Abstract: A combustor for a turbine engine includes a first liner and a second liner forming a combustion chamber with the first liner. The combustion chamber is configured to receive an air-fuel mixture for combustion therein. The first liner is a first double wall liner with a first wall forming a portion of the combustion chamber and a second wall extending around at least a portion of the first wall to form a liner cavity with the first wall. The first wall defines a first wall orifice and the second wall defines a second wall orifice. The combustor further includes a first insert mounted on the second wall within the second wall orifice and extending through the first wall orifice. The first insert is configured to direct a first air jet through the second wall, through the first wall, and into the combustion chamber.

Abstract: A radio frequency amplifier includes a transistor, an input impedance matching circuit (e.g., a single-section T-match circuit or a multiple-section bandpass circuit), and a fractional harmonic resonator circuit. The input impedance matching circuit is coupled between an amplification path input and a transistor input terminal. An input of the fractional harmonic resonator circuit is coupled to the amplification path input, and an output of fractional harmonic resonator circuit is coupled to the transistor input terminal. The fractional harmonic resonator circuit is configured to resonate at a resonant frequency that is between a fundamental frequency of operation of the RF amplifier and a second harmonic of the fundamental frequency. According to a further embodiment, the fractional harmonic resonator circuit resonates at a fraction, x, of the fundamental frequency, wherein the fraction is between about 1.25 and about 1.9 (e.g., x?1.5).

Abstract: A liner for a combustor includes a first wall and a second wall extending around at least a portion of the first wall to form a liner cavity with the first wall. The first wall defines a first wall orifice and the second wall defines a second wall orifice. The liner further includes a first insert mounted on the second wall within the second wall orifice and extending through the first wall orifice. The first insert is configured to direct a first air jet through the second wall and the first wall. The first insert is formed by a tubular body portion extending through the first wall orifice and the second wall orifice, and a shoulder extending around the body portion that abuts the first side of the second wall. The shoulder has a first diameter and the first wall orifice has a second diameter, greater than the first diameter.

Abstract: The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

Abstract: The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

Abstract: Embodiments of RF amplifiers and RF amplifier devices include a transistor, a multiple-section bandpass filter circuit, and a harmonic termination circuit. The bandpass filter circuit includes a first connection node coupled to the amplifier input, a first inductive element coupled between the first connection node and a ground reference node, a first capacitance coupled between the first connection node and a second connection node, a second capacitance coupled between the second connection node and the ground reference node, and a second inductive element coupled between the second connection node and the transistor input. The harmonic termination circuit includes a third inductive element and a third capacitance connected in series between the transistor input and the ground reference node. The harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier.

Abstract: Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor with a drain-source capacitance that is relatively low, an output impedance matching circuit, and a harmonic termination circuit. The impedance matching circuit includes a harmonic termination circuit, which includes a first inductance (a first plurality of bondwires) and a first capacitance coupled in series between the transistor output and a ground reference node. An equivalent capacitance from a combination of the first inductive element and the first capacitance in series effectively increases the drain-source capacitance by at least 10 percent. The impedance matching circuit also includes a second inductance (a second plurality of bondwires) and a second capacitance coupled in series between the transistor output and the ground reference node, where the second inductance and the second capacitance are directly connected.

Abstract: Embodiments of RF amplifiers and RF amplifier devices include a transistor, a multiple-section bandpass filter circuit, and a harmonic termination circuit. The bandpass filter circuit includes a first connection node coupled to the amplifier input, a first inductive element coupled between the first connection node and a ground reference node, a first capacitance coupled between the first connection node and a second connection node, a second capacitance coupled between the second connection node and the ground reference node, and a second inductive element coupled between the second connection node and the transistor input. The harmonic termination circuit includes a third inductive element and a third capacitance connected in series between the transistor input and the ground reference node. The harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier.

Abstract: The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

Abstract: The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

Abstract: A downlight fixture includes an optic housing, a light-emitting diode (LED) array, and a lens-less reflector. The LED array emits directional light rays in a downward direction towards an illuminated target. The reflector is mounted within the optic housing and adjacent to the LED array. The reflector has a hyperbolic wall continuously extending between a narrow neck and a wide bell. The light rays are spread into a light beam within the reflector upon making contact solely with the hyperbolic wall.

Abstract: A lighting system includes a first luminaire. The first luminaire includes a first light source that generates a first light output. The first luminaire also includes a first visual feedback response source that generates a first visual feedback response output. Additionally, the first luminaire includes a first speaker that generates a first audio output. Further, the lighting system includes a second luminaire. The second luminaire includes a second light source that generates a second light output and a second visual feedback response source that generates a second visual feedback response output. Furthermore, the second luminaire includes a second speaker that generates a second audio output. The second audio output is different from the first audio output such that the first speaker and the second speaker output different audio components of a multichannel audio protocol output.

