Patents by Inventor Jeffrey S. Lille

Jeffrey S. Lille has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7071010
    Abstract: In one illustrative example, a three terminal magnetic sensor includes a collector region made of a semiconductor material, a base region, and an emitter region. An insulator layer is formed between the collector region and a carrier substrate body which carries the three terminal magnetic sensor. The insulator layer serves to reduce a capacitance otherwise present between the collector region and magnetic media at a magnetic field sensing plane of the three terminal magnetic sensor. Thus, the insulator layer electrically isolates the collector region from the carrier substrate body. The structure may be formed through use of a separation by implanting oxygen (SIMOX) technique or a wafer-bonding technique, as examples.
    Type: Grant
    Filed: May 10, 2005
    Date of Patent: July 4, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventor: Jeffrey S. Lille
  • Patent number: 7024756
    Abstract: The method of making a magnetic head assembly includes forming a second pole piece layer that is recessed from a head surface, forming a reactive ion etchable (RIEable) pole tip forming layer on the second pole piece layer, forming an adhesion/stop layer of tantalum (Ta) on the pole tip forming layer, forming a photoresist mask on the adhesion/stop layer with an opening for patterning the adhesion/stop layer and the pole tip forming layer with another opening, reactive ion etching (RIE) through the opening to form the other opening, forming the second pole piece pole tip in the other opening with a top which is above a top of the adhesion/stop layer and chemical mechanical polishing (CMP) the top of the second pole piece pole tip until the CMP contacts the adhesion/stop layer. The invention also includes the magnetic head made by such a process.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: April 11, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Quang Le, Jui-lung Li, Jeffrey S. Lille, Son Van Nguyen
  • Patent number: 7016167
    Abstract: A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.
    Type: Grant
    Filed: April 3, 2003
    Date of Patent: March 21, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Robert E. Fontana, Jr., Jeffrey S. Lille
  • Patent number: 6999277
    Abstract: A magnetic head including a media heating device. Following the fabrication of the heating device, a sacrificial layer of material is deposited to protect the heating device during subsequent process steps. Thereafter, write head components, such as write head induction coils and/or a P1 pole pedestal are fabricated above the heating device, and the sacrificial layer is substantially consumed in protecting the heating device during the aggressive etching and milling steps used to create those components. Further components, including a second magnetic pole are thereafter fabricated to complete the fabrication of the write head portion of the magnetic head. The sacrificial layer may be comprised of alumina, or a material such as NiFe that can act as a seed layer for a subsequent head components such as the P1 pole pedestal.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: February 14, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Robert E. Fontana, Jr., Jeffrey S. Lille
  • Patent number: 6997784
    Abstract: A process for fabricating sliders with one or more sacrificial structures (extensions) that facilitate lapping to create the air-bearing surface (ABS) is described. Prior to separating individual sliders from a wafer, a mask of material that is not removable by deep reactive ion etching (DRIE) is patterned on the surface of the sliders. The mask outlines a sacrificial extension around portions of the magnetic transducer elements that are nearest the predetermined plane which will become the ABS. The sacrificial extension makes the surface of the slider which will be lapped non-planar. The sacrificial extension extends below the predetermined ABS plane. When the sliders are individually separated by DRIE, the shape of the mask including the sacrificial extension is projected down into and along the slider body.
    Type: Grant
    Filed: July 15, 2004
    Date of Patent: February 14, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard D. Bunch, Jeffrey S. Lille, Huey-Ming Tzeng
  • Patent number: 6980395
    Abstract: A high aspect ratio structure using topographical features to increase conformal coverage area provides high conductance. An insulation layer is disposed over a magnetic material. At least one trench is formed in the insulation layer to form a coil, where the at least one trench forms the coil with multiple coil windings. A plurality of topographical features is formed in at least one nonconfined area of the coil to increase conformal coverage area. A metal, such as copper, is deposited into the at least one trench and topographical features to form an inductive structure.
