Abstract: An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.

Abstract: A display substrate includes a gate electrode on a base substrate, an active pattern which overlaps the gate electrode and includes a metal oxide semiconductor, an insulation pattern on the active pattern, a source electrode which contacts the active pattern, a drain electrode which contacts the active pattern and is spaced apart from the source electrode, and a first passivation layer which covers the active pattern and the insulation pattern, and includes fluorine, where the active pattern includes a first portion which directly contacts the insulation pattern and overlaps the gate electrode and the insulation pattern, a second portion which contacts the first passivation layer and has an electrical conductivity substantially larger than that of the first portion, a third portion which contacts the first passivation layer, has an electrical conductivity substantially larger than that of the first portion and is spaced apart from the second portion.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])??0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])?2.28×[Zn]/([Zn]+[Sn])?2.01 (2) [In]/([In]+[Zn]+[Sn])?1.1×[Zn]/([Zn]+[Sn])?0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

Abstract: An ACK method is provided by a receiving device in a WLAN. The receiving device receives a plurality of data units having a plurality of TIDs and transmits an ACK frame including a plurality of ACK information fields for at least part of the plurality of data units. An ACK information field for a data unit satisfying a first condition among the plurality of ACK information fields includes a TID and a block ACK bitmap indicating whether the data unit has been successfully received. An ACK information field for a data unit satisfying a second condition and having been successfully received among the plurality of ACK information fields includes the first TID and does not include a block ACK bitmap.

Abstract: Provided is a communication control apparatus for controlling data transmission performed by a first communication module and a second communication module, each using a different communication scheme, the apparatus including a storing unit to store, in a data structure, channel information on a communication module for avoiding communication interference between the first communication module and the second communication module, and a processor to set, based on the channel information, a channel different from a channel used by the first communication module as a channel of the second communication module, wherein the first communication module and the second communication module are included in an identical device.

Abstract: A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gA using a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gD and values of an interface state-density-function Dit over the entire energy band in the band gap.

Abstract: Disclosed are a method and an apparatus for transmitting and receiving data in a Wireless Local Area Network (WLAN) system. A method for transmitting data may comprise generating a physical layer (PHY) frame including a payload in which a plurality of Medium Access Control protocol data units (MPDUs) are multiplexed; and transmitting the PHY frame, wherein the PHY frame includes information on subcarriers occupied by each of the plurality of MPDUs in an Orthogonal Frequency Division Multiplexing (OFDM) symbol of the payload. Therefore, data transmission efficiency in a WLAN system can be enhanced.

Abstract: A thin film transistor and a manufacturing method thereof. The thin film transistor includes: a gate electrode; a gate insulating layer disposed on the gate electrode; a first semiconductor disposed on the gate insulating layer; a second semiconductor disposed on the first semiconductor and having a different plane shape from the first semiconductor; and a source electrode and a drain electrode that are disposed on the second semiconductor and face each other.

Abstract: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.

Abstract: The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: A display device and a manufacturing method thereof with improved performance and low manufacturing complexity are provided. One inventive aspect includes: a first control electrode, a semiconductor layer, an etch stop layer, a first input electrode and a first output electrode, a third control electrode, a passivation layer and a pixel electrode. The third control electrode is formed on the etch stop layer. The passivation layer is formed on the first electrode, the first output electrode and the third control electrode. The pixel electrode is formed on the passivation layer and connects to the first output electrode.

Abstract: The present invention relates to a thin film transistor, a thin film transistor array panel, and a manufacturing method thereof. A thin film transistor according to an exemplary embodiments of the present invention includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a channel region overlapping the gate electrode, the gate insulating layer interposed between the channel region and the gate electrode; and a source region and a drain region, facing each other with respect to the channel region, positioned in the same layer as the channel region, and connected to the channel region, wherein the channel region, the source region, and the drain region include an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than a carrier concentration of the channel region.

Abstract: There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays and liquid crystal displays.

Abstract: A display substrate includes a substrate, a switching element, a pixel electrode, and a light sensing part. The switching element is disposed on the substrate and is electrically connected to a gate line and a data line. The pixel electrode is electrically connected to the switching element. The light sensing part is electrically connected to the switching element and the pixel electrode, and is configured to control a grayscale of a pixel according to a brightness of an external light. The pixel includes the pixel electrode.

Abstract: A method and user terminal for dynamically controlling routing are provided. The method may provide an effective routing mechanism in a system to which a plurality of radio access technologies (RATs) are applied. The method may perform routing based on characteristics of the RATs, a degree of a generated traffic load, a user preference of a RAT, and the like.

Abstract: A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer.

Abstract: A thin film transistor display panel a includes a transparent substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; a semiconductor layer positioned on the gate insulating layer and including a channel region; a source electrode and a drain electrode positioned on the semiconductor layer and facing each other; and a passivation layer configured to cover the source electrode, the drain electrode, and the semiconductor layer, wherein the semiconductor layer includes a relatively thick first portion between the source electrode and the gate electrode and a relatively thinner second portion between the drain electrode and the gate electrode overlap, the relatively thick first portion being sufficiently thick to substantially reduce a charge trapping phenomenon that may otherwise occur at a gate electrode to gate dielectric interface if the first portion were as thin as the second portion.