Abstract: A method for providing conductive paths into a hermetically sealed cavity is described. The sealed cavity is formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process and the method includes forming recesses on a glass substrate everywhere that a conductive path is to pass into the cavity, and forming conductive leads in and around the recesses. A glass layer is deposited over the substrate, into the recesses, and over the conductive leads and then planarized to expose portions of the conductive leads. A sealing surface is formed on at least a portion of the glass layer. Silicon is then bonded to the sealing surface of the planarized glass layer, the wafer being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.

Abstract: A method for providing conductive paths into a hermetically sealed cavity is described. The sealed cavity is formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process and the method includes forming recesses on a glass substrate everywhere that a conductive path is to pass into the cavity, and forming conductive leads in and around the recesses. A glass layer is deposited over the substrate, into the recesses, and over the conductive leads and then planarized to expose portions of the conductive leads. A sealing surface is formed on at least a portion of the glass layer. Silicon is then bonded to the sealing surface of the planarized glass layer, the wafer being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.

Abstract: An integrated vacuum package having an added volume on a perimeter within the perimeter of a bonding seal between two wafers. The added volume of space may be an etching of material from the inside surface of the top wafer. This wafer may have vent holes that may be sealed to maintain a vacuum within the volume between the two wafers after the pump out of gas and air. The inside surface of the top wafer may have an anti-reflective pattern. Also, an anti-reflective pattern may be on the outside surface of the top wafer. The seal between the two wafers may be ring-like and have a spacer material. Also, it may have a malleable material such as solder to compensate for any flatness variation between the two facing surfaces of the wafers.

Abstract: A wafer-pair having at least one recess in one wafer and the recess formed into a chamber with the attaching of the other wafer which has a port plugged with a deposited layer on its external surface. The deposition of the layer may be performed in a very low pressure environment, thus assuring the same kind of environment in the sealed chamber. The chamber may enclose at least one device such as a thermoelectric sensor, bolometer, emitter or other kind of device. The wafer-pair typically will have numerous chambers, and may be divided into chips.

Abstract: Producing the microstructures on separate substrates, which are bonded. One of these structures may be temperature sensitive CMOS electronics. There may be a high-temperature thermal sensor on one wafer and low-temperature CMOS electronics. In the case where the bonding material is polyimide, the polyimide on both surfaces to be bonded is soft baked. The wafers are placed in a wafer bonder and, using precision alignment, brought into contact. The application of pressure and heat forms a bond between the two coatings of polyimide. A wafer may need to be removed from a combined structure. One of the bonded structures may be placed on a sacrificial layer that can be etched away to facilitate removal of a wafer without grinding. After wafer removal, a contact from the backside of one of the structures now on polyimide to the other on the wafer may be made. Sacrificial material, for example, polyimide, may be removed from between the structures that are connected via a contact.

Abstract: A micromechanical switch and a method for operating the micromechanical switch between an open position and a closed position by moving a magnet between two positions. The magnet produces a magnetic flux that travels through a magnetically conductive layer. The magnetic flux within the magnetically conductive layer forcibly draws a contact element into contact with an electrically conductive layer and electrically shorts the open electrical contacts.

Abstract: A micromechanical switch and a method for operating the micromechanical switch between an open position and a closed position by moving a magnet between two positions. The magnet produces a magnetic flux that travels through one of two different conductive layers. The magnetic flux within the conductive layer forcibly draws a contact element into contact with the conductive layer and electrically shorts the conductive layer. Depending upon which conductive layer is shorted, the micromechanical switch is set in either the open position or the closed position.

Abstract: A method for fabricating a wafer-pair having at least one recess in one wafer and the recess formed into a chamber with the attaching of the other wafer which has a port plugged with a deposited layer on its external surface. The deposition of the layer may be performed in a very low pressure environment, thus assuring the same kind of environment in the sealed chamber. The chamber may enclose at least one device such as a thermoelectric sensor, bolometer, emitter or other kind of device. The wafer-pair typically will have numerous chambers, with devices, respectively, and may be divided into a multiplicity of chips.

Abstract: An efficient method brings together two wafers of dies that contain an infrared transparent window or top cap with either an infrared detector or emitter array to produce a low cost infrared package. A low thermal conductivity gas or a vacuum may be used between the wafers for enhanced thermal isolation. Joining of the wafers is preferably by solder, although ultrasonic bonding can be used.

Abstract: A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates the heater and detectors which are encapsulated in the diaphragm. The cavity is fabricated by front side etching of the silicon wafer. Narrow slots are made through the silicon nitride diaphragm to expose a thin film (400 angstrom) rectangle of aluminum. A first etch removes the aluminum leaving a 400 angstrom very shallow cavity under the diaphragm. Anisotropic etch is then introduced into the shallow cavity to etch the silicon pit.

Abstract: A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates the heater and detectors which are encapsulated in the diaphragm. The cavity is fabricated by front side etching of the silicon wafer. Narrow slots are made through the silicon nitride diaphragm to expose a thin film (400 angstrom) rectangle of aluminum. A first etch removes the aluminum leaving a 400 angstrom very shallow cavity under the diaphragm. Anisotropic etch is then introduced into the shallow cavity to etch the silicon pit.

Abstract: An improved connector pad stack structure for use in microstructure devices having a silicon nitride surface in which the sensor metal such as platinum or Ni-Fe is eliminated from the pad bonding site and only adhesion promoting metals are used on the Si.sub.3 N.sub.4 to provide a stronger, more durable and reliable pad stack.

Abstract: A microbridge air flow sensor having a silicon nitride diaphragm formed on the surface of a single crystal silicon wafer. A rectangular 500 angstrom thick sacrificial layer was deposited on the silicon surface before the silicon nitride to define the exact position of the diaphragm. A series of etches from the backside of the wafer is performed to fabricate the device. A first silicon anisotropic etch from the backside is stopped at the sacrificial layer. A sacrificial layer selective etch is applied from the backside first pit to the sacrificial layer to remove all of the rectangular sacrificial layer. Anisotropic etch is again applied into the space created by the removed sacrificial layer whereby the second etch attacks the silicon exposed by the removal of the sacrificial layer and etches downward forming a second anisotropic etch pit. Thus all the etches are from the backside of the silicon wafer.