Abstract: The present patent application relates to a device for a lithium electrochemical generator, said device comprising a band (100) of electrical insulating material including at least one polymer, and at least one metallic layer (102) which forms a current collector and is deposited on at least one of the two main faces in the central part of the band. The central part (100C) of the band comprises a plurality of holes (101) emerging on its two opposite main faces, said holes being filled at least partially with a metal that is continuous with each deposited metallic layer. The periphery of the band (100P) is devoid of metallic layer and at least one metallic layer is covered with an electrode of lithium insertion material.

Abstract: The present invention relates to a bipolar battery with at least two electrochemical cells stacked one above the other, each collector comprising at its periphery at least one bead of an electrical insulating material also constituting a peripheral zone of the electrolyte-leaktight wall. According to the invention, each leaktight wall is constituted of at least one bead consisting of a honeycomb matrix, the matrix being covered, on each of its two main faces, with a layer or leaf made of heat-sealing and electrically insulating material, each layer or leaf being heat-sealed to one of the current collectors, the heat-sealing and electrically insulating material filling at least partly the cells of the honeycomb while interconnecting the two layers or leafs.

Abstract: The present invention relates to a bipolar battery with at least two electrochemical cells stacked one above the other, each collector comprising at its periphery at least one bead of an electrical insulating material also constituting a peripheral zone of the electrolyte-leaktight wall. According to the invention, each leaktight wall is constituted of at least one bead consisting of a honeycomb matrix, the matrix being covered, on each of its two main faces, with a layer or leaf made of heat-sealing and electrically insulating material, each layer or leaf being heat-sealed to one of the current collectors, the heat-sealing and electrically insulating material filling at least partly the cells of the honeycomb while interconnecting the two layers or leafs.

Abstract: The present invention relates to a bipolar battery comprising at least two electrochemical cells (C1, C2) stacked on top of one another, each collector (13, 21) comprising on its periphery at least one bead (23) of an electrically insulating material also forming a peripheral zone of the wall impermeable to the electrolyte. According to the invention, each impermeable wall is obtained by a technique chosen from direct bonding, anodic bonding between a bead of the bipolar collector and the bead of the adjacent collector, and eutectic bonding between a layer made of metal or a eutectic metal alloy deposited on a bead of the bipolar collector and a layer made of metal or eutectic metal alloy deposited on a bead of the adjacent collector.

Abstract: The present patent application relates to a device for a lithium electrochemical generator, said device comprising a band (100) of electrical insulating material including at least one polymer, and at least one metallic layer (102) which forms a current collector and is deposited on at least one of the two main faces in the central part of the band. The central part (100C) of the band comprises a plurality of holes (101) emerging on its two opposite main faces, said holes being filled at least partially with a metal that is continuous with each deposited metallic layer. The periphery of the band (100P) is devoid of metallic layer and at least one metallic layer is covered with an electrode of lithium insertion material.

Abstract: The invention relates to a process for making at least one GeOI structure by germanium condensation of a SiGe layer supported by a layer of silicon oxide. The layer of silicon oxide is doped with germanium, the concentration of germanium in the layer of silicon oxide being such that it lowers the flow temperature of the layer of silicon oxide below the oxidation temperature allowing germanium condensation of the SiGe layer.

Abstract: A method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors.

Abstract: The substrate comprises a first silicon layer, a target layer made from silicon-germanium alloy-base material forming a three-dimensional pattern with first and second securing areas and at least one connecting area. The first silicon layer is tensile stressed and/or the target layer contains carbon atoms. The first silicon layer is eliminated in the connecting area. The target layer of the connecting area is thermally oxidized so as to form the nanowire. The lattice parameter of the first silicon layer is identical to the lattice parameter of the material constituting the suspended beam, after said first silicon layer has been eliminated.

Abstract: A method for making a germanium-on-insulator layer from an SGOI substrate, including: a) depositing on the substrate a layer of a metallic element M capable of selectively forming a silicide, the layer being in contact with a silicon-germanium alloy layer; and b) a reaction between the alloy layer and the layer of a metallic element M, by which a stack of M silicide-germanium-insulator layers is obtained. Such a method may, for example, find application to production of electronic devices such as MOSFET transistors.

Abstract: A method of manufacturing a semi-conductor on insulator substrate from an SOI substrate, wherein a Si1-xGex layer is formed on a superficial layer of silicon having a buried electrical insulating layer. A silicon oxide layer is formed on the Si1-xGex layer. The resulting stack of silicon, Si1-xGex and silicon oxide layers is etched up to the buried insulating layer leaving an island of the stack, or up to the superficial layer leaving a zone of silicon and an island of the stack. A mask is formed to protect against oxidation on the etched structure, wherein the protective mask only leaves visible the silicon oxide layer of the island. The germanium of the Si1-xGex layer is condensed on the island to obtain an island comprising a layer that is enriched in germanium, or even a layer of germanium, on the insulating layer, with a silicon oxide layer on top of it.

