Abstract: A convenient preparation of boron-containing compounds, borate salts, pyrrolecarbonitrile boron-containing compounds, N-substituted-pyrrole-2-carbonitrile boron-containing compounds, and derivatives thereof is provided. The present invention also provides for the use of these boron-containing compounds and derivatives thereof in coupling reactions to provide bi-aryl compounds.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

Abstract: This invention relates to an improvement in a deposition process for producing low dielectric films having a dielectric constant of 3, preferably <2.7 and lower. The process comprises the steps: (a) forming a liquid precursor solution comprised of an organosilicon source containing both Si—O and Si—C bonds and solvent; (b) generating a liquid mist of said liquid precursor solution, said mist existing as precursor solution droplets having a number average droplet diameter size of less than 0.5 ?m; (c) preferably electrically charging the liquid mist of said liquid precursor solution droplets; (d) depositing liquid mist of said liquid precursor solution droplets onto a substrate; and, (e) converting the thus deposited liquid mist of said liquid precursor solution droplets to a solid, low dielectric film.

Abstract: A convenient preparation of boron-containing compounds, borate salts, pyrrolecarbonitrile boron-containing compounds, N-substituted-pyrrole-2-carbonitrile boron-containing compounds, and derivatives thereof is provided. The present invention also provides for the use of these boron-containing compounds and derivatives thereof in coupling reactions to provide bi-aryl compounds.

Abstract: A method and a circuit of execution, by a processing unit, of at least one patch of at least one first program stored in a first non-reprogrammable non-volatile memory, the patch being stored in a second memory, and wherein: each current address of an instruction of the first program provided by the processing unit is compared with values preloaded in at least one volatile storage element; in case of an identity between the current address and a preloaded value, an interrupt is triggered, this interrupt triggering a search, from a correspondence table, for an address of a patch in the second memory; and the patch is executed.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.

Abstract: The instant invention concerns processes for the production of pyrrole-2-carbonitriles such as 1-methylpyrrole-2-carbonitrile. Such processes preferably comprise the steps of reacting a pyrrole with chlorosulfonyl isocyanate in the presence of a solvent and contacting the resulting product with a molar excess of an amide such as N,N-dimethylformamide. The product of this contacting step is then contacted with a molar excess of an organic base to produce a precipitate and a solution phase. The precipitate is then separated from the solution phase and the corresponding pyrrole-2-carbonitrile is isolated from the resulting solution phase.

Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

Abstract: A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

Abstract: The present invention provides processes for the preparation of substituted naphthylindole derivatives that can be used as inhibitors of plasminogen activator inhibitor-1(PAI-1). In certain embodiments of the invention, the processes involve reactions that include one or more of an Oppenauer oxidation, a Fischer indole synthesis, a methyl ether cleavage, or coupling a substituted methyltetrazole with a substituted naphthol.

Abstract: The present invention is an apparatus for containing and dispensing a high purity fluid comprising an outer vessel capable of containing a quantity of high purity fluid in its interior; an outlet associated with the outer vessel for dispensing the high purity fluid; a valve capable of controlling high purity fluid flow out of the outer vessel through the outlet; an inner vessel at least partly situated in the outer vessel and communicating with the outlet and an inlet which communicates with the interior of the outer vessel; a purification media contained within the inner vessel for purifying the high purity fluid of undesired components; and fluid flow control device which prevents high purity fluid from flowing from the inner vessel to the interior of the outer vessel.

Abstract: Processes for coupling phenol and cycloalkyls including combining an optionally substituted phenol, a cycloalkyl substituted with a leaving group, carbonate salt, tetrahydrofuran, and an optional phase transfer agent are provided. Also provided are processes for preparing 3-cyclopentyloxy-4-methoxybenzaldehyde by combining 3-hydroxy-4-methoxybenzaldehyde, a cyclopentyl compound, a carbonate salt, a solvent, and an optional phase transfer agent.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

Abstract: A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additive, over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2 layer in said structure.

Abstract: Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. In one embodiment there is provided a CVD method that includes: providing a substrate within a vacuum chamber; introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.

Abstract: A method for providing a porous organosilica glass (OSG) film that consists of a single phase of a material represented by the formula SivOwCxHyFz, v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6 is disclosed herein. In one aspect of the present invention, the film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or alternatively bonded to, the precursors. The porogens are subsequently removed to provide the porous film. In another aspect of the present invention, porogenated precursors are used for providing the film.

Abstract: A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.

Abstract: The invention concerns an ellipsometer comprising a source (S) supplying at least an infrared radiation, a sample-holder (PE), a sensor (D), a first optical system mounted between the source (S) and the sample-holder (PE), so as to illuminate a sample placed on the sample-holder, under oblique view with a polarised light beam and a second optical system mounted between the sample-holder (PE) and the sensor (D) for collecting the light reflected by the sample. The ellipsometer further comprises a blocking device (F2) mounted on the reflection path in the focal plane of the focusing device (M2) of the second optical system, and adapted to block parasite rays (RP) derived from the rear surface (FAR) of the sample and to allow through useful rays (RU) derived from the front surface (FAV) of the sample towards the sensor (D), thereby enabling to obtain a resolution with respect to the sample front and rear surfaces.