Abstract: According to one aspect, the invention relates a spectral band-pass filter, which is optimized for the transmission of an incident wave at at least a first given central wavelength ?0, and which includes: a metal grating having a thickness (t) greater than approximately ?0/50 and including at least a first set of substantially identical, parallel slots having a width (W) less than around ?0/10, and being spaced apart periodically or quasi-periodically according to a first period that is less than said first central wavelength, a layer of dielectric material having a thickness (h) and a given refractive index (ng), which is coupled to the metal grating to form a waveguide for the waves diffracted by the grating, said first period of the grating being designed such that only orders 0 and ±1 of a wave having normal incidence and a wavelength ?0 are diffracted in the layer of dielectric material, the assembly of the dielectric layer and grating being suspended, during use, in a fluid having a refractive index of

Abstract: According to one aspect, the invention relates to a microbolometer array for thermal detection of light radiation in a given spectral band, comprising a supporting substrate and an array of microbolometers (300) of given dimensions, arranged in an array. Each of said microbolometers comprises a membrane (301) suspended above said supporting substrate, said membrane consisting of an element (305) for absorbing the incident radiation and a thermometric element (304) in thermal contact with the absorber, electrically insulated from said absorber element. The absorber element comprises at least one first metal/insulator/metal (MIM) structure comprising a multilayer of three superposed films of submicron-order thickness i.e. a first metallic film (311), a dielectric film (310), and a second metallic film (309), said MIM structure being able to have a resonant absorption of said incident radiation at at least one wavelength in said spectral band.

Abstract: According to one aspect, the present invention concerns a terahertz modulator (1) intended to be used in a given frequency band of use. The modulator comprises a semi-conductor polar crystal (330) presenting a Reststrahlen band overlapping said frequency band of use and presenting at least one interface with a dielectric medium, coupling means (330) allowing the resanant coupling of an interface phonon polariton (IPhP) supported by said interface and of an incident radiation (2) of pre-determined frequency lying in said frequency band of use and means of control (22) apt to modify the intensity of the coupling between said interface phonon polariton and said incident radiation (2) by modification of the dielectric function of the polar crystal in the Reststrahlen band of the polar crystal (10).

Abstract: According to a first aspect of the invention, the invention relates to a terahertz detection cell for detecting radiations having frequencies within a given spectral detection band, said cell comprising: a polar semi-conductor crystal structured such that it forms at least one slab of crystal, said crystal (330) having a Reststrahlen band covering said spectral detection band, and comprising at least one interface with a dielectric means; coupling means obtained by the slab structure (330), each slab forming an optical antenna, enabling the resonant coupling of an interface phonon polariton (IPhP) supported by said interface and an incident radiation having a frequency within the spectral detection band; and at least one first and one second connection terminal (301, 302) that are in electrical contact respectively with a first and a second end of the interface, said ends opposing each other, and said connection terminals to be connected to an electrical reading circuit for measuring the variation of the impe

Abstract: According to one aspect, the invention relates a spectral band-pass filter, which is optimized for the transmission of an incident wave at at least a first given central wavelength ?0, and which includes: a metal grating having a thickness (t) greater than approximately ?0/50 and including at least a first set of substantially identical, parallel slots having a width (W) less than around ?0/10, and being spaced apart periodically or quasi-periodically according to a first period that is less than said first central el wavelength, a layer of dielectric material having a thickness (h) and a given refractive index (ng), which is coupled to the metal grating to form a waveguide for the waves diffracted by the grating, said first period of the grating being designed such that only orders 0 and ±1 of a wave having normal incidence and a wavelength ?0 are diffracted in the layer of dielectric material, the assembly of the dielectric layer and grating being suspended, during use, in a fluid having a refractive index

Abstract: The invention concerns a heterojunction bipolar transistor comprising a support, and epitaxially grown from said support, at least: one collecting, respectively emitting, layer; at least one base layer; and at least one emitting, respectively collecting, layer. The collecting, respectively emitting, layer comprises: at least one first undercoat contacted with said base layer, substantially of similar composition as said emitting, respectively collecting, layer; and at least one second undercoat on the side opposite said base layer relative to said first undercoat.

