Abstract: In one aspect, an angle sensor includes a first linear sensor and a second linear sensor. A first magnetic-field direction of a target magnet measured by the first linear sensor is substantially equal to a second magnetic-field direction of the target magnet measured by the second linear sensor. The first linear sensor, the second linear sensor and the target magnet are on an axis. The angle sensor determines an angle of a magnetic field.

Abstract: In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.

Abstract: In one aspect, a bridge includes a first magnetoresistance element having a first reference angle, a second magnetoresistance element in series with the first magnetoresistance element and having a second reference angle, a third magnetoresistance element in parallel with the first magnetoresistance element and having the first reference angle and a fourth magnetoresistance element in series with the third magnetoresistance element and having the second reference angle. An output of the bridge has a linear response over a range of horizontal magnetic field intensity values not centered about a zero value and a reference angle indicates an angle the magnetoresistance element is most sensitive to changes in a magnetic field.

Abstract: A magnetic field sensor responsive to a movement of a target object can include a plurality of magnetoresistance elements arranged in a line and having a span according to y(1?1/x), where y is equal a full spatial period of the target object and where x is equal to a total quantity of magnetoresistance elements in the plurality of magnetoresistance elements. The plurality of magnetic field sensing elements is operable to generate a signal that is substantially not responsive to the movement of the target object but is responsive to stray external magnetic fields.

Abstract: In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.

Abstract: In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.

Abstract: In one aspect, a bridge includes a first magnetoresistance element having a first reference angle, a second magnetoresistance element in series with the first magnetoresistance element and having a second reference angle, a third magnetoresistance element in parallel with the first magnetoresistance element and having the first reference angle and a fourth magnetoresistance element in series with the third magnetoresistance element and having the second reference angle. An output of the bridge has a linear response over a range of horizontal magnetic field values not centered about a zero value and a reference angle indicates an angle the magnetoresistance element is most sensitive to changes in a magnetic field.

Abstract: In one aspect, an angle sensor includes a first linear sensor and a second linear sensor. A first magnetic-field direction of a target magnet measured by the first linear sensor is substantially equal to a second magnetic-field direction of the target magnet measured by the second linear sensor. The first linear sensor, the second linear sensor and the target magnet are on an axis. The angle sensor determines an angle of a magnetic field.

Abstract: In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.

Abstract: A magnetic field sensor responsive to a movement of a target object can include a plurality of magnetoresistance elements arranged in a line and having a span according to y(1?1/x), where y is equal a full spatial period of the target object and where x is equal to a total quantity of magnetoresistance elements in the plurality of magnetoresistance elements. The plurality of magnetic field sensing elements is operable to generate a signal that is substantially not responsive to the movement of the target object but is responsive to stray external magnetic fields.

Abstract: The present invention relates to an interface circuit for a capacitive accelerometer sensor for measuring an acceleration value sensed by the sensor. The interface circuit comprises a plurality of electrical switches and three programmable capacitors. Two of the programmable capacitors are arranged to implement gain trimming of the interface circuit, while one of the programmable capacitors is arranged to implement acceleration range selection.

Abstract: A capacitive accelerometer for measuring an acceleration value is provided, including a first and a second electrode; a third mobile electrode arranged therebetween, and forming with the first electrode a first capacitor, and with the second electrode a second capacitor, the third electrode being displaced when the accelerometer is subject to acceleration and generates a capacitance difference value transformable to electrical charges; a first and a second voltage source configured to selectively apply first and second voltages to the first and the second electrodes, respectively, and a third voltage to the third electrode, and to generate electrostatic forces acting on the third electrode, the first, second and/or third voltages applied during electrical charge transfers for collecting the electrical charges to measure the acceleration; and an electrostatic force compensator to compensate for missing electrostatic forces due to a modified charge transfer rate, a compensation amount dependent on the modified

Abstract: The present invention relates to an interface circuit for a capacitive accelerometer sensor for measuring an acceleration value sensed by the sensor. The interface circuit comprises a plurality of electrical switches and three programmable capacitors. Two of the programmable capacitors are arranged to implement gain trimming of the interface circuit, while one of the programmable capacitors is arranged to implement acceleration range selection.

Abstract: The present invention concerns a capacitive accelerometer for measuring an acceleration value. The accelerometer comprises: a first electrode; a second electrode; a third, mobile electrode arranged between the first and second electrodes, and forming with the first electrode a first capacitor with a first capacitance value, and with the second electrode a second capacitor with a second capacitance value, the third electrode being arranged to be displaced when the capacitive accelerometer is subject to acceleration thereby arranged to generate a capacitance difference value between the first and second capacitances transformable to electrical charges; a first voltage source and a second voltage source for selectively applying a first voltage value to the first electrode, a second voltage value to the second electrode and a third voltage value to the third electrode, and arranged to generate electrostatic forces acting on the third electrode.

Abstract: The present invention concerns a method of operating a first-in first-out memory (9) arranged to store measurement data samples measured by a plurality of data measurement sensors (1, 3, 5), which can operate at various sampling rates. The oldest measurement data sample in the memory (9) is arranged to be read first before the newer measurement data samples. The method comprises: receiving measurement data samples from at least two data measurement sensors (1, 3, 5); and saving the received measurement data samples in the memory (9). Each of the measurement data samples saved in the memory is associated with a tag which is also saved in the memory (9) and which identifies the data measurement sensor (1, 3, 5) which measured the respective measurement data sample.

Abstract: The electronic measurement circuit comprises a measurement sensor with two differential mounted capacitors each comprising a fixed electrode, and a common electrode arranged to move relative to the fixed capacitor electrode to alter the capacitive value when the physical parameter is measured.

Abstract: The electronic measurement circuit comprises a measurement sensor with two differential mounted capacitors each comprising a fixed electrode, and a common electrode arranged to move relative to the fixed capacitor electrode to alter the capacitive value when the physical parameter is measured.

Abstract: The present invention concerns a method of operating a first-in first-out memory (9) arranged to store measurement data samples measured by a plurality of data measurement sensors (1, 3, 5), which can operate at various sampling rates. The oldest measurement data sample in the memory (9) is arranged to be read first before the newer measurement data samples. The method comprises: receiving measurement data samples from at least two data measurement sensors (1, 3, 5); and saving the received measurement data samples in the memory (9). Each of the measurement data samples saved in the memory is associated with a tag which is also saved in the memory (9) and which identifies the data measurement sensor (1, 3, 5) which measured the respective measurement data sample.

Abstract: Techniques for sensing a semiconductor memory device are disclosed. In one embodiment, the techniques may be realized as a semiconductor memory device comprising a plurality of memory cells arranged in an array of rows and columns and data sense amplifier circuitry coupled to at least one of the plurality of memory cells. The data sense amplifier circuitry may comprise first amplifier circuitry and resistive circuitry, wherein the first amplifier circuitry and the resistive circuitry may form a feedback loop.

Abstract: Techniques for sensing a semiconductor memory device are disclosed. In one embodiment, the techniques may be realized as a semiconductor memory device comprising a plurality of memory cells arranged in an array of rows and columns and data sense amplifier circuitry coupled to at least one of the plurality of memory cells. The data sense amplifier circuitry may comprise first amplifier circuitry and resistive circuitry, wherein the first amplifier circuitry and the resistive circuitry may form a feedback loop.