a cover disposed over the first IC die, and a plurality of extra-die conductive posts disposed between the cover and substrate. The extra-die conductive posts provide a heat transfer path between the cover and substrate that is laterally outward of the first IC die.

Abstract: Methods and apparatus are described for enabling copper-to-copper (Cu—Cu) bonding at reduced temperatures (e.g., at most 200° C.) by significantly reducing Cu oxide formation. These techniques provide for faster cycle time and entail no extraordinary measures (e.g., forming gas). Such techniques may also enable longer queue (Q) or staging times. One example semiconductor structure generally includes a semiconductor layer, an adhesion layer disposed above the semiconductor layer, an anodic metal layer disposed above the adhesion layer, and a cathodic metal layer disposed above the anodic metal layer. An oxidation potential of the anodic metal layer may be greater than an oxidation potential of the cathodic metal layer. Such a semiconductor structure may be utilized in fabricating IC packages implementing 2.5D or 3D integration.

Abstract: An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is embodied in a wafer that includes a substrate having a plurality of integrated circuit (IC) dice formed thereon. The plurality of IC dice include a first IC die having first solid state circuitry and a second IC die having second solid state circuitry. A first contact pad is disposed on the substrate and is coupled to the first solid state circuitry. A first solder ball is disposed on the first contact pad. The first solder ball has a substantially uniform oxide coating formed thereon.

Abstract: Integrated (IC) package testing systems and methods for testing an IC package are provided herein that accommodate IC packages having different die heights. In one example, the IC package testing system includes a test fixture base, a socket, and a test fixture head. The socket is disposed on the test fixture base and configured to receive an IC package for testing. The test fixture head is movable towards and away from the base. The test fixture head includes a base plate and a plurality of independently movable pushers. The plurality of pushers are configured to engage the IC package disposed the socket.

Abstract: Methods and apparatus are described for heat management in an integrated circuit (IC) package using a lid with recessed areas in the inner surfaces of the lid. The recessed areas (e.g., trenches) provide receptacles for accepting a portion of a thermal interface material (TIM) that may be forced out when the lid is positioned on the TIM above one or more integrated circuit (IC) dies during fabrication of the IC package. In this manner, the TIM bond line thickness (BLT) between the lid and the IC die(s) may be reduced for decreased thermal resistance, but sufficient interfacial adhesion is provided for the IC package with such a lid to avoid TIM delamination.

Abstract: An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is provided that includes a first substrate containing first circuitry, a first contact pad, a first pillar, a first pillar protection layer, a second substrate containing second circuitry, and a solder ball disposed on the first pillar and electrically and mechanically coupling the first substrate to the second substrate. The first contact pad is disposed on the first substrate and coupled to the first circuitry. The first pillar electrically disposed over the first contact pad. The first pillar protection layer is hydrophobic to solder and is disposed on a side surface of the first pillar.

Abstract: A chip package and method of fabricating the same are described herein. The chip package includes a high speed data transmission line that has an inter-die region through which a signal transmission line couples a first die to a second die. The signal transmission line has a resistance greater than an equivalent base resistance (EBR) of a copper line, which reduces oscillation within the transmission line.

Abstract: An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is provided that includes a package substrate having a plurality of solder balls coupled to a plurality of contact pads. The package substrate includes a solder mask having a plurality of stepped openings, a plurality of contact pads, and circuitry disposed in the package substrate and coupled to the plurality of contact pads. The solder mask defines a top side of the package substrate. The stepped openings expose the contact pads through solder mask.

Abstract: An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is provided that includes a first substrate containing first circuitry, a first contact pad, a first pillar, a first pillar protection layer, a second substrate containing second circuitry, and a solder ball disposed on the first pillar and electrically and mechanically coupling the first substrate to the second substrate. The first contact pad is disposed on the first substrate and coupled to the first circuitry. The first pillar electrically disposed over the first contact pad. The first pillar protection layer is hydrophobic to solder and is disposed on a side surface of the first pillar.

Abstract: A chip package assembly and method for fabricating the same are provided which utilize a conformal lid to improve the chip package assembly from deformation. In one example, a chip package assembly is provided that includes integrated circuit (IC) dies, a packaging substrate, and a lid. The packaging substrate has a die receiving area that is defined by the laterally outermost extents of the IC dies mounted to the packaging substrate. The lid a surface that includes a first region and a second region. The first region is disposed over the first IC die while the second region of the lid extends below the second surface the first IC die and is spaced above the packaging substrate. At least a portion of the second region of the lid is overlapped with the die receiving area.

Abstract: Methods and apparatus are described for heat management in an integrated circuit (IC) package using a lid with recessed areas in the inner surfaces of the lid. The recessed areas (e.g., trenches) provide receptacles for accepting a portion of a thermal interface material (TIM) that may be forced out when the lid is positioned on the TIM above one or more integrated circuit (IC) dies during fabrication of the IC package. In this manner, the TIM bond line thickness (BLT) between the lid and the IC die(s) may be reduced for decreased thermal resistance, but sufficient interfacial adhesion is provided for the IC package with such a lid to avoid TIM delamination.

Abstract: An example clamping assembly tray for packaging a semiconductor device includes a frame having a bottom surface and side walls extending from the bottom surface that define a cavity; and a compressible member disposed on the bottom surface of the frame within the cavity, where a top portion of the compressible member provides a support surface for supporting the semiconductor device, the support surface being between the bottom surface and a top edge of the side walls.

Abstract: Methods and apparatus are described for enabling copper-to-copper (Cu—Cu) bonding at reduced temperatures (e.g., at most 200° C.) by significantly reducing Cu oxide formation. These techniques provide for faster cycle time and entail no extraordinary measures (e.g., forming gas). Such techniques may also enable longer queue (Q) or staging times. One example semiconductor structure generally includes a semiconductor layer, an adhesion layer disposed above the semiconductor layer, an anodic metal layer disposed above the adhesion layer, and a cathodic metal layer disposed above the anodic metal layer. An oxidation potential of the anodic metal layer may be greater than an oxidation potential of the cathodic metal layer. Such a semiconductor structure may be utilized in fabricating IC packages implementing 2.5D or 3D integration.

Abstract: Integrated (IC) package testing systems and methods for testing an IC package are provided herein that accommodate IC packages having different die heights. In one example, the IC package testing system includes a test fixture base, a socket, and a test fixture head. The socket is disposed on the test fixture base and configured to receive an IC package for testing. The test fixture head is movable towards and away from the base. The test fixture head includes a base plate and a plurality of independently movable pushers. The plurality of pushers are configured to engage the IC package disposed the socket.

Abstract: An example clamping assembly tray for packaging a semiconductor device includes a frame having a bottom surface and side walls extending from the bottom surface that define a cavity; and a compressible member disposed on the bottom surface of the frame within the cavity, where a top portion of the compressible member provides a support surface for supporting the semiconductor device, the support surface being between the bottom surface and a top edge of the side walls.

Abstract: A chip package assembly and method for fabricating the same are provided which utilize a conformal lid to improve the chip package assembly from deformation. In one example, a chip package assembly is provided that includes integrated circuit (IC) dies, a packaging substrate, and a lid. The packaging substrate has a die receiving area that is defined by the laterally outermost extents of the IC dies mounted to the packaging substrate. The lid a surface that includes a first region and a second region. The first region is disposed over the first IC die while the second region of the lid extends below the second surface the first IC die and is spaced above the packaging substrate. At least a portion of the second region of the lid is overlapped with the die receiving area.