Abstract: A phase shift circuit made from integrable semi-conductor elements. It comprises: a sampling stage formed by two MOS type transistors operating in phase opposition, which supply, from the input signal (S.sub.e), a sampled signal S.sub.ECH ; a first MOS type transistor which forms the phase shift element, receives signal S.sub.ECH on its gate and delivers two signals (S.sub.1 and S.sub.2), which are opposite in phase, at its drain and source respectively; two capacitors, which receive signals S.sub.1 and S.sub.2 respectively, and are associated with polarizing means containing MOS type transistors, which enable the original D.C. components of signals S.sub.1 and S.sub.2 to be replaced by the same D.C. component (V.sub.P).

Abstract: A differential charge-transfer device for transversal filtering or delay line applications. It comprises: two charge-transfer channels which respectively receive the two signals, the difference between which is to be formed; an electrode common to both channels; means for sampling the signals in each channel, this sampling taking place at the same instants in both channels; a set of electrodes in each channel which, on the application of potentials of period T, propagate the samples to the common electrode with a relative delay equal to T/2 from one channel to the other. The signal representing the difference between the input signals is extracted at the common electrode.

Abstract: A new method of manufacturing a two-phase charge-transfer device operating by the charge-coupled technique, in which the asymmetry means associated with each group of electrodes are constituted by impurity barriers implanted in the semiconductor substrate and are automatically positioned in relation to the electrodes, in particular by carrying out implantation operations through masks constituted by films of silicon nitride and by the electrodes themselves, the films of silicon nitride subsequently being completely removed.This method makes it possible to create linear charge-transfer registers and photo-sensitive matrices.

Abstract: A solid-state image device comprising a matrix of m linear transfer registers, each comprising n charge coupled cells analyzes an optical image projected on to it and converts it into n .times. m electrical charges stored in the n .times. m cells. The extraction of these charges is effected register by register using original control means.