Abstract: Apparatus and methods for precision mixed-signal electronic circuit protection are provided. In one embodiment, an apparatus includes a p-well, an n-well, a poly-active diode structure, a p-type active region, and an n-type active region. The poly-active diode structure is formed over the n-well, the p-type active region is formed in the n-well on a first side of the poly-active diode structure, and the n-type active region is formed along a boundary of the p-well and the n-well on a second side of the poly-active diode structure. During a transient electrical event the apparatus is configured to provide conduction paths through and underneath the poly-active diode structure to facilitate injection of carriers in the n-type active region. The protection device can further include another poly-active diode structure formed over the p-well to further enhance carrier injection into the n-type active region.

Abstract: A switching device for heterojunction integrated circuits is disclosed. According to one aspect, the switching device is configured to protect a circuit from an electro-static discharge (ESD) event. The switching device includes a second base contact region that is configured to be electrically floating, a first base contact region and a collector contact region that are coupled to a first input terminal of the switching device, and an emitter contact region that is coupled to a second input terminal of the switching device. Due in part to capacitive coupling between the first base contact region and the second base contact region, the switching device exhibits a low transient trigger voltage and a fast response to ESD events. Further, the switching device exhibits a high DC trigger voltage (for example, greater than 20V), while maintaining relatively low leakage current during operation (for example, less than about 0.5 ?A at 20V DC.

Abstract: A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.

Abstract: A semiconductor switch comprises a PNPN structure arranged to provide an SCR-like functionality, and a MOS gate structure, preferably integrated on a common substrate. The switch includes ohmic contacts for the MOS gate, and for the cathode and gate regions of the PNPN structure; the anode contact is intrinsic. A fixed voltage is typically applied to an external node. The MOS gate structure allows current to be conducted between the external node and the intrinsic anode when on, and the PNPN structure conducts the current from the anode to the cathode when an appropriate voltage is applied to the gate contact. Regenerative feedback keeps the switch on once it begins to conduct. The MOS gate inhibits the flow of current between the external node and anode—and thereby turns off the switch—when off. When on, the MOS gate's channel resistance serves as a ballast resistor.

Abstract: Harsh electrical environments integrated circuit protection for system-level robustness and methods of forming the same are provided. In one embodiment, a protection system includes dual-polarity high blocking voltage primary and secondary protection devices each electrically connected to a pad. The primary protection device has a current handling capability greater than a current handling capability of the secondary protection devices, and the secondary protection device has a turn-on speed that is faster than a turn-on speed of the primary protection device so as to decrease pad voltage overshoot when a fast transient electrical event occurs on the pad. Additionally, the holding voltage of the primary protection device is less than a holding voltage of the secondary protection device such that once the primary protection device has been activated the primary protection device clamps the pad voltage so as to minimize a flow of high current through the secondary protection device.

Abstract: A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.

Abstract: An apparatus and method for high voltage transient electrical overstress protection are disclosed. In one embodiment, the apparatus includes an internal circuit electrically connected between a first node and a second node; and a protection circuit electrically connected between the first node and the second node. The protection circuit is configured to protect the internal circuit from transient electrical overstress events while maintaining a relatively high holding voltage upon activation.

Abstract: An interface circuit for controlling a cross-domain signal link between a first circuit domain and a second circuit domain in a circuit may include first and second controllers, each of the first and second controllers including a first input coupled to a first voltage source of the first circuit domain and a second input coupled to a second voltage source of the second circuit domain.

Abstract: A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.

Abstract: A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.

Abstract: Apparatuses and methods for protecting electronic circuits are disclosed. In one embodiment, an apparatus for providing protection from transient signals comprises an integrated circuit, a pad on a surface of the integrated circuit, and a configurable protection circuit within the integrated circuit. The configurable protection circuit is electrically connected to the pad. The configurable protection circuit comprises a plurality of subcircuits arranged in a cascade, and selection of one or more of the plurality of the subcircuits for operation determines at least one of a holding voltage or a trigger voltage of the configurable protection circuit.

Abstract: Apparatuses and methods for providing transient electrical event protection are disclosed. In one embodiment, an apparatus comprises a detection and timing circuit, a current amplification circuit, and a clamping circuit. The detection and timing circuit is configured to detect a presence or absence of a transient electrical event at a first node, and to generate a first current for a first duration upon detection of the transient electrical event. The current amplification circuit is configured to receive the first current from the detection and timing circuit and to amplify the first current to generate a second current. The clamping circuit is electrically connected between the first node and a second node and receives the second current for activation. The clamping circuit is configured to activate a low impedance path between the first and second nodes in response to the second current, and to otherwise deactivate the low impedance path.