Abstract: A luminaire includes a light source positioned at a first level within a luminaire housing. The luminaire also includes a trim component positioned at a second level of the luminaire housing different from the first level. The trim component extends into a room from a ceiling surface and includes an aperture antenna that receives wireless signals and transmits wireless signals. Further, the luminaire includes a communication module that communicates wirelessly with one or more devices remote from the luminaire by controlling excitation of the aperture antenna.

Abstract: A luminaire includes a first light source positioned at a first level of a luminaire housing. The first light source generates a light output. The luminaire also includes a trim component positioned at a second level of the luminaire housing different from the first level, The trim component includes a visual feedback element that emits a visual feedback response. Further, the luminaire includes a control circuit positioned at the second level within the trim component. The control circuit controls operation of the visual feedback element.

Abstract: A luminaire includes a speaker positioned at a first depth within a luminaire housing and capable of generating an audio output from a speaker diaphragm. The luminaire also includes a light source that generates a light output. Further, the luminaire includes a light guide assembly positioned at a second depth within the luminaire housing different from the first depth. The light guide assembly includes an acoustically transparent area positioned along a sound path from the speaker diaphragm, and the light guide assembly extracts the light output from the light source and directs the light output away from the luminaire.

Abstract: Power amplifiers such as multi-path power amplifiers, systems employing such amplifiers, and methods of implementing amplifiers and amplifier systems are disclosed herein. In one example embodiment, a multi-path power amplifier includes a first semiconductor die with an integrated first transistor having a first source-to-drain pitch, and a second semiconductor die with an integrated second transistor having a second source-to-drain pitch, where the second source-to-drain pitch is smaller than the first source-to-drain pitch by at least 30 percent. In another example embodiment, a Doherty amplifier system includes a first semiconductor die with a first physical die area to total gate periphery ratio, and a second semiconductor die with a second physical die area to total gate periphery ratio, where the second physical die area to total gate periphery ratio is smaller than the first physical die area to total gate periphery ratio by at least 30 percent.

Abstract: Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor with a drain-source capacitance that is relatively low, an input impedance matching circuit, and an input-side harmonic termination circuit. The input impedance matching circuit includes a harmonic termination circuit, which in turn includes a first inductance (a first plurality of bondwires) and a first capacitance coupled in series between the transistor output and a ground reference node. The input impedance matching circuit also includes a second inductance (a second plurality of bondwires), a third inductance (a third plurality of bondwires), and a second capacitance coupled in a T-match configuration between the input lead and the transistor input. The first and second capacitances may be metal-insulator-metal capacitors in an integrated passive device.

Abstract: Power amplifiers such as multi-path power amplifiers, systems employing such amplifiers, and methods of implementing amplifiers and amplifier systems are disclosed herein. In one example embodiment, a multi-path power amplifier includes a first semiconductor die with an integrated first transistor having a first source-to-drain pitch, and a second semiconductor die with an integrated second transistor having a second source-to-drain pitch, where the second source-to-drain pitch is smaller than the first source-to-drain pitch by at least 30 percent. In another example embodiment, a Doherty amplifier system includes a first semiconductor die with a first physical die area to total gate periphery ratio, and a second semiconductor die with a second physical die area to total gate periphery ratio, where the second physical die area to total gate periphery ratio is smaller than the first physical die area to total gate periphery ratio by at least 30 percent.

Abstract: A combustor for a turbine engine includes a first liner and a second liner forming a combustion chamber with the first liner. The combustion chamber is configured to receive an air-fuel mixture for combustion therein. The first liner is a first double wall liner with a first wall forming a portion of the combustion chamber and a second wall extending around at least a portion of the first wall to form a liner cavity with the first wall. The first wall defines a first wall orifice and the second wall defines a second wall orifice. The combustor further includes a first insert mounted on the second wall within the second wall orifice and extending through the first wall orifice. The first insert is configured to direct a first air jet through the second wall, through the first wall, and into the combustion chamber.

Abstract: Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor with a drain-source capacitance that is relatively low, an output impedance matching circuit, and a harmonic termination circuit. The impedance matching circuit includes a harmonic termination circuit, which includes a first inductance (a first plurality of bondwires) and a first capacitance coupled in series between the transistor output and a ground reference node. An equivalent capacitance from a combination of the first inductive element and the first capacitance in series effectively increases the drain-source capacitance by at least 10 percent. The impedance matching circuit also includes a second inductance (a second plurality of bondwires) and a second capacitance coupled in series between the transistor output and the ground reference node, where the second inductance and the second capacitance are directly connected.