Abstract: The disclosure relates to a method for producing a microelectronic device including a plurality of Si1-yGey based semi-conducting zones (where 0<y?1) which have different respective Germanium contents, comprising the steps of: a) formation on a substrate covered with a plurality of Si1-yGey based semi-conducting zones (where 0<x<1 and x<y) and identical compositions, of at least one mask comprising a set of masking blocks, wherein the masking blocks respectively cover at least one semi-conducting zone of the said plurality of semi-conducting zones, wherein several of said masking blocks have different thicknesses and/or are based on different materials, b) oxidation of the semi-conducting zones of the said plurality of semi-conducting zones through said mask.

Abstract: The invention relates to a method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors.

Abstract: The substrate comprises a first silicon layer, a target layer made from silicon-germanium alloy-base material forming a three-dimensional pattern with first and second securing areas and at least one connecting area. The first silicon layer is tensile stressed and/or the target layer contains carbon atoms. The first silicon layer is eliminated in the connecting area. The target layer of the connecting area is thermally oxidized so as to form the nanowire. The lattice parameter of the first silicon layer is identical to the lattice parameter of the material constituting the suspended beam, after said first silicon layer has been eliminated.

Abstract: The fabrication method of a mixed substrate comprising a tensile strained silicon-on-insulator portion and a compressive strained germanium-on-insulator portion comprises a first step of producing a strained silicon-on-insulator base substrate comprising first and second tensile strained silicon zones. After the base substrate has been produced, the method comprises the successive steps of masking the first tensile strained silicon zone forming the tensile strained silicon-on-insulator portion of the substrate, of performing germanium enrichment treatment of the second tensile strained silicon zone of the base substrate until a compressive strained germanium layer is obtained forming said compressive strained germanium-on-insulator portion of the substrate, and of removing the masking.

Abstract: The invention relates to a process for making at least one GeOI structure by germanium condensation of a SiGe layer supported by a layer of silicon oxide. The layer of silicon oxide is doped with germanium, the concentration of germanium in the layer of silicon oxide being such that it lowers the flow temperature of the layer of silicon oxide below the oxidation temperature allowing germanium condensation of the SiGe layer.

Abstract: A method for making a germanium-on-insulator layer from an SGOI substrate, including: a) depositing on the substrate a layer of a metallic element M capable of selectively forming a silicide, the layer being in contact with a silicon-germanium alloy layer; and b) a reaction between the alloy layer and the layer of a metallic element M, by which a stack of M silicide-germanium-insulator layers is obtained. Such a method may, for example, find application to production of electronic devices such as MOSFET transistors.

Abstract: A method for manufacturing a semiconductor including the steps of supplying a substrate having a support with one face supporting a strained silicon thin layer; forming a first mask on a portion of the strained silicon thin layer; epitaxy of Si1-xGex on the portion of the layer not masked by the first mask; condensating germanium to obtain a strained germanium layer, the strained germanium layer then covered by a silicon oxide layer; eliminating the first mask and of the silicon oxide layer thereby exposing a semi-conducting thin layer; forming a second mask on the semi-conducting thin layer exposed via the previous step, the second mask protecting a region of the exposing a remaining strained germanium portion; epitaxial growing germanium on the remaining strained germanium portion; and removing the second mask.

Abstract: A method for producing a microelectronic device having one or more Si1?zGez based semiconductor wire(s) (with 0<z?1), including: a) thermal oxidation of at least a portion of a Si1?xGex-based semiconductor layer (with 0<x<1) resting on a support, so as to form at least one Si1?yGey-based semiconductor zone (with 0<y<1 and x<y), b) lateral thermal oxidation of the sides of one or more so-called semiconductor connection blocks from the Si1?yGey-based semiconductor zone and connecting a semiconductor block intended to form a transistor source region and another block intended to form a transistor drain region so as to reduce the semiconductor connection blocks in at least one direction parallel to the main plane of the support and to form one or more Si1?zGez-based semiconductor wire(s) (with 0<y<1 and y<z).

Abstract: A method for producing a microelectronic device comprising a plurality of Si1-yGey based semi-conductor zones (wherein 0<y?1) that have different respective Germanium contents.

Abstract: The invention relates to a manufacturing method of a semi-conductor on insulator substrate from an SOI substrate comprising a surface layer of silicon on an electrically insulating layer, called buried insulating layer, wherein a layer of Si1-xGex is formed on the superficial layer of silicon.