Patents by Inventor Jeffrey E. Ungar

Jeffrey E. Ungar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6493132
    Abstract: The present invention, a monolithic, high power, single mode electro-optic device is disclosed. The electro-optic device generally includes an electrically pumped device with a pn junction and an optically pumped device evanescently coupled to the electrically pumped device. In operation the electrically pumped device is driven by an external source into a high energy state to emit photons at a first wavelength. The optically pumped device is at a low energy state so as to absorb the emitted photons and re-radiated light at a second wavelength.
    Type: Grant
    Filed: February 14, 2001
    Date of Patent: December 10, 2002
    Assignee: Agere Systems Guardian Corp.
    Inventors: Henry A. Blauvelt, Robert M. Lammert, Jeffrey E. Ungar
  • Publication number: 20020171919
    Abstract: The present invention, a monolithic, high power, single mode electro-optic device is disclosed. The electro-optic device generally includes an electrically pumped device with a pn junction and an optically pumped device evanescently coupled to the electrically pumped device. In operation the electrically pumped device is driven by an external source into a high energy state to emit photons at a first wavelength. The optically pumped device is at a low energy state so as to absorb the emitted photons and re-radiated light at a second wavelength.
    Type: Application
    Filed: February 14, 2001
    Publication date: November 21, 2002
    Inventors: Henry A. Blauvelt, Robert M. Lammert, Jeffrey E. Ungar
  • Patent number: 4942585
    Abstract: A heterostructure semiconductor laser provides high power by having a wide output facet so that the power density at the output facet is low enough to avoid catastrophic optical mirror damage. Single transverse mode oscillation occurs in the center of a pumped trapezoidal gain medium layer between the wide output facet and a relatively narrower mirror facet. Stimulated emission of radiation in the balance of the pumped trapezoidal area produces high power output. At the opposite end of the gain layer from the output facet, a parallel edged, index guided pumped region of the gain layer provides a single transverse mode wave guide for assuring single mode output. Preferably the narrower facet has a higher reflectivity than the wider facet, and a non-absorbing window is provided at the wider facet, for lowest lasing threshold and highest power output.
    Type: Grant
    Filed: December 22, 1987
    Date of Patent: July 17, 1990
    Assignee: Ortel Corporation
    Inventor: Jeffrey E. Ungar
  • Patent number: 4856017
    Abstract: A distributed feedback heterostructure semiconductor laser provides a single frequency at high power by having a wide output facet so that the power density at the output facet is low enough to avoid catastrophic optical mirror damage. Oscillation is obtained in the center of a pumped trapezoidal gain medium layer between the wide output facet and a relatively narrow rear facet. Stimulated emission of radiation in the balance of the pumped trapezoidal area produces high power output. At the opposite end of the gain layer from the output facet, a parallel edged, index guided pumped region of the gain layer provides a single transverse mode wave guide. A distributed feedback grating, preferably in the region with parallel sides, selects a single longitudinal oscillation mode independent of Fabry-Perot oscillation between the facets. Preferably, the output facet is anti-reflective for minimizing Fabry-Perot oscillation.
    Type: Grant
    Filed: December 22, 1987
    Date of Patent: August 8, 1989
    Assignee: Ortel Corporation
    Inventor: Jeffrey E. Ungar