    Type: Grant
    Filed: October 31, 2002
    Date of Patent: December 27, 2005
    Assignee: International Business Machines Corporation
    Inventor: Jeffrey S. Lille
  • Patent number: 6956716
    Abstract: A magnetic head including a media heating device that is fabricated within the magnetic head structure. The media heating device is fabricated with diffusion barrier layers and/or adhesion layers beneath the heating device layers, between heating device layers and/or above the heating device layers. A diffusion barrier layer prevents the diffusion of the metal materials that comprise the heating device layers into layers that are disposed below and/or above the heating device, and adhesion layer promotes adhesion of the heating device to the magnetic head layers adjacent to the heating device. The diffusion barrier layer may be comprised of tantalum, tantalum nitride, other tantalum alloys, titanium, rhodium and ruthenium, and the adhesion layer may be comprised of tantalum, tantalum nitride, tantalum oxide, other tantalum alloys, titanium, nickel iron, chromium, platinum alloys, nickel alloys and aluminum oxide.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: October 18, 2005
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventor: Jeffrey S. Lille
  • Patent number: 6947246
    Abstract: A magnetic head structure having enhanced protrusion and having a first pole structure, a second pole structure forming a yoke with the fist pole, a coil structure disposed in the yoke, and a layer of partially cured polymer operatively coupled to the yoke. Also disclosed is a magnetic head having a first pole structure, a second pole structure forming a yoke with the fist pole, a coil structure disposed in the yoke, and a layer of at least partially insulative material operatively coupled to the read and/or write head for providing enhanced protrusion, the at least partially insulative material having a coefficient of thermal expansion higher than a coefficient of thermal expansion of fully cured hard bake novalac. Further embodiments include disk drive systems having the head structures described herein.
    Type: Grant
    Filed: August 29, 2003
    Date of Patent: September 20, 2005
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventor: Jeffrey S. Lille
  • Patent number: 6940693
    Abstract: An embodiment of a magnetic head of the present invention includes a media heating device that is fabricated within the magnetic head structure following the fabrication of the read head element of the magnetic head. The media heating device is preferably fabricated between the first and second magnetic pole layers and close to the ABS surface of the head. The heating device includes electrical leads and an electrically resistive heating element that is preferably comprised of TaSiN, NiCr or NiFe, and in the present invention one or both of the magnetic poles are utilized as an electrical lead of the heating device. The heating device serves to heat the magnetic media immediately prior to the passage of the magnetic media beneath the pole tip, which lowers the localized coercivity of the media and facilitates the writing of data to the media by the write head element of the magnetic head.
    Type: Grant
    Filed: September 29, 2003
    Date of Patent: September 6, 2005
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Jeffrey S. Lille, Hugo Alberto Emilio Santini
  • Patent number: 6870717
    Abstract: A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.
    Type: Grant
    Filed: May 16, 2002
    Date of Patent: March 22, 2005
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Jeffrey Robinson Childress, Robert Edward Fontana, Jr., Jeffrey S. Lille
  • Publication number: 20040196589
    Abstract: A magnetic head of the present invention includes a first magnetic pole that is exposed at the air bearing surface of the magnetic head and a second magnetic pole shaping layer that is not exposed at the air bearing surface. A layer of non-magnetic material is fabricated between the air bearing surface and the shaping layer, where the non-magnetic material is also electrically conductive. The pole tip of the magnetic head is electroplated on top of the non-magnetic electrically conductive material subsequent to the fabrication of the shaping layer, and in magnetic flux communication with the shaping layer.
    Type: Application
    Filed: April 1, 2003
    Publication date: October 7, 2004
    Inventor: Jeffrey S. Lille
  • Publication number: 20040165316
    Abstract: Embodiments include a method for forming a head suspension assembly. A spacer layer is formed in or on a silicon wafer. A transfer film including an opening defining the shape of a slider support membrane is provided, and the opening is filled with a resin material. The transfer film with the resin material therein is positioned over the silicon wafer so that at least a portion of the resin material is positioned adjacent to the spacer layer. The resin material is baked to form a glassy carbon material. The spacer layer is etched to form a trench in the silicon wafer adjacent to the glassy carbon material, and a slider is positioned on the glassy carbon material over the trench.
    Type: Application
    Filed: February 27, 2004
    Publication date: August 26, 2004
    Inventor: Jeffrey S. Lille
  • Publication number: 20040164049
    Abstract: Embodiments include a method for forming a head suspension assembly. A spacer layer is formed in or on a silicon wafer. A transfer film including an opening defining the shape of a slider support membrane is provided, and the opening is filled with a resin material. The transfer film with the resin material therein is positioned over the silicon wafer so that at least a portion of the resin material is positioned adjacent to the spacer layer. The resin material is baked to form a glassy carbon material. The spacer layer is etched to form a trench in the silicon wafer adjacent to the glassy carbon material, and a slider is positioned on the glassy carbon material over the trench.
    Type: Application
    Filed: February 27, 2004
    Publication date: August 26, 2004
    Inventor: Jeffrey S. Lille
  • Patent number: 6776690
    Abstract: A process for fabricating sliders with one or more sacrificial structures (extensions) that facilitate lapping to create the air-bearing surface (ABS) is described. Prior to separating individual sliders from a wafer, a mask of material that is not removable by deep reactive ion etching (DRIE) is patterned on the surface of the sliders. The mask outlines a sacrificial extension around portions of the magnetic transducer elements that are nearest the predetermined plane which will become the ABS. The sacrificial extension makes the surface of the slider which will be lapped non-planar. The sacrificial extension extends below the predetermined ABS plane. When the sliders are individually separated by DRIE, the shape of the mask including the sacrificial extension is projected down into and along the slider body. In one embodiment, additional guide rails are disposed along the outer edges of the slider to facilitate maintaining slider symmetry during the lapping process.
    Type: Grant
    Filed: August 19, 2002
    Date of Patent: August 17, 2004
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard D. Bunch, Jeffrey S. Lille, Huey-Ming Tzeng
  • Patent number: 6775103
    Abstract: A slider head assembly is provided which includes a slider head for reading/writing data on the surface of a rotating disc. The slider head is disposed in spaced relationship with respect to the disc for read/write (R/W) operations. The slider head assembly is comprised of a body portion having an essentially planar surface positioned to co-act with the surface of the disc with a proximal end and a distal end. The proximal end or trailing slider surface of the head assembly has a read/write element thereat. The distal end or leading slider surface of the assembly has an actuation device mounted thereon, having a surface the position of which can be modified by an external signal to change the position of the head with respect to the planar or air bearing surface (ABS) of the head assembly. This will change the characteristics of the boundary layer of air between the rotating disc and the head, causing the head assembly to move closer to or farther from the rotating disc when actuated by the external signal.
    Type: Grant
    Filed: April 2, 2001
    Date of Patent: August 10, 2004
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Soo-Choon Kang, Jeffrey S. Lille
  • Publication number: 20040105194
    Abstract: A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, a first insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a second insulating layer adjacent the bias layer, and a ferromagnetic layer over the second insulating layer, wherein the first insulating layer and the second insulating layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the first insulating layer and the second insulating layer. The bias layer is magnetic and is at least three times the thickness of the base region.
    Type: Application
    Filed: November 29, 2002
    Publication date: June 3, 2004
    Inventors: Robert E. Fontana, Jeffrey S. Lille
  • Publication number: 20040105195
    Abstract: A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.
    Type: Application
    Filed: April 3, 2003
    Publication date: June 3, 2004
    Inventors: Robert E. Fontana, Jeffrey S. Lille
  • Publication number: 20040085673
    Abstract: A method and apparatus for forming a high conductance, high aspect ratio structure in a single low temperature copper chemical vapor deposition step. The present invention includes topographical features to increase a conformal coverage area.
    Type: Application
    Filed: October 31, 2002
    Publication date: May 6, 2004
    Applicant: International Business Machines Corporation
    Inventor: Jeffrey S. Lille
  • Patent number: 6725526
    Abstract: Embodiments include a method for forming a head suspension assembly. A spacer layer is formed in or on a silicon wafer. A transfer film including an opening defining the shape of a slider support membrane is provided, and the opening is filled with a resin material. The transfer film with the resin material therein is positioned over the silicon wafer so that at least a portion of the resin material is positioned adjacent to the spacer layer. The resin material is baked to form a glassy carbon material. The spacer layer is etched to form a trench in the silicon wafer adjacent to the glassy carbon material, and a slider is positioned on the glassy carbon material over the trench.
    Type: Grant
    Filed: January 14, 2002
    Date of Patent: April 27, 2004
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventor: Jeffrey S. Lille
  • Patent number: 6696226
    Abstract: A method of making a magnetic read/write head using a single lithographic step to define both a write coil and a pole tip structure. The use of a thin image resist layer over a hard reactive-ion etch mask and image transfer techniques allows very high resolution optical lithography which can accommodate formation of a very compact coil and pole structure. The use of a single high resolution lithography step on a planarized structure to define both a write pole tip and a write coil coplanar with the write pole tip avoids the problems of reflective notching associated with lithography to define the pole tip in the vicinity of non-planar features of the coil structure and also eliminates alignment inaccuracies inherent in separate lithography processes for the coil and pole.
    Type: Grant
    Filed: November 8, 2002
    Date of Patent: February 24, 2004
    Assignee: International Business Machines Corporation
    Inventors: Thomas Edward Dinan, Jeffrey S. Lille, Hugo Alberto Emilio Santini