Abstract: A semiconductor apparatus may include technology to identify two or more types of storage controller traffic, direct a first identified type of storage controller traffic along a fixed processing path, and direct a second type of storage controller traffic along a programmable processing path. Other embodiments are disclosed and claimed.

Abstract: Apparatus, systems, and methods to manage high capacity memory devices are described. In one example, a controller comprises logic to receive a write operation comprising payload data, a namespace identifier (ID) and a first extended logical block address (LBA), compute a first system cyclic redundancy check (CRC) using a payload CRC, the namespace ID and the first extended LBA, store the first system CRC in association with the first extended LBA in a local memory, and write the payload data, the first system CRC, and a truncated LBA derived from the first extended LBA to a memory. Other examples are also disclosed and claimed.

Abstract: Apparatus, systems, and methods to manage high capacity memory devices are described. In one example, a controller comprises logic to receive a write operation comprising payload data, a namespace identifier (ID) and a first extended logical block address (LBA), compute a first system cyclic redundancy check (CRC) using a payload CRC, the namespace ID and the first extended LBA, store the first system CRC in association with the first extended LBA in a local memory, and write the payload data, the first system CRC, and a truncated LBA derived from the first extended LBA to a memory. Other examples are also disclosed and claimed.

Abstract: Apparatus, systems, and methods to manage high capacity memory devices are described. In one example, a controller comprises logic to receive a write operation comprising payload data, a namespace identifier (ID) and a first extended logical block address (LBA), compute a first system cyclic redundancy check (CRC) using a payload CRC, the namespace ID and the first extended LBA, store the first system CRC in association with the first extended LBA in a local memory, and write the payload data, the first system CRC, and a truncated LBA derived from the first extended LBA to a memory. Other examples are also disclosed and claimed.

Abstract: When an error correction code (ECC) unit finds uncorrectable errors in a solid state non-volatile memory device, a process may be used in an attempt to locate and correct the errors. This process may first identify ‘low confidence’ memory cells that are likely to contain errors, and then determine what data is more likely to be correct in those cells, based on various criteria. The new data may then be checked with the ECC unit to verify that it is sufficiently correct for the ECC unit to correct any remaining errors.

Abstract: When an error correction code (ECC) unit finds uncorrectable errors in a solid state non-volatile memory device, a process may be used in an attempt to locate and correct the errors. This process may first identify ‘low confidence’ memory cells that are likely to contain errors, and then determine what data is more likely to be correct in those cells, based on various criteria. The new data may then be checked with the ECC unit to verify that it is sufficiently correct for the ECC unit to correct any remaining errors.