Patents by Inventor Jeffrey P. Gambino

Jeffrey P. Gambino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10629482
    Abstract: A device structure is formed using a silicon-on-insulator substrate. The device structure includes a first switch and a second switch that are formed within a device layer of the silicon-on-insulator substrate and between a buried insulator layer of the silicon on-insulator substrate and a dielectric layer disposed above and coupled to the device layer. An electrically-conducting connection is located in a first trench extending from the device layer through the buried insulator layer to a trap-rich layer such that the electrically-conducting connection is coupled with a substrate.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: April 21, 2020
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey P. Gambino, Mark D. Jaffe, Steven M. Shank, Anthony K. Stamper
  • Patent number: 10622506
    Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: April 14, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: John J. Ellis-Monaghan, Jeffrey P. Gambino, Mark D. Jaffe, Kirk D. Peterson
  • Patent number: 10615302
    Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: April 7, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: John J. Ellis-Monaghan, Jeffrey P. Gambino, Mark D. Jaffe, Kirk D. Peterson
  • Patent number: 10615137
    Abstract: A method of manufacturing a bond pad structure may include depositing an aluminum-copper (Al—Cu) layer over a dielectric layer; and depositing an aluminum-chromium (Al—Cr) layer directly over the Al—Cu layer.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: April 7, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Charles L. Arvin, Jeffrey P. Gambino, Charles F. Musante, Christopher D. Muzzy, Wolfgang Sauter
  • Patent number: 10607899
    Abstract: An apparatus for and methods of repairing and manufacturing integrated circuits using the apparatus. The apparatus, comprising: a vacuum chamber containing: a movable stage configured to hold a substrate; an inspection and analysis probe; a heat source; a gas injector; and a gas manifold connecting multiple gas sources to the gas injector.
    Type: Grant
    Filed: January 3, 2017
    Date of Patent: March 31, 2020
    Assignee: International Business Machines Corporation
    Inventors: Shawn A. Adderly, Jeffrey P. Gambino, Eric A. Joseph, Anthony C. Speranza
  • Patent number: 10600751
    Abstract: A pillar-type connection includes a first conductive layer that includes a hollow core. A second conductive layer is connected to the first conductive layer defining a conductive pillar that includes a top surface defining a recess aligned with the hollow core. A conductive via terminates at a top surface of the first conductive layer.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: March 24, 2020
    Assignee: International Business Machines Corporation
    Inventors: Charles L. Arvin, Jeffrey P. Gambino, Christopher D. Muzzy, Wolfgang Sauter
  • Publication number: 20200083188
    Abstract: A pillar-type connection includes a first conductive layer that includes a hollow core. A second conductive layer is connected to the first conductive layer defining a conductive pillar that includes a top surface defining a recess aligned with the hollow core.
    Type: Application
    Filed: September 19, 2019
    Publication date: March 12, 2020
    Inventors: Charles L. Arvin, Jeffrey P. Gambino, Christopher D. Muzzy, Wolfgang Sauter
  • Patent number: 10573554
    Abstract: A device structure with a backside contact includes a silicon-on-insulator substrate including a device layer, a buried insulator layer, and an electrically-conducting connection in a trench. A final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: February 25, 2020
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey P. Gambino, Mark D. Jaffe, Steven M. Shank, Anthony K. Stamper
  • Patent number: 10566235
    Abstract: A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming an electrically-conducting connection in a trench. The handle wafer is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: February 18, 2020
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey P. Gambino, Mark D. Jaffe, Steven M. Shank, Anthony K. Stamper
  • Publication number: 20200049651
    Abstract: Moisture detection and ingression monitoring systems and methods of manufacture are provided. The moisture detection structure includes chip edge sealing structures including at least one electrode forming a capacitor structured to detect moisture ingress within an integrated circuit. The at least one electrode and a second electrode of the capacitor is biased to ground and to a moisture detection circuit or vice versa, respectively.
