Abstract: A method comprises the step of providing a read-write element on a wafer including at least one magnetoresistive stripe, providing a shared pole layer above the magnetoresistive stripe, and planarizing the shared pole layer. Thereafter, a top pole layer is formed above the shared pole layer. Together, the shared and top pole layers form the write element. Because the shared pole layer is planarized, the gap portion of the write element between the shared and top pole layers is flat. Because of this, improved recording density can be achieved.

Abstract: A method for forming a magnetically biased magnetoresistive (MR) layer. There is first provided a substrate. There is then formed over the substrate a ferromagnetic magnetoresistive (MR) material layer. There is then forming contacting the ferromagnetic magnetoresistive (MR) material layer a magnetic material layer formed of a first crystalline phase, where the magnetic material layer is formed of a crystalline multiphasic magnetic material having the first crystalline phase which does not appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer and a second crystalline phase which does appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer.

Abstract: A method for forming a longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises forming a first patterned magnetoresistive (MR) layer. Contact the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. Then anneal the device in the presence of a longitudinal external magnetic field. Next, form a second patterned magnetoresistive (MR) layer above the previous structure. Contact the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer.

Abstract: A method for forming a plated layer. There is first provided a substrate. There is then formed over the substrate a masking frame employed for masking frame plating a masking frame plated layer within the masking frame, where the masking frame is fabricated to provide an overhang of an upper portion of the masking frame spaced further from the substrate with respect to a lower portion of the masking frame spaced closer to the substrate. Finally, there is then plated the masking frame plated layer within the masking frame. The method is useful for forming masking frame plated magnetic pole tip stack layers with enhanced planarity dimensional control within magnetic transducer elements.

Abstract: A method for forming a plated layer. There is first provided a substrate. There is then formed over the substrate a masking frame employed for masking frame plating a masking frame plated layer within the masking frame, where the masking frame is fabricated to provide an overhang of an upper portion of the masking frame spaced further from the substrate with respect to a lower portion of the masking frame spaced closer to the substrate. Finally, there is then plated the masking frame plated layer within the masking frame. The method is useful for forming masking frame plated magnetic pole tip stack layers with enhanced planarity dimensional control within magnetic transducer elements.

Abstract: A method for forming a giant magnetoresistive (GMR) sensor element, and a giant magnetoresistive (GMR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a free ferromagnetic layer separated from a pinned ferromagnetic layer in turn formed thereover by a non-magnetic conductor spacer layer, where the pinned ferromagnetic layer in turn has a pinning material layer formed thereover. The method contemplates a giant magnetoresistive (GMR) sensor element formed in accord with the method.

Abstract: A method for forming a magnetoresistive (MR) sensor element, and a magnetoresistive sensor element fabricated in accord with the method. There is first provided a substrate. There is then formed over the substrate a magnetoresistive (MR) layer comprising: (1) a bulk layer of the magnetoresistive (MR) layer formed of a first magnetoresistive (MR) material optimized to provide an enhanced magnetoresistive (MR) resistivity sensitivity of the magnetoresistive (MR) layer; and (2) a surface layer of the magnetoresistive (MR) layer formed of a second magnetoresistive (MR) material optimized to provide an enhanced magnetic exchange bias when forming a magnetic exchange bias layer upon the surface layer of the magnetoresistive (MR) layer. Finally, there is then formed upon the surface layer of the magnetoresistive (MR) layer the magnetic exchange bias layer. The method contemplates an magnetoresistive (MR) sensor element fabricated in accord with the method.

Abstract: A method to form a passivation layer using an electrochemical process over a MR Sensor so that the passivation layer defines the MR track width. The passivation layer is formed by anodizing the MR sensor. The passivation layer is an electrical insulator (preventing Sensor current (I) from shunting through the overspray) and a heat conductor to allow MR heat to dissipate away from the MR sensor through the overspray. The method comprises: forming a passivation layer on the MR sensor; the passivation layer formed using an electrochemical process. Then we spinning-on and printing a lift-off photoresist structure over the passivation layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure thereby defining a track width of the MR sensor. Then we deposit a lead layer over the passivation layer and MR sensor. The lift-off structure is removed where by the passivation layer defines a track width.

Abstract: A method to form a passivation layer over a MR Sensor so that the passivation layer defines the track width. The passivation layer is formed simultaneously with the development of the lift off structure in a novel developing/oxidizing solution that oxidizes the MR sensor and develops the photoresist. The passivation layer is an electrical insulator that prevents sensor current from shunting through the overspray of the leads and a heat conductor to allow MR heat to dissipate through the overspray. The method comprises: spinning-on and printing a lift-off photoresist structure over the MR sensor. Next, the lift-off photoresist structure is developed. The MR sensor is anodized in a developing/oxidizing solution to: (1) remove portions of the lower photoresist and (2) to form a (e.g., thin NiFeO) passivation layer on the MR layer at least partially under the upper photoresist layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure.

