Abstract: A semiconductor laser that has a reflective surface. The reflective surface redirects the light of an edge emitting laser diode to emit from the top or bottom surface of the diode. The laser may include a gain layer and a feedback layer located within a semiconductive die. The gain and feedback layers generate a laser beam that travels parallel to the surface of the die. The reflective surface reflects the laser beam 90 degrees so that the beam emits the die from the top or bottom surface. The reflective surface can be formed by etching a vicinally oriented III-V semiconductive die so that the reflective surface extends along a (111)A crystalline plane of the die.

Abstract: Diode lasers comprise a substrate and a number of material layers disposed thereon that include a P-type material layer, and an N-type material layer. A gain layer and diffraction grating feedback layer can be also be included in the material layers. The material layers are formed by epitaxial deposition, during which process a wall surface common to the material layers is also formed. This wall surface forms an internally reflective wall surface within the material layers that is oriented to reflect a laser beam internally within the diode laser construction towards a top or bottom surface of the diode laser for emission therefrom. In an preferred embodiment, the internally reflective wall surface is oriented at a 45 degree angle, and the laser beam is reflected by the wall surface to emit the laser beam from the diode laser at a 90 degree angle relative to the top or bottom surface.

Abstract: A laser diode array assembly. The assembly includes a plurality of vertical emitting laser diodes. Each laser diode has a vertical emitting surface and an exposed substrate surface opposite from the emitting surface. Each vertical emitting surfaces emit a laser beam. The assembly further includes one or more nozzles that directly spray a liquid onto the exposed substrate surfaces.

Abstract: A semiconductor laser diode that internally converts one or more short wavelength “pump” beams to an output beam at a longer wavelength using nonlinear optical frequency conversion in the semiconductor. Modal phase matching of the pump and output beams in a semiconductor waveguide allows the conversion process to proceed with high efficiency.

Abstract: A semiconductor diode laser that generates light at wavelengths longer than conventional diode lasers. The laser includes a first gain element that generates a first “pump” laser beam having a first optical frequency and a second gain element that generates a second “pump” laser beam having a second optical frequency. The first and second pump beams are mixed in a third section to create a wave of nonlinear polarization oscillating at the difference frequency of the first two beams. Power from this nonlinear polarization wave is coupled by a near-field phase grating to excite an electromagnetic output beam which propagates perpendicular to the laser axis. The frequency of this output beam may be much smaller than either pump beam.

Abstract: A high powered laser diode that includes a pumped stripe section with a varying index of refraction. The varying index of refraction can reduce the self-focusing phenomenon found in high powered laser diodes in the prior art, thereby providing a high quality output beam. The index of refraction can vary from one side of the pumped stripe section to the other side of the pumped stripe section. The index can be varied by varying a structural characteristic of the pumped stripe section such as the doping or thickness of the layers within the laser diode. A thermal gradient can be created across the pumped stripe section to vary the index of refraction. The thermal gradient can be created by integrating a heating element along one side of the pumped stripe section or creating unequal current flow through the pumped stripe section.

Abstract: A semiconductor laser that includes a feedback laser section and an amplifier section. The feedback laser section generates a laser beam that has a maximum intensity at a first wavelength. The amplifier section amplifies the laser beam into a high powered beam. The amplifier section is constructed to have a peak optical gain located at a second wavelength that is offset from the first wavelength. Offsetting the wavelength generated in the feedback laser section from the peak gain wavelength of the amplifier section will result in an output beam that has a much broader linewidth that the feedback section alone. The broader linewidth is relatively stable even when part of the light reflects back into the semiconductor laser.

Abstract: A laser diode that has a pluality of semiconductor epitaxial layers grown on a substrate. The diode includes a light generating layer located between two layers of n-type material. A thin layer of p-type material is interposed between the active layer and an n-type layer. The diode includes a layer of n-doped material located adjacent to a substrate. The laser diode further includes an active layer located between the n-doped layer and a layer of p-doped material. An additional layer of n-doped material is located between the p-doped material and a contact. The contact is biased so as to induce a recombination of holes and electrons in the active region and generate light. The light travels along the active layer, p-doped layer and in both n-doped layers. Having an n-doped layer between the contact and p-doped layer reduces the amount of photon absorption within the laser diode.

Abstract: A semiconductor diode laser that generates light at wavelengths longer than conventional diode lasers. The laser includes a first gain element that generates a first “pump” laser beam having a first frequency and a second gain element that generates a second “pump” laser beam having a second frequency. A nonlinear frequency conversion section mixes the two beams to generate a third co-propagating optical beam at the difference frequency. To improve efficiency, the frequency conversion section is furnished with an array of charged electrodes that spatially modulate the nonlinear susceptibility and phase-match the three beams.

Abstract: A semiconductor diode laser that generates light at wavelengths longer than conventional diode lasers. The laser includes a first gain element that generates a first “pump” laser beam having a first optical frequency and a second gain element that generates a second “pump” laser beam having a second optical frequency. The first and second pump beams are mixed in a third section to create a wave of nonlinear polarization oscillating at the difference frequency of the first two beams. Power from this nonlinear polarization wave is coupled by a near-field phase grating to excite an electromagnetic output beam which propagates perpendicular to the laser axis. The frequency of this output beam may be much smaller than either pump beam.

