Abstract: The invention relates to the production of a stacked structure of planes of islands of a first semiconducting material encapsulated in a second semiconducting material on a substrate, comprising alternate deposition of planes of islands of a first semiconducting material and encapsulation layers of a second semiconducting material, the planes of islands of the first semiconducting material being made at an optimum growth temperature and at an optimum precursor gas partial pressure to result in a stacked structure for which the optical properties enable production of optoelectronic components to optically interconnect integrated circuits.

Abstract: The method includes the following steps: supplying a substrate comprising a support having one face made of a dielectric material supporting a strained silicon thin layer having a <110> or <111> orientation, formation of a first mask on a portion of the strained silicon thin layer, epitaxy of Si1?xGex on the portion of the layer not masked by the first mask, germanium condensation, until a strained germanium layer is obtained, which rests on the face of the support made of a dielectric material, the strained germanium layer then being covered by a silicon oxide layer, elimination of the first mask and of the silicon oxide layer, formation of a second mask on said semi-conducting thin layer exposed via the previous step, the second mask protecting a region of the remaining strained germanium portion and at least one region of the strained silicon portion, the second mask exposing a remaining strained germanium portion, epitaxial growth of germanium on the remaining strained germanium portion, in

Abstract: The microstructure is designed for formation of a silicon and germanium on insulator substrate of Si1-XfGeXf type, with Xf comprised between a first value that is not zero and 1. The microstructure is formed by stacking of a silicon on insulator substrate and a first initial layer of silicon and germanium alloy of Si1-X1GeX1 type, with X1 strictly comprised between 0 and Xf. The stack also comprises a second initial layer of silicon and germanium alloy of Si1-X2GeX2 type, with X2 comprised between a first value that is not zero and 1, and an intermediate layer, preferably made of silicon oxide or silicon nitride, that is able to remain amorphous during formation of the substrate and that is intercalated between the first initial layer of Si1-X1GeX1 and the second initial layer of Si1-X2GeX2.

Abstract: The fabrication method of a mixed substrate comprising a tensile strained silicon-on-insulator portion and a compressive strained germanium-on-insulator portion comprises a first step of producing a strained silicon-on-insulator base substrate comprising first and second tensile strained silicon zones. After the base substrate has been produced, the method comprises the successive steps of masking the first tensile strained silicon zone forming the tensile strained silicon-on-insulator portion of the substrate, of performing germanium enrichment treatment of the second tensile strained silicon zone of the base substrate until a compressive strained germanium layer is obtained forming said compressive strained germanium-on-insulator portion of the substrate, and of removing the masking.

Abstract: The disclosure relates to a method for producing a microelectronic device comprising one or more Si1-zGez-based semiconductor wire(s) (with 0<z?1), including the steps of: a) thermal oxidation of at least a portion of a Si1-xGex-based semiconductor layer (with 0<x<1) resting on a support, so as to form at least one Si1-yGey-based semiconductor zone (with 0<y<1 and x<y), b) lateral thermal oxidation of the sides of the second Si1-yGey-based semiconductor zone so as to reduce the second zone in at least one direction parallel to the main plane of the support and to form one or more Si1-zGez-based semiconductor wire(s) (with 0<y<1 and y<z).

Abstract: The disclosure relates a method for producing a microelectronic device including a plurality of based Si1-yGey semi-conductor zones (where 0<y?1) have different respective Germanium contents, comprising the steps of: a) formation on a plurality of Si based semi-conductor zones with different thicknesses resting on a substrate, of a Si1-yGey based semi-conductor layer (where 0<x<1 and x<y), b) oxidation of the Si1-yGey based semi-conductor layer.

Abstract: The disclosure relates to a method for producing a microelectronic device including a plurality of Si1-yGey based semi-conducting zones (where 0<y?1) which have different respective Germanium contents, comprising the steps of: a) formation on a substrate covered with a plurality of Si1-yGey based semi-conducting zones (where 0<x<1 and x<y) and identical compositions, of at least one mask comprising a set of masking blocks, wherein the masking blocks respectively cover at least one semi-conducting zone of the said plurality of semi-conducting zones, wherein several of said masking blocks have different thicknesses and/or are based on different materials, b) oxidation of the semi-conducting zones of the said plurality of semi-conducting zones through said mask.

Abstract: The microstructure is designed for formation of a silicon and germanium on insulator substrate of Si1-XfGeXf type, with Xf comprised between a first value that is not zero and 1. The microstructure is formed by stacking of a silicon on insulator substrate and a first initial layer of silicon and germanium alloy of Si1-X1GeX1 type, with X1 strictly comprised between 0 and Xf. The stack also comprises a second initial layer of silicon and germanium alloy of Si1-X2GeX2 type, with X2 comprised between a first value that is not zero and 1, and an intermediate layer, preferably made of silicon oxide or silicon nitride, that is able to remain amorphous during formation of the substrate and that is intercalated between the first initial layer of Si1-X1GeX1 and the second initial layer of Si1-X2GeX2.

Abstract: The method for producing a substrate comprising a silicon and germanium compound of Si1-XfGeXf type on insulator, with Xf comprised between a first value that is not zero and 1, comprises formation of a layer of silicon and germanium of Si1-XiGeXi type, with Xi strictly comprised between 0 and Xf, on a silicon on insulator substrate. The method then comprises a first step of thermal oxidation of the silicon of said layer at a predetermined first oxidation temperature to obtain said Si1-XfGeXf compound by condensation of the germanium. The first thermal oxidation step comprises at least one thermal treatment step under an inert gas at said predetermined first oxidation temperature. The method can for example comprise a second thermal oxidation step performed at a predetermined second oxidation temperature, different from the predetermined first oxidation temperature.

Abstract: A thin layer comprising at least a metal and a non-metallic chemical element is deposited on an oxidized layer of a substrate arranged in a reactor. The thin layer is formed by a plurality of superposed atomic layers formed by repetition of a reaction cycle comprising at least a first step of injecting a first halogenated metallic reagent into the reactor, a first reactor purging step, a second step of injecting a second reagent comprising the non-metallic chemical element into the reactor and a second reactor purging step. The process comprises, after each deposition of an atomic layer, at least one densification sequence of the atomic layer comprising a third purging step, an additional injection step of the second reagent and a fourth purging step. The time length of a densification sequence is substantially longer than the time length of a reaction cycle.

Abstract: The invention relates to the product ion of a stacked structure of planes of islands of a first semiconducting material encapsulated in a second semiconducting material on a substrate, comprising alternate deposition of planes of islands of a first semiconducting material and encapsulation layers of a second semiconducting material, the planes of islands of the first semiconducting material being made at an optimum growth temperature and at an optimum precursor gas partial pressure to result in a stacked structure for which the optical properties enable production of optoelectronic components to optically interconnect integrated circuits.

Abstract: A thin layer comprising at least a metal and a non-metallic chemical element is deposited on an oxidized layer of a substrate arranged in a reactor. The thin layer is formed by a plurality of superposed atomic layers formed by repetition of a reaction cycle comprising at least a first step of injecting a first halogenated metallic reagent into the reactor, a first reactor purging step, a second step of injecting a second reagent comprising the non-metallic chemical element into the reactor and a second reactor purging step. The process comprises, after each deposition of an atomic layer, at least one densification sequence of the atomic layer comprising a third purging step, an additional injection step of the second reagent and a fourth purging step. The time length of a densification sequence is substantially longer than the time length of a reaction cycle.