Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Abstract: A plasma source includes a plasma vessel that includes a dielectric material that encloses a cavity of a toroidal shape. The toroidal shape defines a toroidal axis therethrough. The vessel forms input and output connections, each of the input and output connections being in fluid communication with the cavity. One or more metal plates are disposed adjacent to the plasma vessel for cooling the plasma vessel. A magnetic core is disposed along the toroidal axis such that respective first and second ends of the magnetic core extend beyond axially opposed sides of the plasma vessel. First and second induction coils are wound about the respective first and second ends of the magnetic core. A plasma is generated in the cavity when an input gas is supplied through the input connection and an oscillating electrical current is supplied to the first and second induction coils.

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract: A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.

Abstract: A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.

Abstract: A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively.

Abstract: The substrate processing system has a factory interface module, a chemical mechanical polisher, a cleaner, a particle monitor and a substrate transfer system disposed as an integrated system. The factory interface module may includes a chamber a storage station located in a chamber of the module to hold a plurality of substrates in a substantially horizontal position. The storage station may hold pad break-in wafers for pad preconditioning and/or monitor wafers for defects monitoring. The particle monitor may have a port coupled to the factory interface module.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.

Abstract: The substrate processing system has a factory interface module, a chemical mechanical polisher, a cleaner, a particle monitor and a substrate transfer system disposed as an integrated system. The factory interface module may includes a chamber a storage station located in a chamber of the module to hold a plurality of substrates in a substantially horizontal position. The storage station may hold pad break-in wafers for pad preconditioning and/or monitor wafers for defects monitoring. The particle monitor may have a port coupled to the factory interface module.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: The disclosure discusses impedance matching circuits based on parallel-resonant L-C tank circuits, and describes a low-loss design for an adjustable inductance element suitable for use in these parallel tank circuits. The application of an impedance matching circuit to a plasma process is also disclosed; in this context, a local impedance transformation circuit is used to improve power transfer to the plasma source antenna.

Abstract: A plasma processing system including a plasma processing chamber; an antenna circuit including a source antenna positioned relative to the processing chamber so as to couple energy into a plasma within the chamber during processing, the antenna circuit having a first terminal and a second terminal with the source antenna electrically coupled between the first and second terminals; and a local impedance transforming network connected to the antenna circuit, the local impedance transforming network including a first capacitor connected between the first terminal and a grounded node, and a second capacitor connected between the second terminal and the grounded node.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: The disclosure discusses impedance matching circuits based on parallel-resonant L-C tank circuits, and describes a low-loss design for an adjustable inductance element suitable for use in these parallel tank circuits. The application of an impedance matching circuit to a plasma process is also disclosed; in this context, a local impedance transformation circuit is used to improve power transfer to the plasma source antenna.

Abstract: A method, and corresponding apparatus, for matching a generator impedance with an unknown and possibly changing load impedance, to maximize power transferred to the load. The apparatus includes an impedance matching network, and a network model, to estimate the load impedance from known present network values and a measurement of network input impedance, and to estimate optimum network values from the input impedance and the estimated load impedance. A controller computes new network values based on the present and optimum values, and outputs the new values to the network. The process is repeated using the new network values to estimate the load impedance and generate a new set of optimum values. The controller uses a control equation with parameters selected to ensure rapid convergence on the maximum-power condition, without overshoot or instability.