Abstract: Apparatuses and methods for electronic circuit protection are disclosed. In one embodiment, an apparatus comprises an internal circuit electrically connected between a first node and a second node, and a protection circuit electrically connected between the first node and the second node and configured to protect the internal circuit from transient electrical events. The protection circuit comprises a bipolar transistor having an emitter connected to the first node, a base connected to a third node, and a collector connected to a fourth node. The protection circuit further comprises a first diode electrically connected between the third node and the fourth node, and a second diode electrically connected between the second node and the fourth node. The first diode is an avalanche breakdown diode having an avalanche breakdown voltage lower than or about equal to a breakdown voltage associated with the base and the collector of the bipolar transistor.

Abstract: An interface circuit for controlling a cross-domain signal link between a first circuit domain and a second circuit domain in a circuit may include first and second controllers, each of the first and second controllers including a first input coupled to a first voltage source of the first circuit domain and a second input coupled to a second voltage source of the second circuit domain.

Abstract: Bi-directional blocking voltage protection devices and methods of forming the same are disclosed. In one embodiment, a protection device includes an n-well and first and second p-wells disposed on opposite sides of the n-well. The first p-well includes a first P+ region and a first N+ region and the second p-well includes a second P+ region and second N+ region. The device further includes a third P+ region disposed along a boundary of the n-well and the first p-well and a fourth P+ region disposed along a boundary of the n-well and the second p-well. A first gate is disposed between the first N+ region and the third P+ region and a second gate is disposed between the second N+ region and the fourth P+ region. The device provides bi-directional blocking voltage protection during high energy stress events, including in applications operating at very low to medium swing voltages.

Abstract: Apparatuses and methods for electronic circuit protection are disclosed. In one embodiment, an apparatus comprises a well having an emitter and a collector region. The well has a doping of a first type, and the emitter and collector regions have a doping of a second type. The emitter region, well, and collector region are configured to operate as an emitter, base, and collector for a first transistor, respectively. The collector region is spaced away from the emitter region to define a spacing. A first spacer and a second spacer are positioned adjacent the well between the emitter and the collector. A conductive plate is positioned adjacent the well and between the first spacer and the second spacer, and a doping adjacent the first spacer, the second spacer, and the plate consists essentially of the first type.

Abstract: Apparatus and methods for electronic circuit protection are disclosed. In one embodiment, an actively-controlled protection circuit includes a detector, a timer, a current source and a latch. The detector is configured to generate a detection signal when the detector determines that a transient signal satisfies a first signaling condition. The timer is configured to receive the detection signal, and to generate a current control signal. The current control signal is provided to a current source, which produces a trigger current at least partly in response to the control signal. The trigger current is provided to a node of the latch, thereby enhancing the conductivity modulation of the latch and selectively controlling the activation voltage of the latch.

Abstract: Metal oxide semiconductor (MOS) protection circuits and methods of forming the same are disclosed. In one embodiment, an integrated circuit includes a pad, a p-type MOS (PMOS) transistor, and first and second n-type MOS (NMOS) transistors. The first NMOS transistor includes a drain, a source and a gate electrically connected to the pad, a first supply voltage, and a drain of the PMOS transistor, respectively. The second NMOS transistor includes a gate, a drain, and a source electrically connected to a bias node, a second supply voltage, and a source of the PMOS transistor, respectively. The source of the second NMOS transistor is further electrically connected to a body of the PMOS transistor so as to prevent a current flowing from the drain of the PMOS transistor to the second supply voltage through the body of PMOS transistor when a transient signal event is received on the pad.

Abstract: Apparatus and methods for electronic circuit protection are disclosed. In one embodiment, an actively-controlled protection circuit includes a detector, a timer, a current source and a latch. The detector is configured to generate a detection signal when the detector determines that a transient signal satisfies a first signaling condition. The timer is configured to receive the detection signal, and to generate a current control signal. The current control signal is provided to a current source, which produces a trigger current at least partly in response to the control signal. The trigger current is provided to a node of the latch, thereby enhancing the conductivity modulation of the latch and selectively controlling the activation voltage of the latch.

Abstract: Apparatus and methods for integrated circuit protection are provided. In one embodiment, an integrated circuit (IC) includes a first pad, a second pad, a third pad, a first protection subcircuit coupled between the first pad and a common node, a second protection subcircuit coupled between the second pad and the common node, and a third protection subcircuit coupled between the third pad and the common node. The first, second, and third protection subcircuits each include one or more building blocks for maintaining the voltage of each of the pads within a predefined safe range, as well as to maintain the voltage between each of the pads within acceptable limits. A portion of the building blocks used to provide transient signal protection can be shared between pads, thereby reducing the area of the pad protection circuit relative to a scheme using a separate stack of building blocks for each pad.