Abstract: A device for multispectral imaging in the infrared, suitable for detecting at at least one first and one second detection wavelength is provided. It comprises a detection matrix array comprising a set of elementary detectors of preset dimensions forming an image field of given dimensions; and an image-forming optic having a given aperture number (N) and a given focal length (F), which aperture number and focal length are suitable for forming, at any point of the image field, an elementary focal spot covering a set of at least two juxtaposed elementary detectors.

Abstract: The invention relates to the chemical etching of a semiconductor material, including: deposition at least one mask (PLP) on a first surface zone of a semiconductor material (SC); and chemically etching (S31) a second surface zone of the semiconductor material (SC) that is not covered by the mask (PLP). In particular, the aforementioned mask is produced in a material including polyphosphazene, which material protects the underlying semiconductor especially well.

Abstract: A photovoltaic device comprising: a plurality of photovoltaic cells, separated from each other; a support receiving the cells; and a light guide in contact with the cells and comprising a primary guide with a surface that is proximal to the cells, where the proximal surface is oriented towards the cells and the support. The photovoltaic device comprises, between the cells, areas located between the support and the primary guide which comprise a material with an index of refraction less than that of the proximal surface, where the material is in contact with the proximal surface.

Abstract: A photodetector includes a Helmholtz resonator and a photosensitive structure that is placed in an electric-field-concentrating interval forming part of the Helmholtz resonator. Such a photodetector is in particular suitable for imaging applications. The wavelength of the radiation to be detected is determined by dimensions of the Helmholtz resonator, within a detection spectral interval of the photosensitive structure.

Abstract: The invention relates to the chemical etching of a semiconductor material, including: deposition at least one mask (PLP) on a first surface zone of a semiconductor material (SC); and chemically etching (S31) a second surface zone of the semiconductor material (SC) that is not covered by the mask (PLP). In particular, the aforementioned mask is produced in a material including polyphosphazene, which material protects the underlying semiconductor especially well.

Abstract: A device for multispectral imaging in the infrared, suitable for detecting at at least one first and one second detection wavelength is provided. It comprises a detection matrix array comprising a set of elementary detectors of preset dimensions forming an image field of given dimensions; and an image-forming optic having a given aperture number (N) and a given focal length (F), which aperture number and focal length are suitable for forming, at any point of the image field, an elementary focal spot covering a set of at least two juxtaposed elementary detectors.

Abstract: A photodetector includes a Helmholtz resonator and a photosensitive structure that is placed in an electric-field-concentrating interval forming part of the Helmholtz resonator. Such a photodetector is in particular suitable for imaging applications. The wavelength of the radiation to be detected is determined by dimensions of the Helmholtz resonator, within a detection spectral interval of the photosensitive structure.

Abstract: A photovoltaic device comprising: a plurality of photovoltaic cells, separated from each other; a support receiving the cells; and a light guide in contact with the cells and comprising a primary guide with a surface that is proximal to the cells, where the proximal surface is oriented towards the cells and the support. The photovoltaic device comprises, between the cells, areas located between the support and the primary guide which comprise a material with an index of refraction less than that of the proximal surface, where the material is in contact with the proximal surface.

Abstract: A method for fabricating a photosensitive device, comprising: a first step of preparing, on a substrate, at least a first photosensitive portion, active within a range of wavelengths, the first portion being surrounded by a second portion that is inactive. A material, covering the first portion, is selectively arranged into a hydrophilic layer by an electrochemical process. The second portion comprises a hydrophobic material on an upper surface opposite the substrate. The method further comprises the following steps: spraying on the upper surfaces of the first and second portions a liquid comprising a transparent material, and forming a converging lens containing the material, above the first portion.

Abstract: According to one aspect, the invention relates to an angular optical filtering element (Ei) optimized for angular filtering about a given operating angle of incidence (?i, 1) in a given spectral band. The angular filtering element (Ei) comprises a first nanostructured, band-pass, spectral filter (11i, 301) and a second nanostructured, band-pass, spectral filter (12i, 302). Each of the first and second spectral filters comprises, respectively, in said spectral band, a first and a second central filtering wavelength that respectively has a first and second angular dispersion curve defined depending on the angle of incidence (?inc) on the optical filtering element (Ei), the curves of angular dispersion being secant about the operating angle of incidence (?i, 1) of the optical filtering element. The invention applies to the production of a selective angular filtering device and to a multidirectional optical detection system.

Abstract: According to one aspect, the invention relates to an element for quantum photodetection of an incident radiation in a spectral band centered around a central wavelength ?0, having a front surface intended for receiving said radiation, and including: a stack of layers of semiconductor material forming a PN or PIN junction and including at least one layer made of an absorbent semiconductor material having a cut-off wavelength ?0>?0, the stack of layers of semiconductor material forming a resonant optical cavity; and a structure for coupling the incident radiation with the optical cavity such as to form a resonance at the central wavelength ?0 allowing the absorption of more than 80% in the layer of absorbent semiconductor material at said central wavelength, and an absence of resonance at the radiative wavelength ?rad, wherein the radiative wavelength ?rad is the wavelength for which, at operating temperature, the radiative recombination rate is the highest.

