Patents by Inventor Jeff McKee
Jeff McKee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090169153Abstract: A device and method for providing an optical guide of a pixel to guide incoming light to/from a photo-conversion device of the pixel to improve the optical crosstalk immunity. The optical guide includes an optically reflecting barrier formed as a trench filled with a material which produces reflection. The trench fill material may have an index of refraction that is less than the index of refraction of the material used for the trench surrounding layers to provide a light reflective structure or the trench fill material may provide a reflection surface.Type: ApplicationFiled: February 26, 2009Publication date: July 2, 2009Inventors: Ji Soo Lee, Jeff A. Mckee, Chandra Mouli
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Patent number: 7531379Abstract: A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.Type: GrantFiled: September 12, 2003Date of Patent: May 12, 2009Assignee: Micron Technology, Inc.Inventors: Howard Rhodes, Jeff Mckee
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Patent number: 7525134Abstract: A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.Type: GrantFiled: July 19, 2006Date of Patent: April 28, 2009Assignee: Micron Technology, Inc.Inventors: Howard Rhodes, Jeff McKee
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Patent number: 7511257Abstract: A device and method for providing an optical guide of a pixel to guide incoming light to/from a photo-conversion device of the pixel to improve the optical crosstalk immunity. The optical guide includes an optically reflecting barrier formed as a trench filled with a material which produces reflection. The trench fill material may have an index of refraction that is less than the index of refraction of the material used for the trench surrounding layers to provide a light reflective structure or the trench fill material may provide a reflection surface.Type: GrantFiled: August 24, 2005Date of Patent: March 31, 2009Assignee: Aptina Imaging CorporationInventors: Ji Soo Lee, Jeff A. Mckee, Chandra Mouli
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Publication number: 20090004794Abstract: The present invention provides a flash memory integrated circuit and a method for fabricating the same. The method includes etching a gate stack that includes an initial oxide layer directly in contact with a silicon layer, defining an oxide-silicon interface therebetween. By exposing the etched gate stack to elevated temperatures and a dilute steam ambient, additional oxide material is formed substantially uniformly along the oxide-silicon interface. Polysilicon grain boundaries at the interface are thereby passivated after etching. In the preferred embodiment, the interface is formed between a tunnel oxide and a floating gate, and passivating the grain boundaries reduces erase variability due to enhanced charge transfer along grain boundaries. At the same time, oxide in an upper storage dielectric layer (oxide-nitride-oxide or ONO) is enhanced in the dilute steam oxidation.Type: ApplicationFiled: September 4, 2008Publication date: January 1, 2009Applicant: Micron Technology, Inc.Inventors: Ronald A. Weimer, Don C. Powell, John T. Moore, Jeff A. McKee
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Patent number: 7432546Abstract: The present invention provides a flash memory integrated circuit and a method for fabricating the same. The method includes etching a gate stack that includes an initial oxide layer directly in contact with a silicon layer, defining an oxide-silicon interface therebetween. By exposing the etched gate stack to elevated temperatures and a dilute steam ambient, additional oxide material is formed substantially uniformly along the oxide-silicon interface. Polysilicon grain boundaries at the interface are thereby passivated after etching. In the preferred embodiment, the interface is formed between a tunnel oxide and a floating gate, and passivating the grain boundaries reduces erase variability due to enhanced charge transfer along grain boundaries. At the same time, oxide in an upper storage dielectric layer (oxide-nitride-oxide or ONO) is enhanced in the dilute steam oxidation.Type: GrantFiled: August 17, 2005Date of Patent: October 7, 2008Assignee: Micron Technology, Inc.Inventors: Ronald A. Weimer, Don C. Powell, John T. Moore, Jeff A. McKee
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Publication number: 20080011942Abstract: A photodiode has a photodiode gate structure on the surface of the substrate. The photodiode may be located in a pixel sensor cell comprising a substrate having a first surface level. The photodiode has a first doped region of a first conductivity type and a second doped region of a second conductivity type located beneath the first surface level of the substrate. A photodiode gate is formed of a first dielectric substance layer formed over the first surface of the substrate, thereby forming a second surface, and a second polysilicon layer formed over the second surface of the first layer. A transistor is located adjacent to the photodiode. The photodiode gate improves charge transfer from the photodiode to the transfer gate and floating diffusion region. The improved charge transfer minimizes image lag and leakage and reduces energy barriers.Type: ApplicationFiled: June 29, 2007Publication date: January 17, 2008Inventors: Sungkwon Hong, Jeff McKee
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Publication number: 20070272830Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.Type: ApplicationFiled: August 3, 2007Publication date: November 29, 2007Inventors: Peter Altice, Jeffrey Bruce, Jeff McKee, Joey Shah, Richard Mauritzson