Abstract: According to a first aspect, the present invention relates to a spectral filter suitable for filtering an incident wave at at least a first given central wavelength ?0 comprising a substrate with a through orifice and a membrane of dielectric material. The membrane is suspended above the orifice and is structured to form a set of rods organized in the form of a two-dimensional pattern (33) repeated in two directions (D1, D2), the repetition of the pattern in at least one direction being periodic or quasi-periodic, with a first period (T1) less than the central wavelength ?0.

Abstract: A photovoltaic component including a set of layers suitable for producing a photovoltaic device is disclosed. The component has at least one first layer made of a conductive material forming a back electrical contact, a second layer made of a material that is absorbent in the solar spectrum, and a third layer made of a transparent conductive material forming a front electrical contact, and an electrically insulating layer arranged between said back electrical contact and said front electrical contact. The third layer is discontinuous in order to allow said layers of said set of layers to be stacked in one or more zones to form, in each of these zones, an active photovoltaic zone, and a fourth layer made of a conductive material, making electrical contact with said third layer made of a transparent conductive material, to form a peripheral electrical contact for each of said photovoltaic microcells.

Abstract: According to one aspect, the invention relates to an asymmetric MIM type absorbent nanometric structure (1, 1?) intended to receive a wide-band incident light wave the absorption of which is to be optimised within a given spectral band, comprising an absorbent dielectric layer (10) in said spectral band, of subwavelength thickness, arranged between a metal array (11) of subwavelength period and a metal reflector (12).

Abstract: The invention concerns a heterojunction bipolar transistor comprising a support, and epitaxially grown from said support, at least: one collecting, respectively emitting, layer; at least one base layer; and at least one emitting, respectively collecting, layer. The collecting, respectively emitting, layer comprises: at least one first undercoat contacted with said base layer, substantially of similar composition as said emitting, respectively collecting, layer; and at least one second undercoat on the side opposite said base layer relative to said first undercoat.

Abstract: This invention relates to an MSM type photo-detection device designed to detect incident light and comprising reflecting means (2) superposed on a support (1), to form a first mirror for a Fabry-Pérot type resonant cavity, a layer of material (3) that does not absorb light, an active layer (4) made of a semiconducting material absorbing incident light and a network (5) of polarization electrodes collecting the detected signal. The electrodes network is arranged on the active layer and is composed of parallel conducting strips at a uniform spacing at a period less than the wavelength of incident light, the electrodes network forming a second mirror for the resonant cavity, the optical characteristics of this second mirror being determined by the geometric dimensions of the said conducting strips. The distance separating the first mirror from the second mirror is determined to obtain a Fabry-Pérot type resonance for incident light between these two mirrors.

Abstract: This invention relates to an MSM type photo-detection device designed to detect incident light and comprising reflecting means (2) superposed on a support (1), to form a first mirror for a Fabry-Pérot type resonant cavity, a layer of material (3) that does not absorb light, an active layer (4) made of a semiconducting material absorbing incident light and a network (5) of polarization electrodes collecting the detected signal. The electrodes network is arranged on the active layer and is composed of parallel conducting strips at a uniform spacing at a period less than the wavelength of incident light, the electrodes network forming a second mirror for the resonant cavity, the optical characteristics of this second mirror being determined by the geometric dimensions of the said conducting strips. The distance separating the first mirror from the second mirror is determined to obtain a Fabry-Pérot type resonance for incident light between these two mirrors.

Abstract: Device for photodetection with a vertical metal semiconductor microresonator and procedure for the manufacture of this device. According to the invention, in order to detect an incident light, at least one element is formed over an insulating layer (2) that does not absorb this light, including a semiconductor material (6) and at least two electrodes (4) holding the element, with the element and electrode unit being suitable for absorbing this light and designed to incease the light intensity with respect to the incident light, in particular by making a surface plasmon mode resonate between the unit interfaces with the layer and the propagation medium for the incident light, with the resonance of this mode taking place in teh interface between the element and atleast one of the electrodes, with this mode being excited by the component of the magnetic field of the light, parallel to the electrodes. Application for optical telecommunications.

Abstract: Device for photodetection with a vertical metal semiconductor microresonator and procedure for the manufacture of this device.