Abstract: According to one aspect, the present invention concerns a terahertz modulator (1) intended to be used in a given frequency band of use. The modulator comprises a semi-conductor polar crystal (330) presenting a Reststrahlen band overlapping said frequency band of use and presenting at least one interface with a dielectric medium, coupling means (330) allowing the resanant coupling of an interface phonon polariton (IPhP) supported by said interface and of an incident radiation (2) of pre-determined frequency lying in said frequency band of use and means of control (22) apt to modify the intensity of the coupling between said interface phonon polariton and said incident radiation (2) by modification of the dielectric function of the polar crystal in the Reststrahlen band of the polar crystal (10).

Abstract: According to one aspect, the invention relates to an element for quantum photodetection of an incident radiation in a spectral band centred around a central wavelength ?0, having a front surface intended for receiving said radiation, and including: a stack of layers of semiconductor material forming a PN or PIN junction and including at least one layer made of an absorbent semiconductor material having a cut-off wavelength ?0>?0, the stack of layers of semiconductor material forming a resonant optical cavity; and a structure for coupling the incident radiation with the optical cavity such as to form a resonance at the central wavelength ?0 allowing the absorption of more than 80% in the layer of absorbent semiconductor material at said central wavelength, and an absence of resonance at the radiative wavelength ?rad, wherein the radiative wavelength ?rad is the wavelength for which, at operating temperature, the radiative recombination rate is the highest.

Abstract: According to one aspect, the invention relates to a microbolometer array for thermal detection of light radiation in a given spectral band, comprising a supporting substrate and an array of microbolometers (300) of given dimensions, arranged in an array. Each of said microbolometers comprises a membrane (301) suspended above said supporting substrate, said membrane consisting of an element (305) for absorbing the incident radiation and a thermometric element (304) in thermal contact with the absorber, electrically insulated from said absorber element. The absorber element comprises at least one first metal/insulator/metal (MIM) structure comprising a multilayer of three superposed films of submicron-order thickness i.e. a first metallic film (311), a dielectric film (310), and a second metallic film (309), said MIM structure being able to have a resonant absorption of said incident radiation at at least one wavelength in said spectral band.

Abstract: A photovoltaic component that includes at least one first array of photovoltaic nano-cells is disclosed. Each photovoltaic component includes an optical nano-antenna exhibiting an electromagnetic resonance in a first resonant spectral band, at least one lateral dimension of the optical nano-antenna being subwavelength in size, and a spectral conversion layer allowing at least part of the solar spectrum to be converted to said first resonant spectral band.

Abstract: According to one aspect, the invention relates to an angular optical filtering element (?i) optimised for angular filtering about a given operating angle of incidence (?i, 1) in a given spectral band. The angular filtering element (?i) comprises a first nanostructured, band-pass, spectral filter (11i, 301) and a second nanostructured, band-pass, spectral filter (12i, 302). Each of the first and second spectral filters comprises, respectively, in said spectral band, a first and a second central filtering wavelength that respectively has a first and second angular dispersion curve defined depending on the angle of incidence (?inc) on the optical filtering element (?i), the curves of angular dispersion being secant about the operating angle of incidence (?i, 1) of the optical filtering element. The invention applies to the production of a selective angular filtering device and to a multidirectional optical detection system.

Abstract: A method for fabricating a photosensitive device, comprising: a first step of preparing, on a substrate, at least a first photosensitive portion, active within a range of wavelengths, the first portion being surrounded by a second portion that is inactive. A material, covering the first portion, is selectively arranged into a hydrophilic layer by an electrochemical process. The second portion comprises a hydrophobic material on an upper surface opposite the substrate. The method further comprises the following steps: spraying on the upper surfaces of the first and second portions a liquid comprising a transparent material, and forming a converging lens containing the material, above the first portion.

Abstract: A method for fabricating a photovoltaic device with light concentration, comprising: a first step of fabricating, on a substrate, a first array of photovoltaic cells from a stack of layers deposited on the substrate, the cells of the first array being connected to a first group of electrical connectors, a second step of forming a light concentration system above the cells of the first array. It further comprises: a third step, prior to at least the second step, of forming on the substrate a second array of photovoltaic cells from a stack of layers deposited on the substrate, the cells of the second array being interspersed with the cells of the first array and connected to a second group of electrical connectors, and being without a light concentration system.

Abstract: According to a first aspect of the invention, the invention relates to a terahertz detection cell for detecting radiations having frequencies within a given spectral detection band, said cell comprising: a polar semi-conductor crystal structured such that it forms at least one slab of crystal, said crystal (330) having a Reststrahlen band covering said spectral detection band, and comprising at least one interface with a dielectric means; coupling means obtained by the slab structure (330), each slab forming an optical antenna, enabling the resonant coupling of an interface phonon polariton (IPhP) supported by said interface and an incident radiation having a frequency within the spectral detection band; and at least one first and one second connection terminal (301, 302) that are in electrical contact respectively with a first and a second end of the interface, said ends opposing each other, and said connection terminals to be connected to an electrical reading circuit for measuring the variation of the impe

Abstract: A photovoltaic component that includes at least one first array of photovoltaic nano-cells is disclosed. Each photovoltaic component includes an optical nano-antenna exhibiting an electromagnetic resonance in a first resonant spectral band, at least one lateral dimension of the optical nano-antenna being subwavelength in size, and a spectral conversion layer allowing at least part of the solar spectrum to be converted to said first resonant spectral band.