Abstract: Light emitter devices and methods with reduced dimensions and improved light output are provided. In one embodiment, a light emitter device includes a submount having an area of approximately 6 square millimeters (mm2) or less. The device can further include a light emitting chip on the submount and a lens disposed over the light emitting chip and positioned on the submount. The device can be operable for emitting light at approximately 100 lumens or higher.

Abstract: Multiple configuration light emitting diode (LED) devices and methods are disclosed wherein LEDs within the device can be selectively configured for use in higher voltage, or variable voltage, applications. Variable arrangements of LEDs can be configured. Arrangements can include one or more LEDs connected in series, parallel, and/or a combination thereof. A surface over which one or more LEDs may be mounted can comprise one or more electrically and/or thermally isolated portions.

Abstract: Light emitter devices with improved light extraction and related methods are disclosed. In one embodiment, the light emitter device can include a submount, at least one light emitting chip disposed over the submount, and a lens disposed over the light emitting chip. The lens can include a lens base that can have substantially the same geometry as a geometry of the submount.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Abstract: High density multi-chip LED devices are described. Embodiments of the present invention provide high-density, multi-chip LED devices with relatively high efficiency and light output in a compact size. An LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The LED chips may be arranged in two groups, wherein the LED chips within each group are connected in parallel and the groups are connected in series. In some embodiments, the LED device includes a submount, which may be made of ceramic. The submount may include a connection bus and semicircular areas to which chips are bonded. Wire bonds can be connected to the LED chips so that all the wire bonds are disposed on the outside of a group of LED chips to minimize light absorption.

Abstract: High density multi-chip LED devices are described. Embodiments of the present invention provide high-density, multi-chip LED devices with relatively high efficiency and light output in a compact size. An LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The LED chips may be arranged in two groups, wherein the LED chips within each group are connected in parallel and the groups are connected in series. In some embodiments, the LED device includes a submount, which may be made of ceramic. The submount may include a connection bus and semicircular areas to which chips are bonded. Wire bonds can be connected to the LED chips so that all the wire bonds are disposed on the outside of a group of LED chips to minimize light absorption.

Abstract: High density multi-chip LED devices are described. Embodiments of the present invention provide high-density, multi-chip LED devices with relatively high efficiency and light output in a compact size. An LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The LED chips may be arranged in two groups, wherein the LED chips within each group are connected in parallel and the groups are connected in series. In some embodiments, the LED device includes a submount, which may be made of ceramic. The submount may include a connection bus and semicircular areas to which chips are bonded. Wire bonds can be connected to the LED chips so that all the wire bonds are disposed on the outside of a group of LED chips to minimize light absorption.

Abstract: High voltage array light emitting devices, fixtures and methods are disclosed. In one embodiment a light emitting device can include a submount, a light emission area disposed over the submount and a retention material adapted to be dispensed about the light emission area. The light emitting device can be operable at high voltages which are greater than approximately 40 volts (V). In one aspect, the retention material can be least partially disposed within the light emission area such that the retention material physically separates a first section of the light emission area from a second section of the light emission area.

Abstract: Multi-chip LED devices are described. Embodiments of the present invention provide multi-chip LED devices with relatively high efficiency and good color rendering. The LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The optical element may be molded from silicone. The LED chips may be connected in parallel. In some embodiments, the LED device includes a submount, which may be made of a ceramic material such as alumina or aluminum nitride. Wire bonds can be connected to the LED chips so that all the wire bonds tend the outside of a group of LED chips. Various sizes and types of LED chips may be used, including vertical LED chips and sideview LED chips.

Abstract: Light emitting devices and methods such as light emitting diodes (LEDs) are disclosed for use in higher voltage applications. Variable arrangements of LEDs are disclosed herein. Arrangements can include one or more LED chips connected in series, parallel, and/or a combination thereof. LED chips can be disposed in a package body having at least one thermal element and one or more electrical components.

Abstract: Light emitter devices with improved light extraction and related methods are disclosed. In one embodiment, the light emitter device can include a submount, at least one light emitting chip disposed over the submount, and a lens disposed over the light emitting chip. The lens can include a lens base that can have substantially the same geometry as a geometry of the submount.

Abstract: Light emitter devices and methods with reduced dimensions and improved light output are provided. In one embodiment, a light emitter device includes a submount having an area of approximately 6 square millimeters (mm2) or less. The device can further include a light emitting chip on the submount and a lens disposed over the light emitting chip and positioned on the submount. The device can be operable for emitting light at approximately 100 lumens or higher.

Abstract: Light emitting devices and methods such as light emitting diodes (LEDs) are disclosed for use in higher voltage applications. Variable arrangements of LEDs are disclosed herein. Arrangements can include one or more LED chips connected in series, parallel, and/or a combination thereof. LED chips can be disposed in a package body having at least one thermal element and one or more electrical components.

Abstract: Multiple configuration light emitting diode (LED) devices and methods are disclosed wherein LEDs within the device can be selectively configured for use in higher voltage, or variable voltage, applications. Variable arrangements of LEDs can be configured. Arrangements can include one or more LEDs connected in series, parallel, and/or a combination thereof. A surface over which one or more LEDs may be mounted can comprise one or more electrically and/or thermally isolated portions.

Abstract: High density multi-chip LED devices are described. Embodiments of the present invention provide high-density, multi-chip LED devices with relatively high efficiency and light output in a compact size. An LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The LED chips may be arranged in two groups, wherein the LED chips within each group are connected in parallel and the groups are connected in series. In some embodiments, the LED device includes a submount, which may be made of ceramic. The submount may include a connection bus and semicircular areas to which chips are bonded. Wire bonds can be connected to the LED chips so that all the wire bonds are disposed on the outside of a group of LED chips to minimize light absorption.

Abstract: Multi-chip LED devices are described. Embodiments of the present invention provide multi-chip LED devices with relatively high efficiency and good color rendering. The LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The optical element may be molded from silicone. The LED chips may be connected in parallel. In some embodiments, the LED device includes a submount, which may be made of a ceramic material such as alumina or aluminum nitride. Wire bonds can be connected to the LED chips so that all the wire bonds tend the outside of a group of LED chips. Various sizes and types of LED chips may be used, including vertical LED chips and sideview LED chips.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.