Abstract: A semiconductor diode laser that generates light at wavelengths longer than conventional diode lasers. The laser includes a first gain element that generates a first “pump” laser beam having a first frequency and a second gain element that generates a second “pump” laser beam having a second frequency. A nonlinear frequency conversion section mixes the two beams to generate a third co-propagating optical beam at the difference frequency. To improve efficiency, the frequency conversion section is furnished with an array of charged electrodes that spatially modulate the nonlinear susceptibility and phase-match the three beams.

Abstract: A semiconductor laser that has a reflective surface. The reflective surface redirects the light of an edge emitting laser diode to emit from the top or bottom surface of the diode. The laser may include a gain layer and a feedback layer located within a semiconductive die. The gain and feedback layers generate a laser beam that travels parallel to the surface of the die. The reflective surface reflects the laser beam 90 degrees so that the beam emits the die from the top or bottom surface. The reflective surface can be formed by etching a vicinally oriented III-V semiconductive die so that the reflective surface extends along a (111)A crystalline plane of the die.

Abstract: A semiconductor laser that has a distributed feedback laser section and an amplifier section. The amplifier section may be tapered to lower the optical power density particularly at an output facet of the laser. The semiconductor laser also includes a reflective element that reflects light from the distributed feedback laser section to the amplifier section. The reflective element folds the optical path of the light beam. Folding the optical path allows the amplifier section area to be increased without enlarging the semiconductor die size. The larger amplifier section will increase the output power of the laser. Likewise, the reflective element will allow the semiconductor die size to be reduced without decreasing the optical power of the laser.

Abstract: A laser diode that has a pluality of semiconductor epitaxial layers grown on a substrate. The diode includes a light generating layer located between two layers of n-type material. A thin layer of p-type material is interposed between the active layer and an n-type layer. The Diode includes a layer of n-doped material located adjacent to a substrate. The laser diode further includes an active layer located between the n-doped layer and a layer of p-doped material. An additional layer of n-doped material is located between the p-doped material and a contact. The contact is biased so as to induce a recombination of holes and electrons in the active region and generate light. The light travels along the active layer, p-doped layer and in both n-doped layers. Having an n-doped layer between the contact and p-doped layer reduces the amount of photon absorption within the laser diode. This improves the energy efficiency, current requirements and the ultimate life of the laser diode.

Abstract: A laser diode array that includes a plurality of laser stripes each separated by an unpumped region. The array includes at least one first laser stripe and at least one second laser stripe. The first laser stripe emits a first laser beam. The second laser stripe emits a second laser beam. A phase shifter is connected to the stripes so that the phase of the second laser beam is shifted to be in phase with first laser beam. The resultant output beam of the array is a high power, high quality, diffraction limited beam.

Abstract: A high powered laser diode that includes a pumped stripe section with a varying index of refraction. The varying index of refraction can reduce the self-focusing phenomenon found in high powered laser diodes in the prior art, thereby providing a high quality output beam. The index of refraction can vary from one side of the pumped stripe section to the other side of the pumped stripe section. The index can be varied by varying a structural characteristic of the pumped stripe section such as the doping or thickness of the layers within the laser diode. A thermal gradient can be created across the pumped stripe section to vary the index of refraction. The thermal gradient can be created by integrating a heating element along one side of the pumped stripe section or creating unequal current flow through the pumped stripe section.

Abstract: A semiconductor laser that includes a feedback laser section and an amplifier section. The feedback laser section generates a laser beam that has a maximum intensity at a first wavelength. The amplifier section amplifies the laser beam into a high powered beam. The amplifier section is constructed to have a peak optical gain located at a second wavelength that is offset from the first wavelength. Offsetting the wavelength generated in the feedback laser section from the peak gain wavelength of the amplifier section will result in an output beam that has a much broader linewidth that the feedback section alone. The broader linewidth is relatively stable even when part of the light reflects back into the semiconductor laser.

Abstract: A laser system that has a chirped grating and an optical combiner coupled to a laser diode. The laser diode generates a laser pulse in response to an electrical pulse from a driver circuit. Because of various internal effects the rear portion of the laser pulse contains light with longer wavelengths than light at the front end of the pulse. The laser pulse travels through the combiner and into the chirped grating. The chirped grating has a spacing that decreases from a proximal end to a distal end of the grating. The longer wavelengths of the laser pulse reflect from the proximal end of the grating. The shorter wavelengths reflect from the distal end of the grating and combine with the longer wavelengths in the combiner. The shorter wavelengths, which were at the front of the pulse, have to travel a greater distance than the longer wavelengths. The greater distance spatially shifts the shorter wavelengths back into the longer wavelengths of the pulse. The result is a short high powered laser pulse.

Abstract: A laser diode array that includes a plurality of laser stripes each separated by an unpumped region. The array includes at least one first laser stripe and at least one second laser stripe. The first laser stripe emits a first laser beam. The second laser stripe emits a second laser beam. A phase shifter is connected to the stripes so that the phase of the second laser beam is shifted to be in phase with first laser beam. The resultant output beam of the array is a high power, high quality, diffraction limited beam.

Abstract: A semiconductor laser that has a distributed feedback laser section and an amplifier section. The amplifier section may be tapered to lower the optical power density particularly at an output facet of the laser. The semiconductor laser also includes a reflective element that reflects light from the distributed feedback laser section to the amplifier section. The reflective element folds the optical path of the light beam. Folding the optical path allows the amplifier section area to be increased without enlarging the semiconductor die size. The larger amplifier section will increase the output power of the laser. Likewise, the reflective element will allow the semiconductor die size to be reduced without decreasing the optical power of the laser.