Abstract: A wireless local area network that utilizes a dynamically reconfigurable wireless network antenna that comprises at least one multi-layered RF module, said at least one RF module further comprising at least one RF connector for receipt of at least one RF signal and at least one layer of tunable dielectric material and one layer of metal fabricated into said RF module; an RF motherboard for acceptance of RF signals and distribution of the transmit energy to said RF module at the appropriate phases to generate a beam in the commanded direction and width; and a controller for determining the correct voltage signal to send to said at least one multi-layered RF module.

Abstract: In one aspect, a vacuum processing system comprising a vacuum processing chamber and a turbo-molecular pump disposed on the vacuum processing chamber is provided. The turbo-molecular pump comprises a casing having an inlet port and an outlet port, a stator disposed on an inner wall of the casing, a rotor disposed in the stator, and a motor extending coaxially with the rotor, wherein at least the first stage of the pump is enlarged with no correspondingly larger pump components other than the corresponding upper portion of the housing.

Abstract: In one aspect, a vacuum processing system comprising a vacuum processing chamber and a turbo-molecular pump disposed on the vacuum processing chamber is provided. The turbo-molecular pump comprises a casing having an inlet port and an outlet port, a stator disposed on an inner wall of the casing, a rotor disposed in the stator, and a motor extending coaxially with the rotor, wherein at least the first stage of the pump is enlarged with no correspondingly larger pump components other than the corresponding upper portion of the housing.

Abstract: Disclosed is a method for fabricating reliable interconnect structures on a semiconductor substrate that has at least a first dielectric layer, a first patterned metallization layer, a second dielectric layer over the first patterned metallization layer, and a plurality of tungsten plugs formed in the second dielectric layer. The method includes patterning a second metallization layer that overlies the second dielectric layer and the plurality of tungsten plugs, such that the patterning leaves at least one of the plurality of tungsten plugs not completely covered by the second metallization layer. Submersing the semiconductor substrate into a dilute nitric acid solution until a passivating tungsten oxide is formed over a portion of the at least one of the plurality of tungsten plugs that is not completely covered by the second metallization layer.

Abstract: A fan for moving a gaseous fluid, e.g., air, is described in which the high audible frequency noise resulting from the phenomenon occurring at the trailing edges of the blades, known as vortex shedding, is reduced. This is accomplished by notching an edge of each of the blades so that the pattern of vortices leaving the blade, which causes the noise, is disturbed and a turbulence condition engendered. The turbulence distributes the pressure fluctuations resulting from movement of the blades through the fluid over a relatively broad band of frequencies and reduces the annoying noise frequencies. Various notch configurations are disclosed.