Abstract: The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including development, proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.

Abstract: The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including development, proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.

Abstract: The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including development, proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.

Abstract: A magnetic head/slider construction and a magnetic data recording disk, as well as a method for fabricating the magnetic head/slider construction and the magnetic data storage disk. To practice the method, there is formed over the air bearing surface of each of a magnetic head/slider construction and a magnetic data storage disk a wear resistant carbon layer. Over each of the wear resistant carbon layers is then formed a lubricating carbon layer. The lubricating carbon layers may be formed in-situ upon the wear resistant carbon layers. The wear resistant carbon layers may be formed from nitrogenated wear resistant carbon materials having a nitrogen content of from about 15 to about 30 atomic percent and hydrogenated wear resistant carbon materials having a hydrogen content of from about 15 to about 25 atomic percent. The lubricating carbon layer is preferably formed from a hydrogenated lubricating carbon material having a hydrogen content of from about 30 to about 40 atomic percent.

Abstract: A method of manufacturing a magnetic transducer structure using a special pole etch using an IBE preferably with Kr or Xe, and a write gap material with a high IBE etch rate such as Ta, NiCu alloys, Pd, Pd—Cu alloys. A first layer of pole material and a write gap insulating layer are formed over the substrate. The write gap layer is composed of a material having a high ion beam etch rate compared to the first and second layers of pole material. The write gap insulating layer is preferably composed of Ni—Cu alloy, Pd, Pd—Cu alloys. Next, a second layer of pole material is formed on the first insulating layer. In a key step, we ion beam etch (IBE) the second pole; the write gap insulating layer and the first layer; the second pole serving as an etch mask during the ion beam etching to form a head. In a second preferred embodiment of the invention, the ion beam etching performed using a gas of Kr or Xe.

Abstract: A non-magnetic conductor material, a magnetic transducer element having formed therein a non-magnetic conductor layer formed of the non-magnetic conductor material and a method for forming a magnetic transducer element having formed therein the non-magnetic conductor layer formed of the non-magnetic conductor material. The non-magnetic conductor material comprises an alloy comprising nickel and at least one non-magnetic conductor metal selected from the group consisting of copper at a weight percent of from about 45 to about 90, zinc at a weight percent of from about 20 to about 75, cadmium at a weight percent of from about 35 to about 85, platinum at a weight percent of from about 55 to about 90 and palladium at a weight percent of from about 75 to about 95. The non-magnetic conductor material contemplates the magnetic transducer element and the method for forming the magnetic transducer element.

Abstract: A method for forming a magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a seed layer. There is then formed contacting a pair of opposite ends of the seed layer a pair of patterned conductor lead layer structures. There is then etched, while employing an ion etch method, the seed layer and the pair of patterned conductor lead layer structures to form an ion etched seed layer and a pair of ion etched patterned conductor lead layer structures. Finally, there is then formed upon the ion etched seed layer and the pair of ion etched patterned conductor lead layers structures a magnetoresistive (MR) layered structure. Within the magnetoresistive (MR) sensor element, the pair of patterned conductor lead layer structures may be formed within a pair of recesses within an ion etch recessed dielectric isolation layer.

Abstract: A method for forming a magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a seed layer. There is then formed contacting a pair of opposite ends of the seed layer a pair of patterned conductor lead layer structures. There is then etched, while employing an ion etch method, the seed layer and the pair of patterned conductor lead layer structures to form an ion etched seed layer and a pair of ion etched patterned conductor lead layer structures. Finally, there is then formed upon the ion etched seed layer and the pair of ion etched patterned conductor lead layers structures a magnetoresistive (MR) layered structure. Withip the magnetoresistive (MR) sensor element, the pair of patterned conductor lead layer structures may be formed within a pair of recesses within an ion etch recessed dielectric isolation layer.

Abstract: It has been observed that plated structures grown inside molds for small objects, such as a gap structure in a magnetic read head, often have curved rather than planar surfaces. This problem has been overcome as follows. Prior to laying down photoresist for the mold, a layer of copper is deposited on the substrate on which the head structure is to be grown (normally the shared pole). After the photoresist is patterned to form the mold, all exposed copper is selectively removed from the substrate a key feature being that the copper is over-etched so that some undercutting of the photoresist occurs. Then, when the layers making up the gap structure are electrodeposited inside the mold they grow away from the substrate as planar surfaces.

Abstract: The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including development, proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.

Abstract: A method for forming a longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises forming a first patterned magnetoresistive (MR) layer. Contact the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. Then anneal the device in the presence of a longitudinal external magnetic field. Next, form a second patterned magnetoresistive (MR) layer above the previous structure. Contact the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer.