Abstract: Methods for purifying a compound of formula I are provided, wherein A, B, X, Q, and R1 are defined herein. The methods include mixing the compound of formula I and a solvent; adding a base to the solvent; and precipitating purified compound of formula I.

Abstract: Methods for purifying a compound of formula I are provided, wherein A, B, X, Q, and R1 are defined herein. The methods include mixing the compound of formula I and a solvent; adding a base to the solvent; and precipitating purified compound of formula I.

Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.

Abstract: A biometric device configured to be attached to a portion of a body of a user measures biometric data of the user. The device includes an optical emitter, a wavelength filter, an optical sensor and a processor, for sending a light to the body of a user, receiving light received from the user, filtering and processing it to measure biometric data of the user, including for example, heart rate and blood flow rate. In addition, the biometric device may include other sensors, such as a galvanic skin response sensor, an ambient temperature sensor, skin temperature, motion sensor, etc., to enable the biometric device to measure arousal or conductivity changing events, ambient temperature, user temperature and motion associated with the user. Additionally, information from each sensor may be used to further filter noise in one or more signals received by the sensors to provide biometric data to the user.

Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6.

Abstract: Alkylethoxylate alcohols or mixtures of alkyl alcohol ethoxylate with an average HLB value between 10 and 15 as compatibilizers for water blown polyurethane foam formulations that are substantially free of nonylphenol ethoxylates are disclosed. The HLB is defined as the mass percent of average structure of the compatibilizer that is hydrophilic, divided by 5. The compatiblilizer is mixed into the B-side of the polyurethane formulation. The B-side of the spray foam formulations comprise polyol, water, amine catalyst, and the compatibilizer of the invention such that the water is present at about 2% to about 30% by weight of the B-side formulation, and the compatibilizer is present at about 1% to about 30% by weight of the B-side formulation. The B-side of the formulation may further comprise metal catalysts, flame retardants, silicone surfactants, cell openers, antioxidants, as well as other additives.

Abstract: A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.

Abstract: A convenient preparation of boron-containing compounds, borate salts, pyrrolecarbonitrile boron-containing compounds, N-substituted-pyrrole-2-carbonitrile boron-containing compounds, and derivatives thereof is provided. The present invention also provides for the use of these boron-containing compounds and derivatives thereof in coupling reactions to provide bi-aryl compounds.

Abstract: Provided is a method for styling hair that includes contacting the hair with a compositions that includes a poly(vinylamine-vinylformamide) copolymer and conditioning agents, applying heat to the hair in an amount effective to at least semi-permanently style the hair, and styling the hair. The method of the present invention promotes improved hair styling properties such as improved curl retention or straightness retention, e.g., under conditions of high relative humidity and temperature. The method can be used for semi-permanently straightening or curling the hair.

Abstract: Provided is a method for styling mammalian hair that includes contacting the hair with a composition that includes a poly(vinylamine-vinylformamide) copolymer and a first carrier, contacting the hair with a composition that includes a bisulfite and a second carrier, and styling the hair. The method of the present invention promotes improved hair styling properties such as improved curl retention and straightness retention, e.g., under conditions of high relative humidity and temperature. The method can be used for semi-permanently straightening or curling the hair. Also provided is a method for controlling fizz by applying the copolymer and bisulfite compositions.

Abstract: Provided is a method for styling mammalian hair that includes contacting the hair with a composition that includes a poly(vinylamine-vinylformamide) copolymer and a first carrier, contacting the hair with a composition that includes a cysteine and a second carrier, and styling the hair. The method of the present invention promotes improved hair styling properties such as improved curl retention and straightness retention, e.g., under conditions of high relative humidity and temperature. The method can be used for semi-permanently straightening or curling the hair. Also provided is a method for controlling frizz by applying the copolymer and cysteine compositions.

Abstract: Provided is a method for styling mammalian hair that includes contacting the hair with a composition that includes a poly(vinylamine-vinylformamide) copolymer and a first carrier, contacting the hair with a composition that includes a citrate and a second carrier, and styling the hair. The method of the present invention promotes improved hair styling properties such as improved curl retention and straightness retention, e.g., under conditions of high relative humidity and temperature. The method can be used for semi-permanently straightening or curling the hair. Also provided is a method for controlling fizz by applying the copolymer and citrate compositions.

Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

Abstract: Micronized tanaproget, purified tanaproget Form I, and micronized, purified tanaproget Form I are provided. Also provided are compositions containing one or more of the prepared tanaproget forms, methods of using one or more of the prepared tanaproget forms, and kits containing one or more of the prepared tanaproget forms.

Abstract: Methods for purifying a compound of formula I are provided, wherein A, B, X, Q, and R1 are defined herein. The methods include mixing the compound of formula I and a solvent; adding a base to the solvent; and precipitating purified compound of formula I.

Abstract: Methods for purifying a compound of formula I are provided, wherein A, B X, Q, and R1 are defined herein. The methods include mixing the compound of formula I and a solvent; adding a base to the solvent; and precipitating purified compound of formula I.

Abstract: An audio encoding device (100) comprises first encoding means (101, 111) for encoding transient signal components and/or sinusoidal signal components of an audio signal (x(n)) and producing a residual signal (z(n)), and second encoding means for encoding the residual signal. The second encoding means comprise filter means (122) for selecting at least two frequency bands of the residual signal. The selected frequency bands (LF, HF) of the residual signal (z(n)) are encoded by a first encoding unit (123) and a second encoding unit (124) respectively. The first encoding unit (123) may comprise a waveform encoder, such as a time-domain encoder, while the second encoding unit (124) may comprise a noise encoder.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.