Abstract: A novel method to produce thin films spatially disposed on desired areas of workpieces is disclosed. Examples of include the formation of a yttria stabilized zirconia (YSZ) film formed on a desired portion of a stainless steel interconnect for solid oxide fuel cells by Atomic Layer Deposition (ALD). A number of methods to produce the spatially disposed YSZ film structures are described including polymeric and silicone rubber masks. The thin film structures have utility for preventing the reaction of glasses with metals, in particular alkali-earth containing glasses with ferritic stainless steels, allowing high temperature bonding of these materials.

Abstract: A novel method to produce ALD films disposed on powders is disclosed. Examples include the formation of a cobalt doped zirconia (CDZ), hafnia, and cobalt doped hafnia (CDH) films on lanthanum strontium cobalt iron oxide (LSCF) powder for solid oxide fuel cell cathodes. The coated powders are sintered into porous cathodes that have utility for preventing the migration of cations in the powder to the surface of the sintered cathode and/or other performance enhancing attributes.

Abstract: An apparatus and method is described to coat small and large quantities of solid particles using atomic layer deposition, with increased material utilization and decreased cycle times. The resulting higher coating efficiency ALD process is achieved by a controlled pressure differential acting across a rotating porous vessel that contains a plurality of solid particles. The apparatus is comprised of two coaxial cylindrical porous vessels with a means for one to rotate, and a two stage rotary feedthrough with a specialized hollowed out shaft, which enables both rotation of the vessel and reactant, purge, and product gas transport across a particle bed that undergoes mixing.

Abstract: A novel method to modify the surface of lanthanum and strontium containing cathode powders before or after sintering by depositing layers of gadolinium doped ceria (GDC) and/or samarium doped ceria or similar materials via atomic layer deposition on the powders. The surface modified powders are sintered into porous cathodes that have utility enhancing the electrochemical performance of the cathodes, particularly for use in solid oxide fuel cells. Similar enhancements are observed for surface treatment of sintered cathodes.

Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract: Novel photocatalytic devices are disclosed, that utilize ultrathin titania based photocatalytic materials formed on optical elements with high transmissivity, high reflectivity or scattering characteristics, or on high surface area or high porosity open cell materials. The disclosure includes methods to fabricate such devices, including MOCVD and ALD. The disclosure also includes photocatalytic systems that are either standalone or combined with general illumination (lighting) utility, and which may incorporate passive fluid exchange, user configurable photocatalytic optical elements, photocatalytic illumination achieved either by the general illumination light source, dedicated blue or UV light sources, or combinations thereof, and operating methodologies for combined photocatalytic and lighting systems.

Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

Abstract: A novel method to produce thin films spatially disposed on desired areas of workpieces is disclosed. Examples of include the formation of a yttria stabilized zirconia (YSZ) film formed on a desired portion of a stainless steel interconnect for solid oxide fuel cells by Atomic Layer Deposition (ALD). A number of methods to produce the spatially disposed YSZ film structures are described including polymeric and silicone rubber masks. The thin film structures have utility for preventing the reaction of glasses with metals, in particular alkali-earth containing glasses with ferritic stainless steels, allowing high temperature bonding of these materials.

Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract: Novel photocatalytic devices are disclosed, that utilize ultrathin titania based photocatalytic materials formed on optical elements with high transmissivity, high reflectivity or scattering characteristics, or on high surface area or high porosity open cell materials. The disclosure includes methods to fabricate such devices, including MOCVD and ALD. The disclosure also includes photocatalytic systems that are either standalone or combined with general illumination (lighting) utility, and which may incorporate passive fluid exchange, user configurable photocatalytic optical elements, photocatalytic illumination achieved either by the general illumination light source, dedicated blue or UV light sources, or combinations thereof, and operating methodologies for combined photocatalytic and lighting systems.

Abstract: Novel photocatalytic devices are disclosed, that utilize ultrathin titania based photocatalytic materials formed on optical elements with high transmissivity, high reflectivity or scattering characteristics, or on high surface area or high porosity open cell materials. The disclosure includes methods to fabricate such devices, including MOCVD and ALD. The disclosure also includes photocatalytic systems that are either standalone or combined with general illumination (lighting) utility, and which may incorporate passive fluid exchange, user configurable photocatalytic optical elements, photocatalytic illumination achieved either by the general illumination light source, dedicated blue or UV light sources, or combinations thereof, and operating methodologies for combined photocatalytic and lighting systems.

Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.