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Patent number: 7253392Abstract: A photodiode has a photodiode gate structure on the surface of the substrate. The photodiode may be located in a pixel sensor cell comprising a substrate having a first surface level. The photodiode has a first doped region of a first conductivity type and a second doped region of a second conductivity type located beneath the first surface level of the substrate. A photodiode gate is formed of a first dielectric substance layer formed over the first surface of the substrate, thereby forming a second surface, and a second polysilicon layer formed over the second surface of the first layer. A transistor is located adjacent to the photodiode. The photodiode gate improves charge transfer from the photodiode to the transfer gate and floating diffusion region. The improved charge transfer minimizes image lag and leakage and reduces energy barriers.Type: GrantFiled: September 8, 2003Date of Patent: August 7, 2007Assignee: Micron Technology, Inc.Inventors: Sungkwon (Chris) Hong, Jeff A. McKee
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Publication number: 20070102624Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.Type: ApplicationFiled: December 22, 2006Publication date: May 10, 2007Inventors: Peter Altice, Jeffrey Bruce, Jeff McKee, Joey Shah, Richard Mauritzson
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Patent number: 7196304Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.Type: GrantFiled: January 29, 2004Date of Patent: March 27, 2007Assignee: Micron Technology, Inc.Inventors: Peter P. Altice, Jr., Jeffrey Bruce, Jeff A. Mckee, Joey Shah, Richard A. Mauritzson
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Publication number: 20070045680Abstract: Imager devices having an array of photosensors, each photosensor having at least two doped regions. The two doped regions are each independently tailored to a particular wavelength.Type: ApplicationFiled: August 30, 2005Publication date: March 1, 2007Inventors: John Ladd, Inna Patrick, Gennadiy Agranov, Jeff McKee
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Publication number: 20070045511Abstract: A device and method for providing an optical guide of a pixel to guide incoming light to/from a photo-conversion device of the pixel to improve the optical crosstalk immunity. The optical guide includes an optically reflecting barrier formed as a trench filled with a material which produces reflection. The trench fill material may have an index of refraction that is less than the index of refraction of the material used for the trench surrounding layers to provide a light reflective structure or the trench fill material may provide a reflection surface.Type: ApplicationFiled: August 24, 2005Publication date: March 1, 2007Inventors: Ji Lee, Jeff Mckee, Chandra Mouli
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Patent number: 7176434Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.Type: GrantFiled: November 3, 2005Date of Patent: February 13, 2007Assignee: Micron Technology, Inc.Inventors: Peter P. Altice, Jr., Jeffrey Bruce, Jeff A. Mckee, Joey Shah, Richard A. Mauritzson
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Publication number: 20060273352Abstract: A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.Type: ApplicationFiled: July 19, 2006Publication date: December 7, 2006Inventors: Howard Rhodes, Jeff McKee
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Patent number: 7102180Abstract: A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.Type: GrantFiled: June 24, 2005Date of Patent: September 5, 2006Assignee: Micron Technology, Inc.Inventors: Howard Rhodes, Jeff McKee
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Publication number: 20060065814Abstract: An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.Type: ApplicationFiled: November 3, 2005Publication date: March 30, 2006Inventors: Peter Altice, Jeffrey Bruce, Jeff Mckee, Joey Shah, Richard Mauritzson
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Publication number: 20060011969Abstract: The present invention provides a flash memory integrated circuit and a method for fabricating the same. The method includes etching a gate stack that includes an initial oxide layer directly in contact with a silicon layer, defining an oxide-silicon interface therebetween. By exposing the etched gate stack to elevated temperatures and a dilute steam ambient, additional oxide material is formed substantially uniformly along the oxide-silicon interface. Polysilicon grain boundaries at the interface are thereby passivated after etching. In the preferred embodiment, the interface is formed between a tunnel oxide and a floating gate, and passivating the grain boundaries reduces erase variability due to enhanced charge transfer along grain boundaries. At the same time, oxide in an upper storage dielectric layer (oxide-nitride-oxide or ONO) is enhanced in the dilute steam oxidation.Type: ApplicationFiled: August 17, 2005Publication date: January 19, 2006Inventors: Ronald Weimer, Don Powell, John Moore, Jeff McKee
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Publication number: 20050258457Abstract: A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.Type: ApplicationFiled: June 24, 2005Publication date: November 24, 2005Inventors: Howard Rhodes, Jeff McKee
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Patent number: 6960796Abstract: A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.Type: GrantFiled: November 26, 2002Date of Patent: November 1, 2005Assignee: Micron Technology, Inc.Inventors: Howard Rhodes, Jeff McKee