    Type: Application
    Filed: October 17, 2019
    Publication date: February 13, 2020
    Inventors: Fen CHEN, Jeffrey P. GAMBINO, Carole D. GRAAS, Wen LIU, Prakash PERIASAMY
  • Patent number: 10559743
    Abstract: A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: February 11, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Jeffrey P. Gambino, Mark D. Jaffe, Anthony K. Stamper, Randy L. Wolf
  • Patent number: 10545110
    Abstract: Moisture detection and ingression monitoring systems and methods of manufacture are provided. The moisture detection structure includes chip edge sealing structures including at least one electrode forming a capacitor structured to detect moisture ingress within an integrated circuit. The at least one electrode and a second electrode of the capacitor is biased to ground and to a moisture detection circuit or vice versa, respectively.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: January 28, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Fen Chen, Jeffrey P. Gambino, Carole D. Graas, Wen Liu, Prakash Periasamy
  • Patent number: 10545111
    Abstract: Moisture detection and ingression monitoring systems and methods of manufacture are provided. The moisture detection structure includes chip edge sealing structures including at least one electrode forming a capacitor structured to detect moisture ingress within an integrated circuit. The at least one electrode and a second electrode of the capacitor is biased to ground and to a moisture detection circuit or vice versa, respectively.
    Type: Grant
    Filed: April 25, 2019
    Date of Patent: January 28, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Fen Chen, Jeffrey P. Gambino, Carole D. Graas, Wen Liu, Prakash Periasamy
  • Publication number: 20200014171
    Abstract: A dual bond pad structure for a wafer with laser die attachment and methods of manufacture are disclosed. The method includes forming a bonding layer on a surface of a substrate. The method further includes forming solder bumps on the bonding layer. The method further includes patterning the bonding layer to form bonding pads some of which comprise the solder bumps thereon. The method further includes attaching a laser diode to selected bonding pads using solder connections formed on the laser diode. The method further includes attaching an interposer substrate to the solder bumps formed on the bonding pads.
    Type: Application
    Filed: September 17, 2019
    Publication date: January 9, 2020
    Inventors: Jeffrey P. GAMBINO, Richard S. GRAF, Robert K. LEIDY, Jeffrey C. MALING
  • Publication number: 20190386168
    Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
    Type: Application
    Filed: August 27, 2019
    Publication date: December 19, 2019
    Inventors: John J. ELLIS-MONAGHAN, Jeffrey P. GAMBINO, Mark D. JAFFE, Kirk D. PETERSON
  • Publication number: 20190362977
    Abstract: A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path.
    Type: Application
    Filed: August 7, 2019
    Publication date: November 28, 2019
    Inventors: Jeffrey P. GAMBINO, Thomas J. HARTSWICK, Zhong-Xiang HE, Anthony K. STAMPER, Eric J. WHITE
  • Publication number: 20190355865
    Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
    Type: Application
    Filed: August 5, 2019
    Publication date: November 21, 2019
    Inventors: John J. ELLIS-MONAGHAN, Jeffrey P. GAMBINO, Mark D. JAFFE, Kirk D. PETERSON
  • Patent number: 10476227
    Abstract: A dual bond pad structure for a wafer with laser die attachment and methods of manufacture are disclosed. The method includes forming a bonding layer on a surface of a substrate. The method further includes forming solder bumps on the bonding layer. The method further includes patterning the bonding layer to form bonding pads some of which comprise the solder bumps thereon. The method further includes attaching a laser diode to selected bonding pads using solder connections formed on the laser diode. The method further includes attaching an interposer substrate to the solder bumps formed on the bonding pads.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: November 12, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jeffrey P. Gambino, Richard S. Graf, Robert K. Leidy, Jeffrey C. Maling
  • Patent number: 10453987
    Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: October 22, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: John J. Ellis-Monaghan, Jeffrey P. Gambino, Mark D. Jaffe, Kirk D. Peterson
  • Patent number: 10446421
    Abstract: Systems and methods are provided for implementing a crystal oscillator to monitor and control semiconductor fabrication processes. More specifically, a method is provided for that includes performing at least one semiconductor fabrication process on a material of an integrated circuit (IC) disposed within a processing chamber. The method further includes monitoring by at least one electronic oscillator disposed within the processing chamber for the presence or absence of a predetermined substance generated by the at least one semiconductor fabrication process. The method further includes controlling the at least one semiconductor fabrication process based on the presence or absence of the predetermined substance detected by the at least one electronic oscillator.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: October 15, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Cyril Cabral, Jr., Lawrence A. Clevenger, John M. Cohn, Jeffrey P. Gambino, William J. Murphy, Anthony J. Telensky