Abstract: Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is coupled to a coupling RF power source. A substrate support is disposed and movable within the process volume.

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Abstract: Aspects generally relate to systems, methods, and apparatus for applying a bias voltage to an ion blocker plate during substrate processing operations. In one aspect, the bias voltage is a negative direct current (DC) voltage. In one aspect, the bias voltage is a radio frequency (RF) voltage having a bias frequency of 2 MHz or less. In one implementation, a system for processing substrates includes a processing chamber. The processing chamber includes a processing volume, a pedestal positioned in the processing volume, and a lid assembly. The system includes a power line coupled to a faceplate of the lid assembly to supply a radio frequency (RF) power to the faceplate. The system includes a bias voltage line coupled to an ion blocker plate of the lid assembly to supply a bias voltage to the ion blocker plate.

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Abstract: A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract: A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.

Abstract: Embodiments of the present disclosure generally relate to clean methods for processing chambers, and more specifically relate to plasma clean methods for removing carbon films from surfaces within the processing chamber. A method for cleaning includes introducing a cleaning gas into a processing region within a processing chamber, where interior surfaces of the processing chamber have a coating containing amorphous carbon. The cleaning gas contains oxygen gas and a noble gas. The method also includes generating an ion coupled plasma (ICP) from the cleaning gas within an upper portion of the processing region and generating a bias across a substrate support in a lower portion of the processing region. The method further includes exposing the amorphous carbon to atomic oxygen ions produced from the oxygen gas and the ICP and removing the amorphous carbon from the interior surfaces with the atomic oxygen ions during a cleaning process.

Abstract: Embodiments of the present disclosure generally relate to semiconductor processing apparatus. More specifically, embodiments of the disclosure relate to an ICP process chamber. The ICP process chamber includes a chamber body and a lid disposed over the chamber body. The lid is fabricated from a ceramic material. The lid has a monolithic body, and one or more heating elements and one or more coils are embedded in the monolithic body of the lid. The number of components disposed over the lid is reduced with the one or more heating elements and one or more coils embedded in the lid. Furthermore, with the embedded one or more heating elements, the controlling of the thermal characteristics of the lid is improved.

Abstract: A plasma processing apparatus is provided including a radio frequency power source; a direct current power source; a chamber enclosing a process volume; and a substrate support assembly disposed in the process volume. The substrate support assembly includes a substrate support having a substrate supporting surface; an electrode disposed in the substrate support; and an interconnect assembly coupling the radio frequency power source and the direct current power source with the electrode.

Abstract: Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a processing chamber including a first RPS coupled to a lid of the processing chamber and a second RPS coupled to a side wall of the processing chamber. The first RPS is utilized for delivering deposition radicals into a processing region in the processing chamber and the second RPS is utilized for delivering cleaning radicals into the processing region. The processing chamber further includes a radical delivery ring disposed between a showerhead and a substrate support for delivering cleaning radicals from the second RPS into the processing region. Having separate RPSs for deposition and clean along with introducing radicals from the RPSs into the processing region using separate delivery channels minimizes cross contamination and cyclic change on the RPSs, leading to improved deposition rate drifting and particle performance.

Abstract: Embodiments of the present disclosure generally relate to methods for conditioning an interior wall surface of a remote plasma generator. In one embodiment, a method for processing a substrate is provided. The method includes exposing an interior wall surface of a remote plasma source to a conditioning gas that is in excited state to passivate the interior wall surface of the remote plasma source, wherein the remote plasma source is coupled through a conduit to a processing chamber in which a substrate is disposed, and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination thereof. The method has been observed to be able to improve dissociation/recombination rate and plasma coupling efficiency in the processing chamber, and therefore provides repeatable and stable plasma source performance from wafer to wafer.

Abstract: Embodiments of the present disclosure generally relate to a semiconductor processing apparatus. More specifically, embodiments of the disclosure relate to generating and controlling plasma. A process chamber includes a chamber body that includes one or more chamber walls and defines a processing region. The process chamber also includes two or more inductively driven radio frequency (RF) coils in a concentric axial alignment, the RF coils arranged near the chamber walls to strike and sustain a plasma inside the chamber body, where at least two of the two or more RF coils are in a recursive configuration.

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract: A voltage-current sensor enables more accurate measurement of the voltage, current, and phase of RF power that is delivered to high-temperature processing region. The sensor includes a planar body comprised of a non-organic, electrically insulative material, a measurement opening formed in the planar body, a voltage pickup disposed around the measurement opening, and a current pickup disposed around the measurement opening. Because of the planar configuration and material composition of the sensor, the sensor can be disposed proximate to or in contact with a high-temperature surface of a plasma processing chamber.

Abstract: Embodiments described herein include integrated systems used to directly monitor a substrate temperature during a plasma enhanced deposition process and methods related thereto. In one embodiment, a substrate support assembly includes a support shaft, a substrate support disposed on the support shaft, and a substrate temperature monitoring system for measuring a temperature of a substrate to be disposed on the substrate support. The substrate temperature monitoring system includes a optical fiber tube, a light guide coupled to the optical fiber tube, and a cooling assembly disposed about a junction of the optical fiber tube and the light guide. Herein, at least a portion of the light guide is disposed in an opening extending through the support shaft and into the substrate support and the cooling assembly maintains the optical fiber tube at a temperature of less than about 100° C. during substrate processing.

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract: Embodiments described herein include integrated systems used to directly monitor a substrate temperature during a plasma enhanced deposition process and methods related thereto. In one embodiment, a substrate support assembly includes a support shaft, a substrate support disposed on the support shaft, and a substrate temperature monitoring system for measuring a temperature of a substrate to be disposed on the substrate support. The substrate temperature monitoring system includes a optical fiber tube, a light guide coupled to the optical fiber tube, and a cooling assembly disposed about a junction of the optical fiber tube and the light guide. Herein, at least a portion of the light guide is disposed in an opening extending through the support shaft and into the substrate support and the cooling assembly maintains the optical fiber tube at a temperature of less than about 100° C. during substrate processing.

Abstract: A method and apparatus for a deposition chamber is provided and includes a twin chamber that includes a first remote plasma system coupled and dedicated to a first processing region, a second remote plasma system coupled and dedicated to a second processing region, and a third remote plasma system shared by the first processing region and the second processing region.

Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.