Abstract: A cooling apparatus for a power module including a plurality of cooling modules provided to be in contact with each of both surfaces of the power module, in which the cooling module includes a manifold cover provided with a plurality of guide walls extending in a first direction in a state of being spaced apart from each other and a pin plate having one surface being in contact with the power module and having a plurality of pins extending in a second direction crossing the first direction formed on the other surface thereof.

Abstract: A scanning method in a wireless local area network (WLAN) system is provided. The scanning method includes transmitting, by a station, a probe request frame and receiving, by the station, a probe response frame from an access point (AP). The AP determines whether to transmit the probe response frame in response to the probe request frame using information indicated by the probe request frame.

Abstract: A scanning method in a wireless local area network (WLAN) system is provided. The scanning method includes transmitting, by a station, a probe request frame and receiving, by the station, a probe response frame from an access point (AP). The AP determines whether to transmit the probe response frame in response to the probe request frame using information indicated by the probe request frame.

Abstract: Provided is a method of transmitting and receiving a frame for a multi-user multiple-input and multiple-output (MU-MIMO) communication in an access point (AP), the method including determining at least one transmission station (STA), transmitting, to the transmission STA, an uplink multi-user poll (UL MU poll) frame requesting a data frame, receiving the data frame from the at least one transmission STA simultaneously, and transmitting an acknowledgement (ACK) frame to the at least one transmission STA in response to the receiving.

Abstract: Provided is a method of transmitting and receiving a frame for a multi-user multiple-input and multiple-output (MU-MIMO) communication in an access point (AP), the method including determining at least one transmission station (STA), transmitting, to the transmission STA, an uplink multi-user poll (UL MU poll) frame requesting a data frame, receiving the data frame from the at least one transmission STA simultaneously, and transmitting an acknowledgement (ACK) frame to the at least one transmission STA in response to the receiving.

Abstract: Provided is a method of transmitting and receiving a frame for a multi-user multiple-input and multiple-output (MU-MIMO) communication in an access point (AP), the method including determining at least one transmission station (STA), transmitting, to the transmission STA, an uplink multi-user poll (UL MU poll) frame requesting a data frame, receiving the data frame from the at least one transmission STA simultaneously, and transmitting an acknowledgement (ACK) frame to the at least one transmission STA in response to the receiving.

Abstract: A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate electrode, an active layer including an oxide semiconductor disposed on the gate insulation layer, an insulating interlayer disposed on the gate insulation layer to cover the active layer, a protection structure including a plurality of metal oxide layers disposed on the insulating interlayer, and a source electrode and a drain electrode disposed on the protection structure.

Abstract: A scanning method in a wireless local area network (WLAN) system is provided. The scanning method includes transmitting, by a station, a probe request frame and receiving, by the station, a probe response frame from an access point (AP). The AP determines whether to transmit the probe response frame in response to the probe request frame using information indicated by the probe request frame.

Abstract: A scanning method in a wireless local area network (WLAN) system is provided. The scanning method includes transmitting, by a station, a probe request frame and receiving, by the station, a probe response frame from an access point (AP). The AP determines whether to transmit the probe response frame in response to the probe request frame using information indicated by the probe request frame.

Abstract: Provided is a method of transmitting and receiving a frame for a multi-user multiple-input and multiple-output (MU-MIMO) communication in an access point (AP), the method including determining at least one transmission station (STA), transmitting, to the transmission STA, an uplink multi-user poll (UL MU poll) frame requesting a data frame, receiving the data frame from the at least one transmission STA simultaneously, and transmitting an acknowledgement (ACK) frame to the at least one transmission STA in response to the receiving

Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])?0.3??(1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5??(2), [Zn]/([In]+[Zn]+[Sn])?0.83??(3), and 0.1?[In]/([In]+[Zn]+[Sn])??(4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.

Abstract: Provided is a method of transmitting and receiving a frame for a multi-user multiple-input and multiple-output (MU-MIMO) communication in an access point (AP), the method including determining at least one transmission station (STA), transmitting, to the transmission STA, an uplink multi-user poll (UL MU poll) frame requesting a data frame, receiving the data frame from the at least one transmission STA simultaneously, and transmitting an acknowledgement (ACK) frame to the at least one transmission STA in response to the receiving.

Abstract: The present disclosure relates to a method and apparatus for relay duplexing in a wireless local area network. In an aspect of the present disclosure, a method for relay duplexing in a wireless local area network may be provided. The method may include monitoring, by a backup station (STA), a status of a relay; when determining that a failure occurred at the relay, activating the backup STA as a relay; and establishing, by the backup STA, an association with a STA that has been associated with the relay.

Abstract: A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.

Abstract: Disclosed are a method and an apparatus for transmitting and receiving data in a Wireless Local Area Network (WLAN) system. A method for transmitting data may comprise generating a physical layer (PHY) frame including a payload in which a plurality of Medium Access Control protocol data units (MPDUs) are multiplexed; and transmitting the PHY frame, wherein the PHY frame includes information on subcarriers occupied by each of the plurality of MPDUs in an Orthogonal Frequency Division Multiplexing (OFDM) symbol of the payload. Therefore, data transmission efficiency in a WLAN system can be enhanced.

Abstract: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.

Abstract: Provided is an access point (AP) for providing wireless communication to a plurality of stations (STAs), the AP including a type determiner to determine a type of each of the plurality of STAs, and an association identification (AID) allocator to allocate AIDs to the plurality of STAs, respectively, based on the determined type such that AIDs corresponding to an identical type among the allocated AIDs are clustered.

Abstract: Provided is a method of transmitting and receiving a frame for a multi-user multiple-input and multiple-output (MU-MIMO) communication in an access point (AP), the method including determining at least one transmission station (STA), transmitting, to the transmission STA, an uplink multi-user poll (UL MU poll) frame requesting a data frame, receiving the data frame from the at least one transmission STA simultaneously, and transmitting an acknowledgement (ACK) frame to the at least one transmission STA in response to the receiving.

Abstract: Provided is a thin film transistor (TFT) that includes a first electrode on a substrate separated from a second electrode, an oxide semiconductor pattern on the second electrode including a channel region, a third electrode on the oxide semiconductor pattern, a first insulating layer on the substrate including the third electrode including first contact holes exposing a part of the first electrode, a part of the second electrode, and a part of the third electrode, a gate electrode on the first insulating layer and corresponding to a part of the oxide semiconductor pattern, a second insulating layer on the substrate including the gate electrode including a second contact hole corresponding to the first contact hole that exposes a part of the second electrode, and a pixel electrode on the second insulating layer electrically connected to the second electrode through the first contact hole and the second contact hole.

Abstract: A thin film transistor array panel includes a substrate, a light blocking film disposed on the substrate, a buffer layer covering the light blocking film, and a channel region disposed on the buffer layer. A source region and a drain region are disposed in the same layer as the channel region. A gate insulating layer is disposed on the channel region, and a gate electrode overlaps the channel region, with the gate insulating layer interposed between the gate electrode and the channel region. A passivation layer is disposed on the gate electrode, the source region, the drain region, and the buffer layer. A source electrode and a drain electrode are disposed on the passivation layer, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than in the channel region.